Chang Seo Park

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Singapore, SG

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a CMOS device with dual metal gate electrodes
- Patent number 7,316,950
- Issue date Jan 8, 2008
- National University of Singapore
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of fabricating a CMOS device with dual metal gate electrodes
- Publication number 20040245578
- Publication date Dec 9, 2004
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS