Chang Seo PARK

Person

Irvine, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
IC product comprising an insulating gate separation structure posit...
- Patent number 11,522,068
- Issue date Dec 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for a gate cut
- Patent number 10,832,966
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures on transistor devices
- Patent number 10,453,936
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field-effect transistor on bulk silicon substrate
- Patent number 9,391,170
- Issue date Jul 12, 2016
- Broadcom Corporation
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a dielectric cap layer on a metal gate structure
- Patent number 8,728,908
- Issue date May 20, 2014
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate semiconductor device formation using low res...
- Patent number 8,722,491
- Issue date May 13, 2014
- GLOBALFOUNDRIES Inc.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET formation using double patterning memorization
- Patent number 8,716,094
- Issue date May 6, 2014
- Global Foundries Inc.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits
- Patent number 8,541,286
- Issue date Sep 24, 2013
- GLOBALFOUNDRIES, INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for using material substitution processes to form replac...
- Patent number 8,536,040
- Issue date Sep 17, 2013
- GLOBALFOUNDRIES Inc.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication using gate substitution
- Patent number 8,431,472
- Issue date Apr 30, 2013
- GLOBALFOUNDRIES, INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IC PRODUCT COMPRISING AN INSULATING GATE SEPARATION STRUCTURE POSIT...
- Publication number 20190355832
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR A GATE CUT
- Publication number 20190259668
- Publication date Aug 22, 2019
- GLOBALFOUNDRIES INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20190131429
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Field-Effect Transistor on Bulk Silicon Substrate
- Publication number 20150054079
- Publication date Feb 26, 2015
- BROADCOM CORPORATION
- Chang Seo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FORMATION USING DOUBLE PATTERNING MEMORIZATION
- Publication number 20140141605
- Publication date May 22, 2014
- GLOBALFOUNDRIES INC.
- Chang Seo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC CAP LAYER FOR REPLACEMENT GATE WITH SELF-ALIGNED CONTACT
- Publication number 20140134836
- Publication date May 15, 2014
- GLOBALFOUNDRIES, Inc.
- BALASUBRAMANIAN PRANATHARTHIHARAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE SEMICONDUCTOR DEVICE FORMATION USING LOW RES...
- Publication number 20140065811
- Publication date Mar 6, 2014
- GLOBALFOUNDRIES INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR USING MATERIAL SUBSTITUTION PROCESSES TO FORM REPLAC...
- Publication number 20130260548
- Publication date Oct 3, 2013
- GLOBALFOUNDRIES INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS
- Publication number 20130217204
- Publication date Aug 22, 2013
- GLOBALFOUNDRIES INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming a Replacement Gate Comprised of Silicon and a De...
- Publication number 20130043592
- Publication date Feb 21, 2013
- GLOBALFOUNDRIES INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming a Dielectric Cap Layer on a Metal Gate Structure
- Publication number 20130040450
- Publication date Feb 14, 2013
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION USING GATE SUBSTITUTION
- Publication number 20130005131
- Publication date Jan 3, 2013
- GLOBALFOUNDRIES INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS

Chang Seo PARK

Person

Patents Grantslast 30 patents

IC product comprising an insulating gate separation structure posit...

Methods and structures for a gate cut

Methods of forming replacement gate structures on transistor devices

Three-dimensional field-effect transistor on bulk silicon substrate

Methods of forming a dielectric cap layer on a metal gate structure

Replacement metal gate semiconductor device formation using low res...

FinFET formation using double patterning memorization

Methods for fabricating integrated circuits

Techniques for using material substitution processes to form replac...

Semiconductor device fabrication using gate substitution

Patents Applicationslast 30 patents

IC PRODUCT COMPRISING AN INSULATING GATE SEPARATION STRUCTURE POSIT...

METHODS AND STRUCTURES FOR A GATE CUT

METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES

Three-Dimensional Field-Effect Transistor on Bulk Silicon Substrate

FINFET FORMATION USING DOUBLE PATTERNING MEMORIZATION

DIELECTRIC CAP LAYER FOR REPLACEMENT GATE WITH SELF-ALIGNED CONTACT

REPLACEMENT METAL GATE SEMICONDUCTOR DEVICE FORMATION USING LOW RES...

TECHNIQUES FOR USING MATERIAL SUBSTITUTION PROCESSES TO FORM REPLAC...

METHODS FOR FABRICATING INTEGRATED CIRCUITS

Methods of Forming a Replacement Gate Comprised of Silicon and a De...

Methods of Forming a Dielectric Cap Layer on a Metal Gate Structure

SEMICONDUCTOR DEVICE FABRICATION USING GATE SUBSTITUTION