Chang-Tsung Pai

Person

Taichung City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,087,619
- Issue date Sep 10, 2024
- Winbond Electronics Corp.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory apparatus and operating method thereof and memory...
- Patent number 11,908,516
- Issue date Feb 20, 2024
- Winbond Electronics Corp.
- Ming-Che Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 11,758,740
- Issue date Sep 12, 2023
- Winbond Electronics Corp.
- Chang-Tsung Pai
Information Patent Grant
Resistive random access memories and method for fabricating the same
- Patent number 11,653,583
- Issue date May 16, 2023
- Winbond Electronics Corp.
- Chang-Tsung Pai
Information Patent Grant
Resetting method of resistive random access memory
- Patent number 11,538,525
- Issue date Dec 27, 2022
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory and resetting method thereof
- Patent number 11,176,996
- Issue date Nov 16, 2021
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory
- Patent number 11,152,566
- Issue date Oct 19, 2021
- Winbond Electronics Corp.
- Po-Yen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data write-in method and non-volatile memory
- Patent number 11,011,231
- Issue date May 18, 2021
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory
- Patent number 10,811,603
- Issue date Oct 20, 2020
- Winbond Electronics Corp.
- Bo-Lun Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY APPARATUS AND OPERATING METHOD THEREOF AND MEMORY...
- Publication number 20240233819
- Publication date Jul 11, 2024
- WINBOND ELECTRONICS CORP.
- Ming-Che Lin
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY APPARATUS AND OPERATING METHOD THEREOF AND MEMORY...
- Publication number 20240135990
- Publication date Apr 25, 2024
- WINBOND ELECTRONICS CORP.
- Ming-Che Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230129196
- Publication date Apr 27, 2023
- WINBOND ELECTRONICS CORP.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY APPARATUS AND OPERATING METHOD THEREOF AND MEMORY...
- Publication number 20220068382
- Publication date Mar 3, 2022
- WINBOND ELECTRONICS CORP.
- Ming-Che Lin
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE AND RELIABILITY ENHANCEMENT METHOD THEREOF
- Publication number 20220069209
- Publication date Mar 3, 2022
- WINBOND ELECTRONICS CORP.
- Ping-Kun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20220028454
- Publication date Jan 27, 2022
- WINBOND ELECTRONICS CORP.
- Ping-Kun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20210366986
- Publication date Nov 25, 2021
- WINBOND ELECTRONICS CORP.
- Chang-Tsung Pai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20210287934
- Publication date Sep 16, 2021
- WINBOND ELECTRONICS CORP.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20210175418
- Publication date Jun 10, 2021
- WINBOND ELECTRONICS CORP.
- Po-Yen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA WRITE-IN METHOD AND NON-VOLATILE MEMORY
- Publication number 20210074356
- Publication date Mar 11, 2021
- WINBOND ELECTRONICS CORP.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND RESETTING METHOD THEREOF
- Publication number 20210012839
- Publication date Jan 14, 2021
- WINBOND ELECTRONICS CORP.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORIES AND METHOD FOR FABRICATING THE SAME
- Publication number 20210013408
- Publication date Jan 14, 2021
- WINBOND ELECTRONICS CORP.
- Chang-Tsung PAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20200266344
- Publication date Aug 20, 2020
- WINBOND ELECTRONICS CORP.
- Bo-Lun Wu
- G11 - INFORMATION STORAGE

Chang-Tsung Pai

Person

Patents Grantslast 30 patents

Semiconductor device and method of fabricating the same

Resistive memory apparatus and operating method thereof and memory...

Three-dimensional semiconductor device and method of fabricating th...

Resistive random access memories and method for fabricating the same

Resetting method of resistive random access memory

Resistive random access memory and resetting method thereof

Resistive random access memory

Data write-in method and non-volatile memory

Resistive random access memory

Patents Applicationslast 30 patents

RESISTIVE MEMORY APPARATUS AND OPERATING METHOD THEREOF AND MEMORY...

RESISTIVE MEMORY APPARATUS AND OPERATING METHOD THEREOF AND MEMORY...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

RESISTIVE MEMORY APPARATUS AND OPERATING METHOD THEREOF AND MEMORY...

RESISTIVE MEMORY DEVICE AND RELIABILITY ENHANCEMENT METHOD THEREOF

RESETTING METHOD OF RESISTIVE RANDOM ACCESS MEMORY

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

RESISTIVE RANDOM ACCESS MEMORY

DATA WRITE-IN METHOD AND NON-VOLATILE MEMORY

RESISTIVE RANDOM ACCESS MEMORY AND RESETTING METHOD THEREOF

RESISTIVE RANDOM ACCESS MEMORIES AND METHOD FOR FABRICATING THE SAME

RESISTIVE RANDOM ACCESS MEMORY