Chang Y. Chang

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
SRAM structure and method for forming the same
- Patent number 12,156,394
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
Information Patent Grant
Profile control of a gap fill structure
- Patent number 12,057,349
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for fringing capacitance control
- Patent number 12,020,989
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Keng-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for fringing capacitance control
- Patent number 12,009,266
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Keng-Yao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer between substrate and isolation structure
- Patent number 11,948,842
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having cut gate dielectric
- Patent number 11,901,237
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local gate height tuning by cmp and dummy gate design
- Patent number 11,817,354
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for providing line end extensions for fin-type...
- Patent number 11,721,761
- Issue date Aug 8, 2023
- Mosaid Technologies Incorporated
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate process for reducing transistor spacing
- Patent number 11,721,544
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure having different distances to adjacent FinFET d...
- Patent number 11,699,758
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure cutting process
- Patent number 11,694,931
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation of semiconductor devices
- Patent number 11,574,846
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local gate height tuning by CMP and dummy gate design
- Patent number 11,508,623
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display apparatus and data driving integrated circuit thereof
- Patent number 11,443,667
- Issue date Sep 13, 2022
- Novatek Microelectronics Corp.
- Chang-Pao Chang
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Method for forming semiconductor device
- Patent number 11,437,278
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a transistor gate by non-directional impl...
- Patent number 11,398,384
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM structure and method for forming the same
- Patent number 11,315,933
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for providing line end extensions for fin-type...
- Patent number 11,239,365
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate process for reducing transistor spacing
- Patent number 11,239,072
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Profile control of a gap fill structure
- Patent number 11,177,180
- Issue date Nov 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structure of fin field effect transistor
- Patent number 11,158,725
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure having different distances to adjacent FinFET d...
- Patent number 11,031,501
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer between substrate and isolation structure
- Patent number 10,991,628
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer between substrate and isolation structure
- Patent number 10,978,351
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure cutting process
- Patent number 10,930,564
- Issue date Feb 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creating devices with multiple threshold voltages by cut-metal-gate...
- Patent number 10,868,003
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal gate and formation method thereof
- Patent number 10,741,450
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut metal gate process for reducing transistor spacing
- Patent number 10,651,030
- Issue date May 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for providing line end extensions for fin-type...
- Patent number 10,573,751
- Issue date Feb 25, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure having different distances to adjacent FinFET d...
- Patent number 10,510,894
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SRAM STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240397690
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- MING-CHANG WEN
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL OF A GAP FILL STRUCTURE
- Publication number 20240363423
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR FRINGING CAPACITANCE CONTROL
- Publication number 20240304497
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Keng-Yao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC
- Publication number 20240213097
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Gate Height Tuning by CMP and Dummy Gate Design
- Publication number 20230386927
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING
- Publication number 20230377873
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STRUCTURE CUTTING PROCESS
- Publication number 20230352345
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...
- Publication number 20230299203
- Publication date Sep 21, 2023
- MOSAID TECHNOLOGIES INCORPORATED
- Shao-Ming YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Formation Of Semiconductor Devices
- Publication number 20230187288
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Gate Height Tuning by Cmp And Dummy Gate Design
- Publication number 20220384262
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR FRINGING CAPACITANCE CONTROL
- Publication number 20220367287
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Keng-Yao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC
- Publication number 20220359302
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220351975
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20220254789
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- MING-CHANG WEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...
- Publication number 20220223727
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING
- Publication number 20220157595
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL OF A GAP FILL STRUCTURE
- Publication number 20220077001
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structure Having Different Distances to Adjacent FinFET D...
- Publication number 20210296484
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210249271
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL OF A GAP FILL STRUCTURE
- Publication number 20210249309
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Stop Layer Between Substrate and Isolation Structure
- Publication number 20210242090
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Gate Height Tuning by Cmp And Dummy Gate Design
- Publication number 20210202320
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR FRINGING CAPACITANCE CONTROL
- Publication number 20210193530
- Publication date Jun 24, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Keng-Yao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Formation Of Semiconductor Devices
- Publication number 20210183713
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Structure Cutting Process
- Publication number 20210175126
- Publication date Jun 10, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20200365465
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chang-Yun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Process for Reducing Transistor Spacing
- Publication number 20200251325
- Publication date Aug 6, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Chang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...
- Publication number 20200212217
- Publication date Jul 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Structure Having Different Distances to Adjacent FinFET D...
- Publication number 20200119183
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chang-Yun Chang
- H01 - BASIC ELECTRIC ELEMENTS

Chang Y. Chang

Person

Patents Grantslast 30 patents

SRAM structure and method for forming the same

Profile control of a gap fill structure

Structure for fringing capacitance control

Structure for fringing capacitance control

Etch stop layer between substrate and isolation structure

Semiconductor device having cut gate dielectric

Local gate height tuning by cmp and dummy gate design

Structure and method for providing line end extensions for fin-type...

Cut metal gate process for reducing transistor spacing

Isolation structure having different distances to adjacent FinFET d...

Metal gate structure cutting process

Gate formation of semiconductor devices

Local gate height tuning by CMP and dummy gate design

Display apparatus and data driving integrated circuit thereof

Method for forming semiconductor device

Methods for manufacturing a transistor gate by non-directional impl...

SRAM structure and method for forming the same

Structure and method for providing line end extensions for fin-type...

Cut metal gate process for reducing transistor spacing

Profile control of a gap fill structure

Fin structure of fin field effect transistor

Isolation structure having different distances to adjacent FinFET d...

Etch stop layer between substrate and isolation structure

Etch stop layer between substrate and isolation structure

Metal gate structure cutting process

Creating devices with multiple threshold voltages by cut-metal-gate...

Semiconductor device having a metal gate and formation method thereof

Cut metal gate process for reducing transistor spacing

Structure and method for providing line end extensions for fin-type...

Isolation structure having different distances to adjacent FinFET d...

Patents Applicationslast 30 patents

SRAM STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICES

PROFILE CONTROL OF A GAP FILL STRUCTURE

STRUCTURE FOR FRINGING CAPACITANCE CONTROL

SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

Local Gate Height Tuning by CMP and Dummy Gate Design

CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING

METAL GATE STRUCTURE CUTTING PROCESS

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...

Gate Formation Of Semiconductor Devices

Local Gate Height Tuning by Cmp And Dummy Gate Design

STRUCTURE FOR FRINGING CAPACITANCE CONTROL

SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC

Semiconductor Device and Method

SRAM STRUCTURE AND METHOD FOR FORMING THE SAME

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...

CUT METAL GATE PROCESS FOR REDUCING TRANSISTOR SPACING

PROFILE CONTROL OF A GAP FILL STRUCTURE

Isolation Structure Having Different Distances to Adjacent FinFET D...

Semiconductor Device and Method

PROFILE CONTROL OF A GAP FILL STRUCTURE

Etch Stop Layer Between Substrate and Isolation Structure

Local Gate Height Tuning by Cmp And Dummy Gate Design

STRUCTURE FOR FRINGING CAPACITANCE CONTROL

Gate Formation Of Semiconductor Devices

Metal Gate Structure Cutting Process

METHOD FOR FORMING SEMICONDUCTOR DEVICE

Cut Metal Gate Process for Reducing Transistor Spacing

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE...

Isolation Structure Having Different Distances to Adjacent FinFET D...