Chang Yu

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bilayer barrier metal method for obtaining 100% step-coverage in co...
- Patent number 5,380,678
- Issue date Jan 10, 1995
- Chang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for simultaneously forming silicide and effecting dopant act...
- Patent number 5,236,865
- Issue date Aug 17, 1993
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a capacitor in semiconductor wafer processing
- Patent number 5,202,278
- Issue date Apr 13, 1993
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser ablation deposition process for semiconductor manufacture
- Patent number 5,173,441
- Issue date Dec 22, 1992
- Micron Technology, Inc.
- Chang Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor metallization method
- Patent number 5,147,819
- Issue date Sep 15, 1992
- Micron Technology, Inc.
- Chang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for planarizing insulating dielectric material
- Patent number 5,139,967
- Issue date Aug 18, 1992
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing process for decreasing the optical refe...
- Patent number 5,139,974
- Issue date Aug 18, 1992
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive contact plug and a method of forming a conductive contac...
- Patent number 5,124,780
- Issue date Jun 23, 1992
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for widening the laser planarization process window for meta...
- Patent number 5,106,779
- Issue date Apr 21, 1992
- Micron Technology, Inc.
- Chang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress reduction in metal films by laser annealing
- Patent number 5,094,977
- Issue date Mar 10, 1992
- Micron Technology, Inc.
- Chang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving step coverage of a metallization layer on an i...
- Patent number 5,066,611
- Issue date Nov 19, 1991
- Micron Technology, Inc.
- Chang Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving step coverage of a metallization layer on an i...
- Patent number 5,032,233
- Issue date Jul 16, 1991
- Micron Technology, Inc.
- Chang Yu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Bilayer barrier metal method for obtaining 100% step-coverage in co...

Method for simultaneously forming silicide and effecting dopant act...

Method of forming a capacitor in semiconductor wafer processing

Laser ablation deposition process for semiconductor manufacture

Semiconductor metallization method

Process for planarizing insulating dielectric material

Semiconductor manufacturing process for decreasing the optical refe...

Conductive contact plug and a method of forming a conductive contac...

Method for widening the laser planarization process window for meta...

Stress reduction in metal films by laser annealing

Method for improving step coverage of a metallization layer on an i...

Method for improving step coverage of a metallization layer on an i...