Changfeng WANG

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method for improving size of contact holes of FDSOI device
- Patent number 11,271,012
- Issue date Mar 8, 2022
- Shanghai Huali Integrated Circuit Corporation
- Tonghui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator structure having bipolar stress, and manufactu...
- Patent number 10,497,718
- Issue date Dec 3, 2019
- Yanfei Ma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR IMPROVING SIZE OF CONTACT HOLES OF FDSOI DEVICE
- Publication number 20220068971
- Publication date Mar 3, 2022
- Shanghai Huali Integrated Circuit Corporation
- Tonghui WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME
- Publication number 20190378910
- Publication date Dec 12, 2019
- Shanghai Huali Integrated Circuit Mfg. Co., Ltd.
- Yang SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR STRUCTURE HAVING BIPOLAR STRESS, AND MANUFACTU...
- Publication number 20190304998
- Publication date Oct 3, 2019
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Yanfei MA
- H01 - BASIC ELECTRIC ELEMENTS