Changhwan Choi

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fabrication of low threshold voltage and inversion oxide thickness...
- Patent number 9,105,745
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to obtain EOT scaled dielectric stacks
- Patent number 9,059,314
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Hemanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor device having a metal gate stack with an ox...
- Patent number 8,415,677
- Issue date Apr 9, 2013
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scavanging metal stack for a high-k gate dielectric
- Patent number 8,367,496
- Issue date Feb 5, 2013
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to obtain EOT scaled dielectric stacks
- Patent number 8,304,836
- Issue date Nov 6, 2012
- International Business Machines Corporation
- Hemanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fabricating a high-performance band-edge c...
- Patent number 8,097,500
- Issue date Jan 17, 2012
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scavenging metal stack for a high-k gate dielectric
- Patent number 7,989,902
- Issue date Aug 2, 2011
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low Threshold Voltage and Inversion Oxide Thickness Scaling for a H...
- Publication number 20150243662
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Threshold Voltage And Inversion Oxide thickness Scaling For A H...
- Publication number 20130034940
- Publication date Feb 7, 2013
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Threshold Voltage And Inversion Oxide Thickness Scaling For A H...
- Publication number 20130032886
- Publication date Feb 7, 2013
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO OBTAIN EOT SCALED DIELECTRIC STACKS
- Publication number 20130005156
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Hemanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC
- Publication number 20110207280
- Publication date Aug 25, 2011
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR DEVICE HAVING A METAL GATE STACK WITH AN OX...
- Publication number 20110175147
- Publication date Jul 21, 2011
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO OBTAIN EOT SCALED DIELECTRIC STACKS
- Publication number 20110115027
- Publication date May 19, 2011
- International Business Machines Corporation
- Hemanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC
- Publication number 20100320547
- Publication date Dec 23, 2010
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR NITRIDATION OF SHALLOW TRENCH ISOLATION STRUCTURE TO PRE...
- Publication number 20100193896
- Publication date Aug 5, 2010
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR FABRICATING A HIGH-PERFORMANCE BAND-EDGE C...
- Publication number 20090181505
- Publication date Jul 16, 2009
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE HIGH-K DIELECTRIC GATE STACK
- Publication number 20090108294
- Publication date Apr 30, 2009
- International Business Machines Corporation
- Changhwan Choi
- H01 - BASIC ELECTRIC ELEMENTS

Changhwan Choi

Person

Patents Grantslast 30 patents

Fabrication of low threshold voltage and inversion oxide thickness...

Structure and method to obtain EOT scaled dielectric stacks

Field-effect transistor device having a metal gate stack with an ox...

Scavanging metal stack for a high-k gate dielectric

Structure and method to obtain EOT scaled dielectric stacks

Method and apparatus for fabricating a high-performance band-edge c...

Scavenging metal stack for a high-k gate dielectric

Patents Applicationslast 30 patents

Low Threshold Voltage and Inversion Oxide Thickness Scaling for a H...

Low Threshold Voltage And Inversion Oxide thickness Scaling For A H...

Low Threshold Voltage And Inversion Oxide Thickness Scaling For A H...

STRUCTURE AND METHOD TO OBTAIN EOT SCALED DIELECTRIC STACKS

SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC

FIELD-EFFECT TRANSISTOR DEVICE HAVING A METAL GATE STACK WITH AN OX...

STRUCTURE AND METHOD TO OBTAIN EOT SCALED DIELECTRIC STACKS

SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC

METHOD FOR NITRIDATION OF SHALLOW TRENCH ISOLATION STRUCTURE TO PRE...

METHOD AND APPARATUS FOR FABRICATING A HIGH-PERFORMANCE BAND-EDGE C...

SCALABLE HIGH-K DIELECTRIC GATE STACK