Changwoo Oh

Person

Suwon-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors including fin structures with different do...
- Patent number 9,653,551
- Issue date May 16, 2017
- Samsung Electronics Co., Ltd.
- Changwoo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor formed using resistance patterns and semiconductor devices...
- Patent number 9,520,458
- Issue date Dec 13, 2016
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors including multiple lattice constants a...
- Patent number 9,252,274
- Issue date Feb 2, 2016
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated junction and junctionless nanotransistors
- Patent number 9,171,845
- Issue date Oct 27, 2015
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of fabricating the same
- Patent number 9,123,774
- Issue date Sep 1, 2015
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of fabricating the same
- Patent number 9,087,723
- Issue date Jul 21, 2015
- Samsung Electronics Co., Ltd.
- Choong-Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated junction and junctionless nanotransistors
- Patent number 9,048,120
- Issue date Jun 2, 2015
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors including multiple lattice constants a...
- Patent number 8,941,155
- Issue date Jan 27, 2015
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating devices including source/drain region with a...
- Patent number 8,679,910
- Issue date Mar 25, 2014
- Samsung Electronics Co., Ltd.
- Li Ming
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
- Publication number 20180331201
- Publication date Nov 15, 2018
- Samsung Electronics Co., Ltd.
- Choong-Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS INCLUDING FIN STRUCTURES WITH DIFFERENT DO...
- Publication number 20160181366
- Publication date Jun 23, 2016
- Samsung Electronics Co., Ltd.
- CHANGWOO OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistor Formed Using Resistance Patterns and Semiconductor Devices...
- Publication number 20160087026
- Publication date Mar 24, 2016
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
- Publication number 20150279960
- Publication date Oct 1, 2015
- Choong-Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED JUNCTION AND JUNCTIONLESS NANOTRANSISTORS
- Publication number 20150243664
- Publication date Aug 27, 2015
- Sung-Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS A...
- Publication number 20150108545
- Publication date Apr 23, 2015
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20140203348
- Publication date Jul 24, 2014
- Samsung Electronics Co., Ltd.
- Sung-Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED JUNCTION AND JUNCTIONLESS NANOTRANSISTORS
- Publication number 20140145273
- Publication date May 29, 2014
- Sung-Dae Suk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS INCLUDING FIN STRUCTURES WITH DIFFERENT DO...
- Publication number 20130249003
- Publication date Sep 26, 2013
- Changwoo Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS A...
- Publication number 20130234204
- Publication date Sep 12, 2013
- SAMSUNG ELECTRONICS CO., LTD.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
- Publication number 20130221447
- Publication date Aug 29, 2013
- Choong-Ho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Devices Including Source/Drain Region with A...
- Publication number 20120088342
- Publication date Apr 12, 2012
- SAMSUNG ELECTRONICS CO., LTD.
- Li Ming
- H01 - BASIC ELECTRIC ELEMENTS

Changwoo Oh

Person

Patents Grantslast 30 patents

Field effect transistors including fin structures with different do...

Resistor formed using resistance patterns and semiconductor devices...

Fin field effect transistors including multiple lattice constants a...

Integrated junction and junctionless nanotransistors

Semiconductor devices and methods of fabricating the same

Field effect transistor and method of fabricating the same

Integrated junction and junctionless nanotransistors

Fin field effect transistors including multiple lattice constants a...

Methods of fabricating devices including source/drain region with a...

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

FIELD EFFECT TRANSISTORS INCLUDING FIN STRUCTURES WITH DIFFERENT DO...

Resistor Formed Using Resistance Patterns and Semiconductor Devices...

FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

INTEGRATED JUNCTION AND JUNCTIONLESS NANOTRANSISTORS

FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS A...

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

INTEGRATED JUNCTION AND JUNCTIONLESS NANOTRANSISTORS

FIELD EFFECT TRANSISTORS INCLUDING FIN STRUCTURES WITH DIFFERENT DO...

FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS A...

FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

Methods of Fabricating Devices Including Source/Drain Region with A...