Changyuan Chen

Person

San Ramon, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Programming to minimize cross-temperature threshold voltage widening
- Patent number 10,978,145
- Issue date Apr 13, 2021
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
Post write erase conditioning
- Patent number 10,818,366
- Issue date Oct 27, 2020
- Western Digital Technologies, Inc.
- Mohan Vamsi Dunga
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with reduced neighbor word line interference using ad...
- Patent number 10,636,501
- Issue date Apr 28, 2020
- SanDisk Technologies LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional NAND memory device with drain select gate electro...
- Patent number 10,566,059
- Issue date Feb 18, 2020
- SanDisk Technologies LLC
- Vinh Diep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post write erase conditioning
- Patent number 10,553,294
- Issue date Feb 4, 2020
- Western Digital Technologies, Inc.
- Mohan Vamsi Dunga
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for string-based erase verify to create partial g...
- Patent number 10,535,411
- Issue date Jan 14, 2020
- Western Digital Technologies, Inc.
- Mohan Dunga
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory write verification using temperature compensation
- Patent number 10,304,559
- Issue date May 28, 2019
- Western Digital Technologies, Inc.
- Himanshu Hemant Naik
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Erase speed based word line control
- Patent number 10,304,551
- Issue date May 28, 2019
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
Post write erase conditioning
- Patent number 10,269,439
- Issue date Apr 23, 2019
- Western Digital Technologies, Inc.
- Mohan Vamsi Dunga
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with methods to reduce creep-up field between d...
- Patent number 10,204,689
- Issue date Feb 12, 2019
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase for partially programmed blocks in non-volatile memory
- Patent number 10,074,440
- Issue date Sep 11, 2018
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
Cell current based bit line voltage
- Patent number 10,008,273
- Issue date Jun 26, 2018
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for programming a memory device with multiple wri...
- Patent number 9,972,396
- Issue date May 15, 2018
- Western Digital Technologies, Inc.
- Himanshu Naik
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming a continuous-channel flash memory device
- Patent number 9,892,790
- Issue date Feb 13, 2018
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
System solution for first read issue using time dependent read volt...
- Patent number 9,711,231
- Issue date Jul 18, 2017
- SanDisk Technologies LLC
- Chris Yip
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for preconditioning currents to reduce errors...
- Patent number 9,704,588
- Issue date Jul 11, 2017
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-detecting a heating event to non-volatile storage
- Patent number 9,704,595
- Issue date Jul 11, 2017
- SanDisk Technologies LLC
- Alon Eyal
- G11 - INFORMATION STORAGE
Information Patent Grant
Data storage device having reflow awareness
- Patent number 9,583,206
- Issue date Feb 28, 2017
- SanDisk Technologies LLC
- Ting Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line dependent temperature compensation scheme during sensing...
- Patent number 9,543,028
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature dependent sensing scheme to counteract cross-temperatur...
- Patent number 9,530,512
- Issue date Dec 27, 2016
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile storage reflow detection
- Patent number 9,472,270
- Issue date Oct 18, 2016
- SanDisk Technologies LLC
- Guirong Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate NAND flash memory structure and array, method of program...
- Patent number 9,449,693
- Issue date Sep 20, 2016
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming non-volatile storage with fast bit detection and verify...
- Patent number RE46056
- Issue date Jul 5, 2016
- SanDisk Technologies LLC
- Changyuan Chen
- 001 -
Information Patent Grant
In-situ block folding for nonvolatile memory
- Patent number 9,201,788
- Issue date Dec 1, 2015
- SanDisk Technologies Inc.
- Chris Avila
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
In-situ block folding for nonvolatile memory
- Patent number 8,886,877
- Issue date Nov 11, 2014
- SanDisk Technologies Inc.
- Chris Avila
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory system with unverified program step
- Patent number 8,830,745
- Issue date Sep 9, 2014
- SanDisk Technologies Inc.
- Man Lung Mui
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate NAND flash memory structure and array, method of program...
- Patent number 8,780,642
- Issue date Jul 15, 2014
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming non-volatile storage with fast bit detection and verify...
- Patent number 8,456,915
- Issue date Jun 4, 2013
- SanDisk Technologies Inc.
- Changyuan Chen
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Grant
Programming non-volatile storage with fast bit detection and verify...
- Patent number 8,174,895
- Issue date May 8, 2012
- SanDisk Technologies Inc.
- Changyuan Chen
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Grant
Non-diffusion junction split-gate nonvolatile memory cells and arra...
- Patent number 8,164,135
- Issue date Apr 24, 2012
- Silicon Storage Technology, Inc.
- Changyuan Chen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY WITH SUB-BLOCK MODE AND FULL BLOCK MODE
- Publication number 20250054550
- Publication date Feb 13, 2025
- Western Digital Technologies, Inc.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF REDUCING NEIGHBORING WORD-LINE INTERFERENCE
- Publication number 20210104280
- Publication date Apr 8, 2021
- SANDISK TECHNOLOGIES LLC
- Sung-Chul Lee
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING TO MINIMIZE CROSS-TEMPERATURE THRESHOLD VOLTAGE WIDENING
- Publication number 20210050054
- Publication date Feb 18, 2021
- SANDISK TECHNOLOGIES LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Application
Post Write Erase Conditioning
- Publication number 20200152281
- Publication date May 14, 2020
- Western Digital Technologies, Inc.
- Mohan Vamsi Dunga
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL NAND MEMORY DEVICE WITH DRAIN SELECT GATE ELECTRO...
- Publication number 20190333581
- Publication date Oct 31, 2019
- SANDISK TECHNOLOGIES LLC
- Vinh DIEP
- G11 - INFORMATION STORAGE
Information Patent Application
POST WRITE ERASE CONDITIONING
- Publication number 20190156902
- Publication date May 23, 2019
- Western Digital Technologies, Inc.
- Mohan Vamsi Dunga
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile Memory With Methods To Reduce Creep-Up Field Between D...
- Publication number 20190035480
- Publication date Jan 31, 2019
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM AND METHOD FOR STRING-BASED ERASE VERIFY TO CREATE PARTIAL G...
- Publication number 20180342304
- Publication date Nov 29, 2018
- Western Digital Technologies, Inc.
- Mohan Dunga
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
POST WRITE ERASE CONDITIONING
- Publication number 20180286487
- Publication date Oct 4, 2018
- WESTERN DIGITAL TECHNOLOGIES, INC.
- Mohan Vamsi Dunga
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WRITE VERIFICATION USING TEMPERATURE COMPENSATION
- Publication number 20180189135
- Publication date Jul 5, 2018
- Western Digital Technologies, Inc.
- HIMANSHU HEMANT NAIK
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Erase For Partially Programmed Blocks In Non-Volatile Memory
- Publication number 20180122489
- Publication date May 3, 2018
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE SPEED BASED WORD LINE CONTROL
- Publication number 20170372789
- Publication date Dec 28, 2017
- SanDisk Technologies LLC
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Application
CELL CURRENT BASED BIT LINE VOLTAGE
- Publication number 20170358365
- Publication date Dec 14, 2017
- SanDisk Technologies LLC
- Biswajit Ray
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Split Gate NAND Flash Memory Structure And Array, Method Of Program...
- Publication number 20170032846
- Publication date Feb 2, 2017
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE STORAGE REFLOW DETECTION
- Publication number 20160118112
- Publication date Apr 28, 2016
- SANDISK TECHNOLGOIES INC.
- Guirong Liang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DATA STORAGE DEVICE HAVING REFLOW AWARENESS
- Publication number 20160099078
- Publication date Apr 7, 2016
- SanDisk Technologies Inc.
- TING LUO
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE DEPENDENT SENSING SCHEME TO COUNTERACT CROSS-TEMPERATUR...
- Publication number 20160086674
- Publication date Mar 24, 2016
- SANDISK TECHNOLOGIES INC.
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE DEPENDENT TEMPERATURE COMPENSATION SCHEME DURING SENSING...
- Publication number 20160086675
- Publication date Mar 24, 2016
- SANDISK TECHNOLOGIES INC.
- Biswajit Ray
- G11 - INFORMATION STORAGE
Information Patent Application
In-Situ Block Folding for Nonvolatile Memory
- Publication number 20150331626
- Publication date Nov 19, 2015
- SANDISK TECHNOLOGIES INC.
- Chris Avila
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Split Gate NAND Flash Memory Structure And Array, Method Of Program...
- Publication number 20140340967
- Publication date Nov 20, 2014
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
Memory System with Unverified Program Step
- Publication number 20140022841
- Publication date Jan 23, 2014
- SANDISK TECHNOLOGIES INC.
- Man Lung Mui
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING NON-VOLATILE STORAGE WITH FAST BIT DETECTION AND VERIFY...
- Publication number 20120188824
- Publication date Jul 26, 2012
- Changyuan Chen
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Application
PROGRAMMING NON-VOLATILE STORAGE WITH FAST BIT DETECTION AND VERIFY...
- Publication number 20110170358
- Publication date Jul 14, 2011
- Changyuan Chen
- G10 - MUSICAL INSTRUMENTS ACOUSTICS
Information Patent Application
Split Gate NAND Flash Memory Structure and Array, Method of Program...
- Publication number 20100322015
- Publication date Dec 23, 2010
- Silicon Storage Technology, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
NON-DIFFUSION JUNCTION SPLIT-GATE NONVOLATILE MEMORY CELLS AND ARRA...
- Publication number 20100220533
- Publication date Sep 2, 2010
- Changyuan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Method And Apparatus For Reading And Programming A Non-Volatile Mem...
- Publication number 20090290430
- Publication date Nov 26, 2009
- Jack Frayer
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Semiconductor Metal-Insulator-Semiconductor Capacitor
- Publication number 20090096507
- Publication date Apr 16, 2009
- Silicon Storage Technology, Inc.
- Feng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-DIFFUSION JUNCTION SPLIT-GATE NONVOLATILE MEMORY CELLS AND ARRA...
- Publication number 20090016113
- Publication date Jan 15, 2009
- Silicon Storage Technology, Inc.
- Changyuan Chen
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID PROGRAMMING METHODS AND SYSTEMS FOR NON-VOLATILE MEMORY STOR...
- Publication number 20080084761
- Publication date Apr 10, 2008
- SanDisk Corporation
- Dana Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Split gate NAND flash memory structure and array, method of program...
- Publication number 20070237005
- Publication date Oct 11, 2007
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE

Changyuan Chen

Person

Patents Grantslast 30 patents

Programming to minimize cross-temperature threshold voltage widening

Post write erase conditioning

Memory device with reduced neighbor word line interference using ad...

Three dimensional NAND memory device with drain select gate electro...

Post write erase conditioning

System and method for string-based erase verify to create partial g...

Memory write verification using temperature compensation

Erase speed based word line control

Post write erase conditioning

Non-volatile memory with methods to reduce creep-up field between d...

Erase for partially programmed blocks in non-volatile memory

Cell current based bit line voltage

System and method for programming a memory device with multiple wri...

Method of programming a continuous-channel flash memory device

System solution for first read issue using time dependent read volt...

Apparatus and method for preconditioning currents to reduce errors...

Self-detecting a heating event to non-volatile storage

Data storage device having reflow awareness

Word line dependent temperature compensation scheme during sensing...

Temperature dependent sensing scheme to counteract cross-temperatur...

Nonvolatile storage reflow detection

Split gate NAND flash memory structure and array, method of program...

Programming non-volatile storage with fast bit detection and verify...

In-situ block folding for nonvolatile memory

In-situ block folding for nonvolatile memory

Memory system with unverified program step

Split gate NAND flash memory structure and array, method of program...

Programming non-volatile storage with fast bit detection and verify...

Programming non-volatile storage with fast bit detection and verify...

Non-diffusion junction split-gate nonvolatile memory cells and arra...

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY WITH SUB-BLOCK MODE AND FULL BLOCK MODE

METHOD OF REDUCING NEIGHBORING WORD-LINE INTERFERENCE

PROGRAMMING TO MINIMIZE CROSS-TEMPERATURE THRESHOLD VOLTAGE WIDENING

Post Write Erase Conditioning

THREE DIMENSIONAL NAND MEMORY DEVICE WITH DRAIN SELECT GATE ELECTRO...

POST WRITE ERASE CONDITIONING

Non-volatile Memory With Methods To Reduce Creep-Up Field Between D...

SYSTEM AND METHOD FOR STRING-BASED ERASE VERIFY TO CREATE PARTIAL G...

POST WRITE ERASE CONDITIONING

MEMORY WRITE VERIFICATION USING TEMPERATURE COMPENSATION

Erase For Partially Programmed Blocks In Non-Volatile Memory

ERASE SPEED BASED WORD LINE CONTROL

CELL CURRENT BASED BIT LINE VOLTAGE

Split Gate NAND Flash Memory Structure And Array, Method Of Program...

NONVOLATILE STORAGE REFLOW DETECTION

DATA STORAGE DEVICE HAVING REFLOW AWARENESS

TEMPERATURE DEPENDENT SENSING SCHEME TO COUNTERACT CROSS-TEMPERATUR...

WORD LINE DEPENDENT TEMPERATURE COMPENSATION SCHEME DURING SENSING...

In-Situ Block Folding for Nonvolatile Memory

Split Gate NAND Flash Memory Structure And Array, Method Of Program...

Memory System with Unverified Program Step

PROGRAMMING NON-VOLATILE STORAGE WITH FAST BIT DETECTION AND VERIFY...

PROGRAMMING NON-VOLATILE STORAGE WITH FAST BIT DETECTION AND VERIFY...

Split Gate NAND Flash Memory Structure and Array, Method of Program...

NON-DIFFUSION JUNCTION SPLIT-GATE NONVOLATILE MEMORY CELLS AND ARRA...

Method And Apparatus For Reading And Programming A Non-Volatile Mem...

Integrated Semiconductor Metal-Insulator-Semiconductor Capacitor

NON-DIFFUSION JUNCTION SPLIT-GATE NONVOLATILE MEMORY CELLS AND ARRA...

HYBRID PROGRAMMING METHODS AND SYSTEMS FOR NON-VOLATILE MEMORY STOR...

Split gate NAND flash memory structure and array, method of program...