Chanyuan Hu

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for cutting off FIN field effect transistor
- Patent number 11,640,910
- Issue date May 2, 2023
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET transistor cut etching process method
- Patent number 11,637,194
- Issue date Apr 25, 2023
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,610,981
- Issue date Mar 21, 2023
- Shanghai Huali Integrated Circuit Corporation
- Changhung Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,581,225
- Issue date Feb 14, 2023
- Shanghai Huali Integrated Circuit Corporation
- Changhung Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making self-aligned double pattern
- Patent number 11,270,891
- Issue date Mar 8, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method for cutting polysilicon gate of FinFET transistor
- Patent number 11,152,263
- Issue date Oct 19, 2021
- Shanghai Huali Integrated Circuit Corporation
- Jhencyuan Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Manufacturing Integrated Metal Resistance Layer
- Publication number 20230088046
- Publication date Mar 23, 2023
- Shanghai Huali Integrated Circuit Corporation
- Changhung Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220246762
- Publication date Aug 4, 2022
- Shanghai Huali Integrated Circuit Corporation
- Jhencyuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CUTTING OFF FIN FIELD EFFECT TRANSISTOR
- Publication number 20220102154
- Publication date Mar 31, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Semiconductor Device
- Publication number 20210408268
- Publication date Dec 30, 2021
- Shanghai Huali Integrated Circuit Corporation
- Changhung Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Making Self-Aligned Double Pattern
- Publication number 20210391183
- Publication date Dec 16, 2021
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Semiconductor Device
- Publication number 20210375689
- Publication date Dec 2, 2021
- Shanghai Huali Integrated Circuit Corporation
- Changhung Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Transistor Cut Etching Process Method
- Publication number 20210119023
- Publication date Apr 22, 2021
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process Method for Cutting Polysilicon Gate of FinFET Transistor
- Publication number 20210118741
- Publication date Apr 22, 2021
- Shanghai Huali Integrated Circuit Corporation
- Jhencyuan Li
- H01 - BASIC ELECTRIC ELEMENTS

Chanyuan Hu

Person

Patents Grantslast 30 patents

Method for cutting off FIN field effect transistor

FinFET transistor cut etching process method

Method for manufacturing semiconductor device

Method for manufacturing semiconductor device

Method for making self-aligned double pattern

Process method for cutting polysilicon gate of FinFET transistor

Patents Applicationslast 30 patents

Method for Manufacturing Integrated Metal Resistance Layer

METAL GATE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR CUTTING OFF FIN FIELD EFFECT TRANSISTOR

Method for Manufacturing Semiconductor Device

Method for Making Self-Aligned Double Pattern

Method for Manufacturing Semiconductor Device

FinFET Transistor Cut Etching Process Method

Process Method for Cutting Polysilicon Gate of FinFET Transistor