Charan V.V.S. Surisetty

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 12,237,328
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including middle-of-line (MOL) capacitance...
- Patent number 12,237,368
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 11,664,375
- Issue date May 30, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including middle-of-line (MOL) capacitance...
- Patent number 11,522,045
- Issue date Dec 6, 2022
- TESSERA LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming dual metallization interconnect structures in single metall...
- Patent number 11,037,875
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Hari P. Amanapu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of improving contact resistance for passive an...
- Patent number 11,038,055
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming dual metallization interconnect structures in single metall...
- Patent number 11,031,337
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Hari P. Amanapu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimize middle-of-line contact line shorts
- Patent number 11,011,429
- Issue date May 18, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including middle-of-line (MOL) capacitance...
- Patent number 10,937,861
- Issue date Mar 2, 2021
- Tessera, Inc.
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 10,923,471
- Issue date Feb 16, 2021
- Tessera, Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon residue removal in nanosheet transistors
- Patent number 10,896,816
- Issue date Jan 19, 2021
- International Business Machines Corporation
- Zhenxing Bi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Simultaneously fabricating a high voltage transistor and a FinFET
- Patent number 10,811,410
- Issue date Oct 20, 2020
- ELPIS TECHNOLOGIES INC.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimize middle-of-line contact line shorts
- Patent number 10,804,159
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer for trench epitaxial structures
- Patent number 10,790,284
- Issue date Sep 29, 2020
- ELPIS TECHNOLOGIES INC.
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line (MOL) capacitance reduction for self-aligned contact...
- Patent number 10,763,326
- Issue date Sep 1, 2020
- Tessera, Inc.
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer for trench epitaxial structures
- Patent number 10,741,559
- Issue date Aug 11, 2020
- ELPIS TECHNOLOGIES INC.
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned low dielectric constant gate cap and a method of formi...
- Patent number 10,699,951
- Issue date Jun 30, 2020
- ELPIS TECHNOLOGIES INC.
- Balasubramanian Pranatharthiharan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance reduction for advanced technology nodes
- Patent number 10,629,721
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet isolation for bulk CMOS non-planar devices
- Patent number 10,559,654
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Balasubramanian Pranatharthiharan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Forming dual metallization interconnect structures in single metall...
- Patent number 10,559,530
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Hari P. Amanapu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimize middle-of-line contact line shorts
- Patent number 10,490,454
- Issue date Nov 26, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of improving contact resistance for passive an...
- Patent number 10,396,200
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device replacement metal gate with gate cut last in RMG
- Patent number 10,381,458
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET trench dipole formation
- Patent number 10,361,203
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including middle-of-line (MOL) capacitance...
- Patent number 10,355,080
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simultaneously fabricating a high voltage transistor and a FinFET
- Patent number 10,347,628
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming spacer for trench epitaxial structures
- Patent number 10,347,632
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer for trench epitaxial structures
- Patent number 10,347,633
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned local interconnect technology
- Patent number 10,325,848
- Issue date Jun 18, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 10,276,569
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20240055426
- Publication date Feb 15, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...
- Publication number 20230299134
- Publication date Sep 21, 2023
- TESSERA LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...
- Publication number 20210210596
- Publication date Jul 8, 2021
- Tessera, Inc.
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20210183856
- Publication date Jun 17, 2021
- Tessera, Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZE MIDDLE-OF-LINE CONTACT LINE SHORTS
- Publication number 20200402860
- Publication date Dec 24, 2020
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZE MIDDLE-OF-LINE CONTACT LINE SHORTS
- Publication number 20200051866
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING DUAL METALLIZATION INTERCONNECT STRUCTURES IN SINGLE METALL...
- Publication number 20190311986
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Hari P. Amanapu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF IMPROVING CONTACT RESISTANCE FOR PASSIVE AN...
- Publication number 20190305132
- Publication date Oct 3, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FOR TRENCH EPITAXIAL STRUCTURES
- Publication number 20190296015
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMULTANEOUSLY FABRICATING A HIGH VOLTAGE TRANSISTOR AND A FINFET
- Publication number 20190287968
- Publication date Sep 19, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FOR TRENCH EPITAXIAL STRUCTURES
- Publication number 20190279983
- Publication date Sep 12, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...
- Publication number 20190259831
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING DUAL METALLIZATION INTERCONNECT STRUCTURES IN SINGLE METALL...
- Publication number 20190221519
- Publication date Jul 18, 2019
- International Business Machines Corporation
- Hari P. Amanapu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20190206865
- Publication date Jul 4, 2019
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING DUAL METALLIZATION INTERCONNECT STRUCTURES IN SINGLE METALL...
- Publication number 20190198444
- Publication date Jun 27, 2019
- International Business Machines Corporation
- Hari P. Amanapu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE (MOL) CAPACITANCE REDUCTION FOR SELF-ALIGNED CONTACT...
- Publication number 20190157388
- Publication date May 23, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE REDUCTION FOR ADVANCED TECHNOLOGY NODES
- Publication number 20190148535
- Publication date May 16, 2019
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON RESIDUE REMOVAL IN NANOSHEET TRANSISTORS
- Publication number 20190096669
- Publication date Mar 28, 2019
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED LOCAL INTERCONNECT TECHNOLOGY
- Publication number 20190013268
- Publication date Jan 10, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZE MIDDLE-OF-LINE CONTACT LINE SHORTS
- Publication number 20180323109
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF IMPROVING CONTACT RESISTANCE FOR PASSIVE AN...
- Publication number 20180294356
- Publication date Oct 11, 2018
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FOR TRENCH EPITAXIAL STRUCTURES
- Publication number 20180254275
- Publication date Sep 6, 2018
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FOR TRENCH EPITAXIAL STRUCTURES
- Publication number 20180254274
- Publication date Sep 6, 2018
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
- Publication number 20180204837
- Publication date Jul 19, 2018
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED LOW DIELECTRIC CONSTANT GATE CAP AND A METHOD OF FORMI...
- Publication number 20180090375
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Balasubramanian Pranatharthiharan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET ISOLATION FOR BULK CMOS NON-PLANAR DEVICES
- Publication number 20180090566
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Balasubramanian Pranatharthiharan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED LOW DIELECTRIC CONSTANT GATE CAP AND A METHOD OF FORMI...
- Publication number 20180082895
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Balasubramanian Pranatharthiharan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF IMPROVING CONTACT RESISTANCE FOR PASSIVE AN...
- Publication number 20180053851
- Publication date Feb 22, 2018
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING SHORTING BETWEEN SOURCE AND/OR DRAIN CONTACTS AND GATE
- Publication number 20180047727
- Publication date Feb 15, 2018
- GLOBALFOUNDRIES INC.
- Charan V. SURISETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETs WITH HIGH QUALITY SOURCE/DRAIN STRUCTURES
- Publication number 20180033857
- Publication date Feb 1, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Charan V.V.S. Surisetty

Person

Patents Grantslast 30 patents

Minimizing shorting between FinFET epitaxial regions

Semiconductor structures including middle-of-line (MOL) capacitance...

Minimizing shorting between FinFET epitaxial regions

Semiconductor structures including middle-of-line (MOL) capacitance...

Forming dual metallization interconnect structures in single metall...

Method and structure of improving contact resistance for passive an...

Forming dual metallization interconnect structures in single metall...

Minimize middle-of-line contact line shorts

Semiconductor structures including middle-of-line (MOL) capacitance...

Minimizing shorting between FinFET epitaxial regions

Silicon residue removal in nanosheet transistors

Simultaneously fabricating a high voltage transistor and a FinFET

Minimize middle-of-line contact line shorts

Spacer for trench epitaxial structures

Middle-of-line (MOL) capacitance reduction for self-aligned contact...

Spacer for trench epitaxial structures

Self-aligned low dielectric constant gate cap and a method of formi...

Contact resistance reduction for advanced technology nodes

Nanosheet isolation for bulk CMOS non-planar devices

Forming dual metallization interconnect structures in single metall...

Minimize middle-of-line contact line shorts

Method and structure of improving contact resistance for passive an...

Semiconductor device replacement metal gate with gate cut last in RMG

FET trench dipole formation

Semiconductor structures including middle-of-line (MOL) capacitance...

Simultaneously fabricating a high voltage transistor and a FinFET

Forming spacer for trench epitaxial structures

Spacer for trench epitaxial structures

Self-aligned local interconnect technology

Minimizing shorting between FinFET epitaxial regions

Patents Applicationslast 30 patents

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...

SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

MINIMIZE MIDDLE-OF-LINE CONTACT LINE SHORTS

MINIMIZE MIDDLE-OF-LINE CONTACT LINE SHORTS

FORMING DUAL METALLIZATION INTERCONNECT STRUCTURES IN SINGLE METALL...

METHOD AND STRUCTURE OF IMPROVING CONTACT RESISTANCE FOR PASSIVE AN...

SPACER FOR TRENCH EPITAXIAL STRUCTURES

SIMULTANEOUSLY FABRICATING A HIGH VOLTAGE TRANSISTOR AND A FINFET

SPACER FOR TRENCH EPITAXIAL STRUCTURES

SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...

FORMING DUAL METALLIZATION INTERCONNECT STRUCTURES IN SINGLE METALL...

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

FORMING DUAL METALLIZATION INTERCONNECT STRUCTURES IN SINGLE METALL...

MIDDLE-OF-LINE (MOL) CAPACITANCE REDUCTION FOR SELF-ALIGNED CONTACT...

CONTACT RESISTANCE REDUCTION FOR ADVANCED TECHNOLOGY NODES

SILICON RESIDUE REMOVAL IN NANOSHEET TRANSISTORS

SELF-ALIGNED LOCAL INTERCONNECT TECHNOLOGY

MINIMIZE MIDDLE-OF-LINE CONTACT LINE SHORTS

METHOD AND STRUCTURE OF IMPROVING CONTACT RESISTANCE FOR PASSIVE AN...

SPACER FOR TRENCH EPITAXIAL STRUCTURES

SPACER FOR TRENCH EPITAXIAL STRUCTURES

MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS

SELF-ALIGNED LOW DIELECTRIC CONSTANT GATE CAP AND A METHOD OF FORMI...

NANOSHEET ISOLATION FOR BULK CMOS NON-PLANAR DEVICES

SELF-ALIGNED LOW DIELECTRIC CONSTANT GATE CAP AND A METHOD OF FORMI...

METHOD AND STRUCTURE OF IMPROVING CONTACT RESISTANCE FOR PASSIVE AN...

PREVENTING SHORTING BETWEEN SOURCE AND/OR DRAIN CONTACTS AND GATE

FINFETs WITH HIGH QUALITY SOURCE/DRAIN STRUCTURES