Charles W. Koburger III

Person

Delmar, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Size-filtered multimetal structures
- Patent number 10,134,631
- Issue date Nov 20, 2018
- International Business Machines Corporation
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced capacitance
- Patent number 10,032,773
- Issue date Jul 24, 2018
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced capacitance
- Patent number 9,947,763
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet with reduced capacitance
- Patent number 9,941,385
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate electrode with a self-aligned dielectric spacer
- Patent number 9,660,030
- Issue date May 23, 2017
- GLOBALFOUNDRIES Inc.
- Shom Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned dielectric isolation for FinFET devices
- Patent number 9,627,377
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Borderless contact structure
- Patent number 9,620,619
- Issue date Apr 11, 2017
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced capacitance
- Patent number 9,536,979
- Issue date Jan 3, 2017
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Under-spacer doping in fin-based semiconductor devices
- Patent number 9,496,356
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Size-filtered multimetal structures
- Patent number 9,484,254
- Issue date Nov 1, 2016
- International Business Machines Corporation
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Under-spacer doping in fin-based semiconductor devices
- Patent number 9,455,323
- Issue date Sep 27, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure having selectively formed metal cap
- Patent number 9,379,198
- Issue date Jun 28, 2016
- GLOBALFOUNDRIES Inc.
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator transistor with self-aligned borderless source...
- Patent number 9,368,590
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Susan S. Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced capacitance
- Patent number 9,312,275
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene dual alignment interconnect scheme
- Patent number 9,269,621
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overlay-tolerant via mask and reactive ion etch (RIE) technique
- Patent number 9,263,388
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-lithographic semiconductor structures with non-constant pitch
- Patent number 9,263,290
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES INC.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask free protection of work function material portions in wide rep...
- Patent number 9,202,879
- Issue date Dec 1, 2015
- GLOBALFOUNDRIES Inc.
- Charles W. Koburger
- E21 - EARTH DRILLING MINING
Information Patent Grant
Stress inducing contact metal in FinFET CMOS
- Patent number 9,196,613
- Issue date Nov 24, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-lithographic semiconductor structures with non-constant pitch
- Patent number 9,177,820
- Issue date Nov 3, 2015
- GlobalFoundries U.S. 2 LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structures and methods for back end of the line integr...
- Patent number 9,141,749
- Issue date Sep 22, 2015
- International Business Machines Corporation
- David V. Horak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Profile control in interconnect structures
- Patent number 9,105,641
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Shyng-Tsong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overlay-tolerant via mask and reactive ion etch (RIE) technique
- Patent number 9,059,254
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced capacitance
- Patent number 9,040,363
- Issue date May 26, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-metal self-aligned wires and vias
- Patent number 8,946,908
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic substrate having removable edge extension element
- Patent number 8,946,866
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Charles W. Koburger
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Finfets and fin isolation structures
- Patent number 8,941,179
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned dielectric isolation for FinFET devices
- Patent number 8,941,156
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon nanotube structures for enhancement of thermal dissipation f...
- Patent number 8,933,559
- Issue date Jan 13, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field-effect-transistor with self-aligned diffusion contact
- Patent number 8,928,091
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Charles W. Koburger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH REDUCED CAPACITANCE
- Publication number 20170047327
- Publication date Feb 16, 2017
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIZE-FILTERED MULTIMETAL STRUCTURES
- Publication number 20160204064
- Publication date Jul 14, 2016
- International Business Machines Corporation
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED CAPACITANCE
- Publication number 20160204225
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED CAPACITANCE
- Publication number 20160204132
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED CAPACITANCE
- Publication number 20160093727
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDER-SPACER DOPING IN FIN-BASED SEMICONDUCTOR DEVICES
- Publication number 20160064527
- Publication date Mar 3, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDER-SPACER DOPING IN FIN-BASED SEMICONDUCTOR DEVICES
- Publication number 20160064501
- Publication date Mar 3, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH
- Publication number 20150380262
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES Inc.
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INDUCING CONTACT METAL IN FINFET CMOS
- Publication number 20150357471
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVERLAY-TOLERANT VIA MASK AND REACTIVE ION ETCH (RIE) TECHNIQUE
- Publication number 20150221591
- Publication date Aug 6, 2015
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED CAPACITANCE
- Publication number 20150187816
- Publication date Jul 2, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INDUCING CONTACT METAL IN FINFET CMOS
- Publication number 20150137181
- Publication date May 21, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DIELECTRIC ISOLATION FOR FINFET DEVICES
- Publication number 20150061040
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FOR ENHANCING VIA PATTERN OVERLAY TOLERENCE
- Publication number 20150035157
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL IN INTERCONNECT STRUCTURES
- Publication number 20150035154
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Shyng-Tsong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE HAVING SELECTIVELY FORMED METAL CAP
- Publication number 20150008527
- Publication date Jan 8, 2015
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE ELECTRODE WITH A SELF-ALIGNED DIELECTRIC SPACER
- Publication number 20140363941
- Publication date Dec 11, 2014
- Shom Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL DAMASCENE DUAL ALIGNMENT INTERCONNECT SCHEME
- Publication number 20140342549
- Publication date Nov 20, 2014
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED CAPACITANCE
- Publication number 20140284667
- Publication date Sep 25, 2014
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE ELECTRODE WITH A SELF-ALIGNED DIELECTRIC SPACER
- Publication number 20140264490
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Shom Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS AND FIN ISOLATION STRUCTURES
- Publication number 20140231918
- Publication date Aug 21, 2014
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR-DIELECTRIC FOR SUBTRACTIVE ETCH LINE AND VIA METALLIZATION
- Publication number 20140203453
- Publication date Jul 24, 2014
- International Business Machines Corporation
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL MANDREL SIDEWALL IMAGE TRANSFER PROCESSES
- Publication number 20140190935
- Publication date Jul 10, 2014
- International Business Machines Corporation
- David V. Horak
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELF-ALIGNED DIELECTRIC ISOLATION FOR FINFET DEVICES
- Publication number 20140191296
- Publication date Jul 10, 2014
- GLOBALFOUNDRIES, INC.
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FINFET OF VARIABLE CHANNEL WIDTH
- Publication number 20140191323
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH
- Publication number 20140110817
- Publication date Apr 24, 2014
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE FIN CUT EMPLOYING ANGLED PROCESSING METHODS
- Publication number 20140099792
- Publication date Apr 10, 2014
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT-TRANSISTOR WITH SELF-ALIGNED DIFFUSION CONTACT
- Publication number 20140091391
- Publication date Apr 3, 2014
- International Business Machines Corporation
- Charles W. Koburger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIZE-FILTERED MULTIMETAL STRUCTURES
- Publication number 20140065813
- Publication date Mar 6, 2014
- International Business Machines Corporation
- David V. Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR TRANSISTOR WITH SELF-ALIGNED BORDERLESS SOURCE...
- Publication number 20140061799
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Susan S. FAN
- H01 - BASIC ELECTRIC ELEMENTS

Charles W. Koburger III

Person

Patents Grantslast 30 patents

Size-filtered multimetal structures

FinFET with reduced capacitance

FinFET with reduced capacitance

Finfet with reduced capacitance

Replacement gate electrode with a self-aligned dielectric spacer

Self-aligned dielectric isolation for FinFET devices

Borderless contact structure

FinFET with reduced capacitance

Under-spacer doping in fin-based semiconductor devices

Size-filtered multimetal structures

Under-spacer doping in fin-based semiconductor devices

Integrated circuit structure having selectively formed metal cap

Silicon-on-insulator transistor with self-aligned borderless source...

FinFET with reduced capacitance

Dual damascene dual alignment interconnect scheme

Overlay-tolerant via mask and reactive ion etch (RIE) technique

Sub-lithographic semiconductor structures with non-constant pitch

Mask free protection of work function material portions in wide rep...

Stress inducing contact metal in FinFET CMOS

Sub-lithographic semiconductor structures with non-constant pitch

Interconnect structures and methods for back end of the line integr...

Profile control in interconnect structures

Overlay-tolerant via mask and reactive ion etch (RIE) technique

FinFET with reduced capacitance

Dual-metal self-aligned wires and vias

Microelectronic substrate having removable edge extension element

Finfets and fin isolation structures

Self-aligned dielectric isolation for FinFET devices

Carbon nanotube structures for enhancement of thermal dissipation f...

Field-effect-transistor with self-aligned diffusion contact

Patents Applicationslast 30 patents

FINFET WITH REDUCED CAPACITANCE

SIZE-FILTERED MULTIMETAL STRUCTURES

FINFET WITH REDUCED CAPACITANCE

FINFET WITH REDUCED CAPACITANCE

FINFET WITH REDUCED CAPACITANCE

UNDER-SPACER DOPING IN FIN-BASED SEMICONDUCTOR DEVICES

UNDER-SPACER DOPING IN FIN-BASED SEMICONDUCTOR DEVICES

SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH

STRESS INDUCING CONTACT METAL IN FINFET CMOS

OVERLAY-TOLERANT VIA MASK AND REACTIVE ION ETCH (RIE) TECHNIQUE

FINFET WITH REDUCED CAPACITANCE

STRESS INDUCING CONTACT METAL IN FINFET CMOS

SELF-ALIGNED DIELECTRIC ISOLATION FOR FINFET DEVICES

SPACER FOR ENHANCING VIA PATTERN OVERLAY TOLERENCE

PROFILE CONTROL IN INTERCONNECT STRUCTURES

INTEGRATED CIRCUIT STRUCTURE HAVING SELECTIVELY FORMED METAL CAP

REPLACEMENT GATE ELECTRODE WITH A SELF-ALIGNED DIELECTRIC SPACER

DUAL DAMASCENE DUAL ALIGNMENT INTERCONNECT SCHEME

FINFET WITH REDUCED CAPACITANCE

REPLACEMENT GATE ELECTRODE WITH A SELF-ALIGNED DIELECTRIC SPACER

FINFETS AND FIN ISOLATION STRUCTURES

AIR-DIELECTRIC FOR SUBTRACTIVE ETCH LINE AND VIA METALLIZATION

DUAL MANDREL SIDEWALL IMAGE TRANSFER PROCESSES

SELF-ALIGNED DIELECTRIC ISOLATION FOR FINFET DEVICES

METHOD OF FORMING FINFET OF VARIABLE CHANNEL WIDTH

SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH

SINGLE FIN CUT EMPLOYING ANGLED PROCESSING METHODS

FIELD-EFFECT-TRANSISTOR WITH SELF-ALIGNED DIFFUSION CONTACT

SIZE-FILTERED MULTIMETAL STRUCTURES

SILICON-ON-INSULATOR TRANSISTOR WITH SELF-ALIGNED BORDERLESS SOURCE...