Charlotte D. Adams

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Precise bottom junction formation for vertical transport field effe...
- Patent number 12,068,415
- Issue date Aug 20, 2024
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide for nanosheet transistor devices
- Patent number 11,888,048
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precise bottom junction formation for vertical transport field effe...
- Patent number 11,515,427
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide for nanosheet transistor devices
- Patent number 11,211,474
- Issue date Dec 28, 2021
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer with laminate liner
- Patent number 10,755,918
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES, INC.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with robust low-k sidewall spacers and method...
- Patent number 10,192,791
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having different gate oxide thicknesses
- Patent number 9,087,722
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having different gate oxide thicknesses
- Patent number 8,941,177
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Charlotte DeWan Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stack and semiconductor gate stack for CMOS devices
- Patent number 8,030,709
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene copper interconnect to a damascene tungsten wiring l...
- Patent number 7,230,336
- Issue date Jun 12, 2007
- International Business Machines Corporation
- Charlotte D Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene copper interconnect to a damascene tungsten wiring l...
- Patent number 6,566,242
- Issue date May 20, 2003
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...
- Publication number 20240105769
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SHARED METAL GATE INTEGRATION FOR SCALED GATE ALL AROUND (GAA)...
- Publication number 20240079276
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...
- Publication number 20230029561
- Publication date Feb 2, 2023
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20220069104
- Publication date Mar 3, 2022
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...
- Publication number 20210391473
- Publication date Dec 16, 2021
- International Business Machines Corporation
- Kai Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES
- Publication number 20210217873
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER WITH LAMINATE LINER
- Publication number 20200161122
- Publication date May 21, 2020
- GLOBALFOUNDRIES INC.
- Man GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES
- Publication number 20150069525
- Publication date Mar 12, 2015
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES
- Publication number 20140001575
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Charlotte DeWan Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STACK AND SEMICONDUCTOR GATE STACK FOR CMOS DEVICES
- Publication number 20090179283
- Publication date Jul 16, 2009
- International Business Machines Corporation
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mixed gate CMOS with single poly deposition
- Publication number 20090114992
- Publication date May 7, 2009
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual damascene copper interconnect to a damascene tungsten wiring l...
- Publication number 20030232494
- Publication date Dec 18, 2003
- Charlotte D. Adams
- H01 - BASIC ELECTRIC ELEMENTS

Charlotte D. Adams

Person

Patents Grantslast 30 patents

Precise bottom junction formation for vertical transport field effe...

Gate oxide for nanosheet transistor devices

Precise bottom junction formation for vertical transport field effe...

Gate oxide for nanosheet transistor devices

Spacer with laminate liner

Semiconductor devices with robust low-k sidewall spacers and method...

Semiconductor devices having different gate oxide thicknesses

Semiconductor devices having different gate oxide thicknesses

Metal gate stack and semiconductor gate stack for CMOS devices

Dual damascene copper interconnect to a damascene tungsten wiring l...

Dual damascene copper interconnect to a damascene tungsten wiring l...

Patents Applicationslast 30 patents

STRUCTURE TO FORM AND INTEGRATE HIGH VOLTAGE FINFET I/O DEVICE WITH...

NON-SHARED METAL GATE INTEGRATION FOR SCALED GATE ALL AROUND (GAA)...

PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...

GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES

PRECISE BOTTOM JUNCTION FORMATION FOR VERTICAL TRANSPORT FIELD EFFE...

GATE OXIDE FOR NANOSHEET TRANSISTOR DEVICES

SPACER WITH LAMINATE LINER

SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES

SEMICONDUCTOR DEVICES HAVING DIFFERENT GATE OXIDE THICKNESSES

METAL GATE STACK AND SEMICONDUCTOR GATE STACK FOR CMOS DEVICES

Mixed gate CMOS with single poly deposition

Dual damascene copper interconnect to a damascene tungsten wiring l...