Che-Hung Liu

Person

Tainan County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Spacer structure wherein carbon-containing oxide film formed within
- Patent number 8,415,723
- Issue date Apr 9, 2013
- United Microelectronics Corp.
- Po-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure wherein carbon-containing oxynitride film formed w...
- Patent number 8,288,802
- Issue date Oct 16, 2012
- United Microelectronics Corp.
- Po-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor and fabrication thereof
- Patent number 7,592,231
- Issue date Sep 22, 2009
- United Microelectronics Corp.
- Po-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide-semiconductor device and fabricating meth...
- Patent number 7,402,496
- Issue date Jul 22, 2008
- United Microelectronics Corp.
- Che-Hung Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon-containing film and method for decreasin...
- Patent number 7,329,591
- Issue date Feb 12, 2008
- United Microelectronics Corp.
- Che-Hung Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
WAFER PROCESSING APPARATUS AND WAFER PROCESSING METHOD USING THE SAME
- Publication number 20170358446
- Publication date Dec 14, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yi WU
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Application
METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR
- Publication number 20170222026
- Publication date Aug 3, 2017
- UNITED MICROELECTRONICS CORP.
- Yi-Ren Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE WHEREIN CARBON-CONTAINING OXIDE FILM FORMED WITHIN
- Publication number 20120241824
- Publication date Sep 27, 2012
- Po-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHODS FOR MOS DEVICE AND CMOS DEVICE
- Publication number 20080171412
- Publication date Jul 17, 2008
- United Microelectronics Corp.
- Po-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE
- Publication number 20080116525
- Publication date May 22, 2008
- United Microelectronics Corp.
- Che-Hung Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE AND FABRICATING METH...
- Publication number 20080061366
- Publication date Mar 13, 2008
- United Microelectronics Corp.
- Che-Hung Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR AND FABRICATION THEREOF
- Publication number 20080032468
- Publication date Feb 7, 2008
- United Microelectronics Corp.
- Po-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20070246751
- Publication date Oct 25, 2007
- Po-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming silicon-containing film and method for decreasin...
- Publication number 20070197007
- Publication date Aug 23, 2007
- Che-Hung Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Che-Hung Liu

Person

Patents Grantslast 30 patents

Spacer structure wherein carbon-containing oxide film formed within

Spacer structure wherein carbon-containing oxynitride film formed w...

MOS transistor and fabrication thereof

Complementary metal-oxide-semiconductor device and fabricating meth...

Method for forming silicon-containing film and method for decreasin...

Patents Applicationslast 30 patents

WAFER PROCESSING APPARATUS AND WAFER PROCESSING METHOD USING THE SAME

METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR

SPACER STRUCTURE WHEREIN CARBON-CONTAINING OXIDE FILM FORMED WITHIN

FABRICATION METHODS FOR MOS DEVICE AND CMOS DEVICE

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE AND FABRICATING METH...

MOS TRANSISTOR AND FABRICATION THEREOF

SPACER STRUCTURE AND FABRICATION METHOD THEREOF

Method for forming silicon-containing film and method for decreasin...