Chen-Hao Po

Person

Sijhih City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Driving circuit for non-volatile memory
- Patent number 12,014,783
- Issue date Jun 18, 2024
- eMemory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with a new sensing sequence control method
- Patent number 10,410,691
- Issue date Sep 10, 2019
- eMemory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with one shared deep doped region
- Patent number 10,255,980
- Issue date Apr 9, 2019
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with one shared deep doped region
- Patent number 9,941,011
- Issue date Apr 10, 2018
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Driving circuit for non-volatile memory
- Patent number 9,882,566
- Issue date Jan 30, 2018
- eMemory Technology Inc.
- Chen-Hao Po
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Memory array capable of performing byte erase operation
- Patent number 9,847,133
- Issue date Dec 19, 2017
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Driving circuit for non-volatile memory
- Patent number 9,786,340
- Issue date Oct 10, 2017
- eMemory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Grant
Driving circuit for non-volatile memory
- Patent number 9,633,734
- Issue date Apr 25, 2017
- eMemory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage switch circuit
- Patent number 9,520,196
- Issue date Dec 13, 2016
- eMemory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage switch circuit
- Patent number 9,224,490
- Issue date Dec 29, 2015
- eMemory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory having a voltage switch circuit with one bias voltage change...
- Patent number 9,190,415
- Issue date Nov 17, 2015
- eMemory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory apparatus and data verification method thereof
- Patent number 9,019,780
- Issue date Apr 28, 2015
- Ememory Technology Inc.
- Yih-Lang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage switch circuit
- Patent number 8,841,942
- Issue date Sep 23, 2014
- eMemory Technology Inc.
- Chen-Hao Po
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Voltage switch circuit produced by logic circuit manufacturing proc...
- Patent number 8,653,878
- Issue date Feb 18, 2014
- eMemory Technology Inc.
- Chen-Hao Po
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Voltage level shifting apparatus
- Patent number 8,373,485
- Issue date Feb 12, 2013
- Ememory Technology Inc.
- Chen-Hao Po
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
2T SRAM cell structure
- Patent number 7,889,541
- Issue date Feb 15, 2011
- Faraday Technology Corp.
- Wei-Chiang Shih
- G11 - INFORMATION STORAGE
Information Patent Grant
Serial peripheral interface memory device with an accelerated paral...
- Patent number 7,397,717
- Issue date Jul 8, 2008
- Macronix International Co., Ltd.
- Han-Sung Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and method for tuning a reference bit line loading to a sen...
- Patent number 6,795,350
- Issue date Sep 21, 2004
- Macronix International Co., Ltd.
- Han-Sung Chen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DRIVING CIRCUIT FOR NON-VOLATILE MEMORY
- Publication number 20230223092
- Publication date Jul 13, 2023
- EMEMORY TECHNOLOGY INC.
- Chen-Hao PO
- G11 - INFORMATION STORAGE
Information Patent Application
DIFFERENTIAL TYPE NON-VOLATILE MEMORY CIRCUIT
- Publication number 20190325924
- Publication date Oct 24, 2019
- Ememory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH A NEW SENSING SEQUENCE CONTROL METHOD
- Publication number 20190214059
- Publication date Jul 11, 2019
- EMEMORY TECHNOLOGY INC.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY WITH ONE SHARED DEEP DOPED REGION
- Publication number 20180190357
- Publication date Jul 5, 2018
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVING CIRCUIT FOR NON-VOLATILE MEMORY
- Publication number 20170206941
- Publication date Jul 20, 2017
- EMEMORY TECHNOLOGY INC.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY WITH ONE SHARED DEEP DOPED REGION
- Publication number 20170206968
- Publication date Jul 20, 2017
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY CAPABLE OF PERFORMING BYTE ERASE OPERATION
- Publication number 20170206970
- Publication date Jul 20, 2017
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE SWITCH CIRCUIT
- Publication number 20160005487
- Publication date Jan 7, 2016
- EMEMORY TECHNOLOGY INC.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY APPARATUS AND DATA VERIFICATION METHOD THEREOF
- Publication number 20150098278
- Publication date Apr 9, 2015
- Ememory Technology Inc.
- Yih-Lang Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Memory having a voltage switch circuit with one bias voltage change...
- Publication number 20150092507
- Publication date Apr 2, 2015
- EMEMORY TECHNOLOGY INC.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE-ENDED SENSE AMPLIFIER CIRCUIT
- Publication number 20140177350
- Publication date Jun 26, 2014
- Ememory Technology Inc.
- Yung-Jui Chen
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE SWITCH CIRCUIT
- Publication number 20140103988
- Publication date Apr 17, 2014
- EMEMORY TECHNOLOGY INC.
- Chen-Hao Po
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
VOLTAGE SWITCH CIRCUIT
- Publication number 20130099850
- Publication date Apr 25, 2013
- EMEMORY TECHNOLOGY INC.
- Chen-Hao Po
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
VOLATGE LEVEL SHIFTING APPARATUS
- Publication number 20120268188
- Publication date Oct 25, 2012
- Ememory Technology Inc.
- Chen-Hao Po
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
VERIFY WHILE WRITE SCHEME FOR NON-VOLATILE MEMORY CELL
- Publication number 20110194355
- Publication date Aug 11, 2011
- Ememory Technology Inc.
- Chen-Hao Po
- G11 - INFORMATION STORAGE
Information Patent Application
2T SRAM CELL STRUCTURE
- Publication number 20090257273
- Publication date Oct 15, 2009
- FARADAY TECHNOLOGY CORPORATION
- WEI-CHIANG SHIH
- G11 - INFORMATION STORAGE
Information Patent Application
Serial peripheral interface memory device with an accelerated paral...
- Publication number 20060268642
- Publication date Nov 30, 2006
- MACRONIX INTERNATIONAL CO., LTD
- Han-Sung Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Circuit and method for tuning a reference bit line loading to a sen...
- Publication number 20040008546
- Publication date Jan 15, 2004
- Han-Sung Chen
- G11 - INFORMATION STORAGE

Chen-Hao Po

Person

Patents Grantslast 30 patents

Driving circuit for non-volatile memory

Non-volatile memory with a new sensing sequence control method

Memory array with one shared deep doped region

Memory array with one shared deep doped region

Driving circuit for non-volatile memory

Memory array capable of performing byte erase operation

Driving circuit for non-volatile memory

Driving circuit for non-volatile memory

Voltage switch circuit

Voltage switch circuit

Memory having a voltage switch circuit with one bias voltage change...

Non-volatile memory apparatus and data verification method thereof

Voltage switch circuit

Voltage switch circuit produced by logic circuit manufacturing proc...

Voltage level shifting apparatus

2T SRAM cell structure

Serial peripheral interface memory device with an accelerated paral...

Circuit and method for tuning a reference bit line loading to a sen...

Patents Applicationslast 30 patents

DRIVING CIRCUIT FOR NON-VOLATILE MEMORY

DIFFERENTIAL TYPE NON-VOLATILE MEMORY CIRCUIT

NON-VOLATILE MEMORY WITH A NEW SENSING SEQUENCE CONTROL METHOD

MEMORY ARRAY WITH ONE SHARED DEEP DOPED REGION

DRIVING CIRCUIT FOR NON-VOLATILE MEMORY

MEMORY ARRAY WITH ONE SHARED DEEP DOPED REGION

MEMORY ARRAY CAPABLE OF PERFORMING BYTE ERASE OPERATION

VOLTAGE SWITCH CIRCUIT

NON-VOLATILE MEMORY APPARATUS AND DATA VERIFICATION METHOD THEREOF

Memory having a voltage switch circuit with one bias voltage change...

SINGLE-ENDED SENSE AMPLIFIER CIRCUIT

VOLTAGE SWITCH CIRCUIT

VOLTAGE SWITCH CIRCUIT

VOLATGE LEVEL SHIFTING APPARATUS

VERIFY WHILE WRITE SCHEME FOR NON-VOLATILE MEMORY CELL

2T SRAM CELL STRUCTURE

Serial peripheral interface memory device with an accelerated paral...

Circuit and method for tuning a reference bit line loading to a sen...