Chen JingDe

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Singapore, SG

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a Yb-doped Ni full silicidation low work function...
- Patent number 7,504,329
- Issue date Mar 17, 2009
- Interuniversitair Microelektronica Centrum (IMEC)
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier source/drain n-mosfet using ytterbium silicide
- Patent number 7,504,328
- Issue date Mar 17, 2009
- National University of Singapore
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20090179281
- Publication date Jul 16, 2009
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20090163005
- Publication date Jun 25, 2009
- National University of Singapore
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW WORK FUNCTION METAL ALLOY
- Publication number 20060286802
- Publication date Dec 21, 2006
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Publication number 20050275033
- Publication date Dec 15, 2005
- Shiyang Zhu
- H01 - BASIC ELECTRIC ELEMENTS