Chenchen Jacob WANG

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Storage layer for magnetic memory with high thermal stability
- Patent number 10,840,297
- Issue date Nov 17, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic field assisted MRAM structures, integrated circuits, and m...
- Patent number 10,593,866
- Issue date Mar 17, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chenchen Jacob Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory structures, integrated circuits, and...
- Patent number 10,516,096
- Issue date Dec 24, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory structures, integrated circuits, and...
- Patent number 10,446,205
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Shielded MRAM cell
- Patent number 10,439,129
- Issue date Oct 8, 2019
- GLOBALFOUNDRIES Inc.
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with memory cell test circuits and methods for...
- Patent number 10,381,339
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chenchen Jacob Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with magnetic tunnel junctions and methods for...
- Patent number 10,381,554
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of shielding an embedded MRAM array on an integrated circui...
- Patent number 10,374,154
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM with metal-insulator-transition material
- Patent number 10,134,459
- Issue date Nov 20, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage layer for magnetic memory with high thermal stability
- Patent number 10,128,309
- Issue date Nov 13, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget magnetic memory
- Patent number 9,666,640
- Issue date May 30, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration of spintronic devices with memory device
- Patent number 9,660,183
- Issue date May 23, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chenchen Jacob Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory cells with fast read/write speed
- Patent number 9,570,138
- Issue date Feb 14, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensor arrangement
- Patent number 8,659,853
- Issue date Feb 25, 2014
- Agency for Science, Technology and Research
- Guchang Han
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
ENCAPSULATED MAGNETIC TUNNEL JUNCTION (MTJ) STRUCTURES
- Publication number 20200033425
- Publication date Jan 30, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chenchen Jacob Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC FIELD ASSISTED MRAM STRUCTURES, INTEGRATED CIRCUITS, AND M...
- Publication number 20200006624
- Publication date Jan 2, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chenchen Jacob Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY STRUCTURES, INTEGRATED CIRCUITS, AND...
- Publication number 20190305210
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh Tahmasebi
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY STRUCTURES, INTEGRATED CIRCUITS, AND...
- Publication number 20190304522
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh Tahmasebi
- B82 - NANO-TECHNOLOGY
Information Patent Application
SHIELDED MRAM CELL
- Publication number 20190221732
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SHIELDING AN EMBEDDED MRAM ARRAY ON AN INTEGRATED CIRCUI...
- Publication number 20190221736
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Dimitri Houssameddine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...
- Publication number 20190081234
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE LAYER FOR MAGNETIC MEMORY WITH HIGH THERMAL STABILITY
- Publication number 20190067368
- Publication date Feb 28, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS INCLUDING MAGNETIC RANDOM ACCESS MEMORY STRUCTU...
- Publication number 20180182809
- Publication date Jun 28, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Hongxi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE LAYER FOR MAGNETIC MEMORY WITH HIGH THERMAL STABILITY
- Publication number 20160284763
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH THERMAL BUDGET MAGNETIC MEMORY
- Publication number 20160276407
- Publication date Sep 22, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATION OF SPINTRONIC DEVICES WITH MEMORY DEVICE
- Publication number 20160254440
- Publication date Sep 1, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chenchen Jacob WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM WITH METAL-INSULATOR-TRANSITION MATERIAL
- Publication number 20160225818
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY CELLS WITH FAST READ/WRITE SPEED
- Publication number 20160225429
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- G11 - INFORMATION STORAGE
Information Patent Application
Sensor Arrangement
- Publication number 20120225322
- Publication date Sep 6, 2012
- AGENCY FOR SCIENCE TECHNOLOGY AND RESEARCH
- Guchang Han
- G11 - INFORMATION STORAGE

Chenchen Jacob WANG

Person

Patents Grantslast 30 patents

Storage layer for magnetic memory with high thermal stability

Magnetic field assisted MRAM structures, integrated circuits, and m...

Magnetic random access memory structures, integrated circuits, and...

Magnetic random access memory structures, integrated circuits, and...

Shielded MRAM cell

Integrated circuits with memory cell test circuits and methods for...

Integrated circuits with magnetic tunnel junctions and methods for...

Methods of shielding an embedded MRAM array on an integrated circui...

MRAM with metal-insulator-transition material

Storage layer for magnetic memory with high thermal stability

High thermal budget magnetic memory

Integration of spintronic devices with memory device

Magnetic memory cells with fast read/write speed

Sensor arrangement

Patents Applicationslast 30 patents

ENCAPSULATED MAGNETIC TUNNEL JUNCTION (MTJ) STRUCTURES

MAGNETIC FIELD ASSISTED MRAM STRUCTURES, INTEGRATED CIRCUITS, AND M...

MAGNETIC RANDOM ACCESS MEMORY STRUCTURES, INTEGRATED CIRCUITS, AND...

MAGNETIC RANDOM ACCESS MEMORY STRUCTURES, INTEGRATED CIRCUITS, AND...

SHIELDED MRAM CELL

METHODS OF SHIELDING AN EMBEDDED MRAM ARRAY ON AN INTEGRATED CIRCUI...

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...

STORAGE LAYER FOR MAGNETIC MEMORY WITH HIGH THERMAL STABILITY

INTEGRATED CIRCUITS INCLUDING MAGNETIC RANDOM ACCESS MEMORY STRUCTU...

STORAGE LAYER FOR MAGNETIC MEMORY WITH HIGH THERMAL STABILITY

HIGH THERMAL BUDGET MAGNETIC MEMORY

INTEGRATION OF SPINTRONIC DEVICES WITH MEMORY DEVICE

MRAM WITH METAL-INSULATOR-TRANSITION MATERIAL

MAGNETIC MEMORY CELLS WITH FAST READ/WRITE SPEED

Sensor Arrangement