Cheng Chi

Person

Jersey City, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Random weight initialization of non-volatile memory array
- Patent number 12,135,497
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Cheng Chi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Decoupling capacitor inside gate cut trench
- Patent number 12,057,387
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric and paraelectric stack capacitors
- Patent number 11,990,470
- Issue date May 21, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact inside gate cut trench
- Patent number 11,916,014
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer dielectric for metal-insulator-metal capacitor
- Patent number 11,916,099
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure for a transistor device
- Patent number 11,621,333
- Issue date Apr 4, 2023
- GLOBALFOUNDRIES U.S. INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change memory device with reduced programming voltage
- Patent number 11,588,105
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) devices
- Patent number 11,527,647
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low capacitance low RC wrap-around-contact
- Patent number 11,508,823
- Issue date Nov 22, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory cell
- Patent number 11,502,252
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive switching memory cell
- Patent number 11,456,416
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistance drift mitigation in non-volatile memory cell
- Patent number 11,430,954
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NCFETS with complimentary capacitance matching using stacked n-type...
- Patent number 11,424,362
- Issue date Aug 23, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical resistive memory device with embedded selectors
- Patent number 11,335,730
- Issue date May 17, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned top via structure
- Patent number 11,205,592
- Issue date Dec 21, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet devices with improved electrostatic integrity
- Patent number 10,916,630
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform bottom spacer for VFET devices
- Patent number 10,916,650
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact over active region with self-aligned source/drain contact
- Patent number 10,832,943
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having equal thickness gate spacers
- Patent number 10,763,342
- Issue date Sep 1, 2020
- Interanational Business Machines Corporation
- Cheng Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure for a transistor
- Patent number 10,727,308
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for VFET top source/drain epitaxy
- Patent number 10,680,064
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of concurrently forming source/drain and gate contacts and r...
- Patent number 10,665,586
- Issue date May 26, 2020
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with robust source/drain isolation from substrate
- Patent number 10,658,459
- Issue date May 19, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform bottom spacer for VFET devices
- Patent number 10,622,475
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned finFET formation
- Patent number 10,593,782
- Issue date Mar 17, 2020
- International Business Machines Corporation
- Cheng Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate contact structure for a transistor
- Patent number 10,490,641
- Issue date Nov 26, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate contact structure above an active region...
- Patent number 10,483,363
- Issue date Nov 19, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fin formation with a self-aligned directed self-assembly...
- Patent number 10,475,660
- Issue date Nov 12, 2019
- International Business Machines Corporation
- Cheng Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors with self aligned gate and source...
- Patent number 10,461,174
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Cheng Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with robust source/drain isolation from substrate
- Patent number 10,431,651
- Issue date Oct 1, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION F...
- Publication number 20240201583
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Cheng Chi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FLEXIBLE CELL BOUNDARY WITH CURVED GATE CUT REGION
- Publication number 20240072035
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITOR (MIMCAP)-BASED PHYSICALLY UNCLONABL...
- Publication number 20240006346
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Cheng Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH
- Publication number 20230422461
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC TUNING OF NEGATIVE CAPACITANCE IN DUAL CHANNEL FIELD EFF...
- Publication number 20230282523
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MACHINE LEARNING FOR COMPUTATIONAL PATTERNING
- Publication number 20230206112
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Cheng Chi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NANOSHEET TRANSISTOR DEVICES WITH DIFFERENT ACTIVE CHANNEL WIDTHS
- Publication number 20230123883
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC AND PARAELECTRIC STACK CAPACITORS
- Publication number 20230103003
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RANDOM WEIGHT INITIALIZATION OF NON-VOLATILE MEMORY ARRAY
- Publication number 20230094719
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Cheng Chi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
GATE CONTACT INSIDE GATE CUT TRENCH
- Publication number 20230093462
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR
- Publication number 20220392995
- Publication date Dec 8, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE WITH REDUCED PROGRAMMING VOLTAGE
- Publication number 20220293853
- Publication date Sep 15, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) DEVICES
- Publication number 20220209018
- Publication date Jun 30, 2022
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CAPACITANCE LOW RC WRAP-AROUND-CONTACT
- Publication number 20220199787
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NCFETS WITH COMPLIMENTARY CAPACITANCE MATCHING USING STACKED N-TYPE...
- Publication number 20220190167
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH
- Publication number 20220181252
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE DRIFT MITIGATION IN NON-VOLATILE MEMORY CELL
- Publication number 20220173312
- Publication date Jun 2, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20220158091
- Publication date May 19, 2022
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20220158092
- Publication date May 19, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELF-ALIGNED TOP VIA STRUCTURE
- Publication number 20210225705
- Publication date Jul 22, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL RESISTIVE MEMORY DEVICE WITH EMBEDDED SELECTORS
- Publication number 20210167128
- Publication date Jun 3, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICES WITH IMPROVED ELECTROSTATIC INTEGRITY
- Publication number 20210151565
- Publication date May 20, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICES WITH IMPROVED ELECTROSTATIC INTEGRITY
- Publication number 20200343342
- Publication date Oct 29, 2020
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT OVER ACTIVE REGION WITH SELF-ALIGNED SOURCE/DRAIN CONTACT
- Publication number 20200321244
- Publication date Oct 8, 2020
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM BOTTOM SPACER FOR VFET DEVICES
- Publication number 20200194587
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM BOTTOM SPACER FOR VFET DEVICES
- Publication number 20200027983
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Steven Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH ROBUST SOURCE/DRAIN ISOLATION FROM SUBSTRATE
- Publication number 20200006476
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE FOR A TRANSISTOR DEVICE
- Publication number 20190386107
- Publication date Dec 19, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE FOR A TRANSISTOR
- Publication number 20190378900
- Publication date Dec 12, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A COMBINATION OF LONG CHANNEL DEVICES AND VERTICAL TRANSPOR...
- Publication number 20190341489
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Cheng Chi
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Random weight initialization of non-volatile memory array

Decoupling capacitor inside gate cut trench

Ferroelectric and paraelectric stack capacitors

Gate contact inside gate cut trench

Multilayer dielectric for metal-insulator-metal capacitor

Gate contact structure for a transistor device

Phase-change memory device with reduced programming voltage

Field effect transistor (FET) devices

Low capacitance low RC wrap-around-contact

Resistive switching memory cell

Resistive switching memory cell

Resistance drift mitigation in non-volatile memory cell

NCFETS with complimentary capacitance matching using stacked n-type...

Vertical resistive memory device with embedded selectors

Self-aligned top via structure

Nanosheet devices with improved electrostatic integrity

Uniform bottom spacer for VFET devices

Gate contact over active region with self-aligned source/drain contact

Semiconductor devices having equal thickness gate spacers

Gate contact structure for a transistor

Techniques for VFET top source/drain epitaxy

Method of concurrently forming source/drain and gate contacts and r...

Nanosheet transistor with robust source/drain isolation from substrate

Uniform bottom spacer for VFET devices

Self-aligned finFET formation

Methods of forming a gate contact structure for a transistor

Methods of forming a gate contact structure above an active region...

Method for fin formation with a self-aligned directed self-assembly...

Vertical field effect transistors with self aligned gate and source...

Nanosheet transistor with robust source/drain isolation from substrate

Patents Applicationslast 30 patents

PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION F...

FLEXIBLE CELL BOUNDARY WITH CURVED GATE CUT REGION

METAL-INSULATOR-METAL CAPACITOR (MIMCAP)-BASED PHYSICALLY UNCLONABL...

DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH

DIELECTRIC TUNING OF NEGATIVE CAPACITANCE IN DUAL CHANNEL FIELD EFF...

MACHINE LEARNING FOR COMPUTATIONAL PATTERNING

NANOSHEET TRANSISTOR DEVICES WITH DIFFERENT ACTIVE CHANNEL WIDTHS

FERROELECTRIC AND PARAELECTRIC STACK CAPACITORS

RANDOM WEIGHT INITIALIZATION OF NON-VOLATILE MEMORY ARRAY

GATE CONTACT INSIDE GATE CUT TRENCH

MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR

PHASE-CHANGE MEMORY DEVICE WITH REDUCED PROGRAMMING VOLTAGE

FIELD EFFECT TRANSISTOR (FET) DEVICES

LOW CAPACITANCE LOW RC WRAP-AROUND-CONTACT

NCFETS WITH COMPLIMENTARY CAPACITANCE MATCHING USING STACKED N-TYPE...

DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH

RESISTANCE DRIFT MITIGATION IN NON-VOLATILE MEMORY CELL

RESISTIVE SWITCHING MEMORY CELL

RESISTIVE SWITCHING MEMORY CELL

SELF-ALIGNED TOP VIA STRUCTURE

VERTICAL RESISTIVE MEMORY DEVICE WITH EMBEDDED SELECTORS

NANOSHEET DEVICES WITH IMPROVED ELECTROSTATIC INTEGRITY

NANOSHEET DEVICES WITH IMPROVED ELECTROSTATIC INTEGRITY

GATE CONTACT OVER ACTIVE REGION WITH SELF-ALIGNED SOURCE/DRAIN CONTACT

UNIFORM BOTTOM SPACER FOR VFET DEVICES

UNIFORM BOTTOM SPACER FOR VFET DEVICES

NANOSHEET TRANSISTOR WITH ROBUST SOURCE/DRAIN ISOLATION FROM SUBSTRATE

GATE CONTACT STRUCTURE FOR A TRANSISTOR DEVICE

GATE CONTACT STRUCTURE FOR A TRANSISTOR

FORMING A COMBINATION OF LONG CHANNEL DEVICES AND VERTICAL TRANSPOR...