Cheng Gan

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitor structure and method of forming the same
- Patent number 12,136,449
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Peripheral circuit having recess gate transistors and method for fo...
- Patent number 12,089,413
- Issue date Sep 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
Capacitor structure and method of forming the same
- Patent number 11,887,646
- Issue date Jan 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for isolation of bit-line drivers for a three-...
- Patent number 11,538,780
- Issue date Dec 27, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for forming capacitors for a three-dimensional...
- Patent number 11,437,464
- Issue date Sep 6, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local word line driver device, memory device, and fabrication metho...
- Patent number 11,270,770
- Issue date Mar 8, 2022
- Yangtze Memory Technologies Co., Ltd.
- Cheng Gan
- G11 - INFORMATION STORAGE
Information Patent Grant
Backside deep isolation structures for semiconductor device arrays
- Patent number 11,264,455
- Issue date Mar 1, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure and method of forming the same
- Patent number 11,232,825
- Issue date Jan 25, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with backside isolation structures
- Patent number 11,177,343
- Issue date Nov 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Cheng Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with deep isolation structures
- Patent number 11,031,282
- Issue date Jun 8, 2021
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...
- Publication number 20240389331
- Publication date Nov 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Yanwei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20230124602
- Publication date Apr 20, 2023
- Yangtze Memory Technologies Co., Ltd.
- Xin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD FOR ISOLATION OF BIT-LINE DRIVERS FOR A THREE-...
- Publication number 20230078865
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...
- Publication number 20230005946
- Publication date Jan 5, 2023
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Yanwei Shi
- G11 - INFORMATION STORAGE
Information Patent Application
PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...
- Publication number 20230005875
- Publication date Jan 5, 2023
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Yanwei Shi
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD FOR ISOLATION OF BIT-LINE DRIVERS FOR A THREE-...
- Publication number 20220328441
- Publication date Oct 13, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING CAPACITORS FOR A THREE-DIMENSIONAL...
- Publication number 20220208960
- Publication date Jun 30, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20220101906
- Publication date Mar 31, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20220059152
- Publication date Feb 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
LOCAL WORD LINE DRIVER DEVICE, MEMORY DEVICE, AND FABRICATION METHO...
- Publication number 20210166762
- Publication date Jun 3, 2021
- Yangtze Memory Technologies Co., Ltd.
- Cheng GAN
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH BACKSIDE ISOLATION STRUCTURES
- Publication number 20210118988
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Cheng Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE DEEP ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICE ARRAYS
- Publication number 20210118989
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Wei LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR ISOLATION OF BIT-LINE DRIVERS FOR A THREE-...
- Publication number 20210111137
- Publication date Apr 15, 2021
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DEEP ISOLATION STRUCTURES
- Publication number 20210013088
- Publication date Jan 14, 2021
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING CAPACITORS FOR A THREE-DIMENSIONAL...
- Publication number 20210013303
- Publication date Jan 14, 2021
- Yangtze Memory Technologies Co., Ltd.
- Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20200265886
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Capacitor structure and method of forming the same

Peripheral circuit having recess gate transistors and method for fo...

Capacitor structure and method of forming the same

Structure and method for isolation of bit-line drivers for a three-...

Structure and method for forming capacitors for a three-dimensional...

Local word line driver device, memory device, and fabrication metho...

Backside deep isolation structures for semiconductor device arrays

Capacitor structure and method of forming the same

Three-dimensional memory devices with backside isolation structures

Three-dimensional memory devices with deep isolation structures

Patents Applicationslast 30 patents

PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...

SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREFOR

STRUCTURE AND METHOD FOR ISOLATION OF BIT-LINE DRIVERS FOR A THREE-...

PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...

PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FO...

STRUCTURE AND METHOD FOR ISOLATION OF BIT-LINE DRIVERS FOR A THREE-...

STRUCTURE AND METHOD FOR FORMING CAPACITORS FOR A THREE-DIMENSIONAL...

NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME

NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME

LOCAL WORD LINE DRIVER DEVICE, MEMORY DEVICE, AND FABRICATION METHO...

THREE-DIMENSIONAL MEMORY DEVICES WITH BACKSIDE ISOLATION STRUCTURES

BACKSIDE DEEP ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICE ARRAYS

STRUCTURE AND METHOD FOR ISOLATION OF BIT-LINE DRIVERS FOR A THREE-...

THREE-DIMENSIONAL MEMORY DEVICES WITH DEEP ISOLATION STRUCTURES

STRUCTURE AND METHOD FOR FORMING CAPACITORS FOR A THREE-DIMENSIONAL...

NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME