Cheng T. Horng

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction for MRAM applications
- Patent number 9,455,400
- Issue date Sep 27, 2016
- Headway Technologies, Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method to fabricate high performance MTJ devices for...
- Patent number 9,331,271
- Issue date May 3, 2016
- Headway Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction for MRAM applications
- Patent number 9,224,940
- Issue date Dec 29, 2015
- Headway Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic element with improved out-of-plane anisotropy for spintron...
- Patent number 9,006,704
- Issue date Apr 14, 2015
- Headway Technologies, Inc.
- Guenole Jan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bottom electrode for MRAM device
- Patent number 8,969,982
- Issue date Mar 3, 2015
- Headway Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin torque transfer magnetic tunnel junction fabricated with a com...
- Patent number 8,823,118
- Issue date Sep 2, 2014
- Headway Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction for MRAM applications
- Patent number 8,786,036
- Issue date Jul 22, 2014
- Headway Technologies, Inc.
- Wei Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance MTJ element for conventional MRAM and for STT-RAM...
- Patent number 8,749,003
- Issue date Jun 10, 2014
- Headway Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a spin-transfer torque random access memory (STT-...
- Patent number 8,726,491
- Issue date May 20, 2014
- Headway Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Grant
Underlayer for high performance magnetic tunneling junction MRAM
- Patent number 8,673,654
- Issue date Mar 18, 2014
- Headway Technologies, Inc.
- Liubo Hong
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure and method to fabricate high performance MTJ devices for...
- Patent number 8,609,262
- Issue date Dec 17, 2013
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Array of magnetic tunneling junction film structures with process d...
- Patent number 8,525,280
- Issue date Sep 3, 2013
- Headway Technologies, Inc.
- Tai Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure and method for enhancing interfacial perpendicular anisot...
- Patent number 8,470,462
- Issue date Jun 25, 2013
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizatio...
- Patent number 8,456,893
- Issue date Jun 4, 2013
- MagIC Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance MTJ elements for STT-RAM and method for making the...
- Patent number 8,436,437
- Issue date May 7, 2013
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low switching current dual spin filter (DSF) element for STT-RAM an...
- Patent number 8,404,367
- Issue date Mar 26, 2013
- MagIC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Grant
Capping layer for a magnetic tunnel junction device to enhance dR/R...
- Patent number 8,378,330
- Issue date Feb 19, 2013
- Headway Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High performance MTJ element for conventional MRAM and for STT-RAM...
- Patent number 8,372,661
- Issue date Feb 12, 2013
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process to fabricate bottom electrode for MRAM device
- Patent number 8,273,666
- Issue date Sep 25, 2012
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer MRAM device with novel magnetic synthetic free layer
- Patent number 8,268,641
- Issue date Sep 18, 2012
- MagIC Technologies, Inc.
- Yimin Guo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton...
- Patent number 8,269,292
- Issue date Sep 18, 2012
- MagIC Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MTJ incorporating CoFe/Ni multilayer film with perpendicular magnet...
- Patent number 8,184,411
- Issue date May 22, 2012
- Headway Technologies, Inc.
- Kunliang Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MRAM with storage layer and super-paramagnetic sensing layer
- Patent number 8,178,363
- Issue date May 15, 2012
- MagIC Technologies, Inc.
- Po-Kang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a magnetic tunnel junction (MTJ) device
- Patent number 8,176,622
- Issue date May 15, 2012
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Structure and method to fabricate high performance MTJ devices for...
- Patent number 8,138,561
- Issue date Mar 20, 2012
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High performance MTJ element for STT-RAM and method for making the...
- Patent number 8,080,432
- Issue date Dec 20, 2011
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MRAM with storage layer and super-paramagnetic sensing layer
- Patent number 8,062,909
- Issue date Nov 22, 2011
- MagIC Technologies, Inc.
- Po-Kang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low switching current dual spin filter (DSF) element for STT-RAM an...
- Patent number 8,057,925
- Issue date Nov 15, 2011
- MagIC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Grant
High performance MTJ element for STT-RAM and method for making the...
- Patent number 8,058,698
- Issue date Nov 15, 2011
- MagIC Technologies, Inc.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin transfer MRAM device with novel magnetic synthetic free layer
- Patent number 8,058,697
- Issue date Nov 15, 2011
- MagIC Technologies, Inc.
- Yimin Guo
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Tunnel Junction for MRAM Applications
- Publication number 20160211442
- Publication date Jul 21, 2016
- HEADWAY TECHNOLOGIES, INC.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction for MRAM Applications
- Publication number 20140306305
- Publication date Oct 16, 2014
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
Structure and Method to Fabricate High Performance MTJ Devices for...
- Publication number 20140099735
- Publication date Apr 10, 2014
- MAGIC TECHNOLOGIES, INC.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Application
Spin Torque Transfer Magnetic Tunnel Junction Fabricated with a Com...
- Publication number 20130175644
- Publication date Jul 11, 2013
- HEADWAY TECHNOLOGIES, INC.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Application
High Performance MTJ Element for Conventional MRAM and for STT-RAM...
- Publication number 20130154038
- Publication date Jun 20, 2013
- MAGIC TECHNOLOGIES, INC.
- Cheng T. Horng
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic element with improved out-of-plane anisotropy for spintron...
- Publication number 20120205758
- Publication date Aug 16, 2012
- MagIC Technologies, Inc.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction for MRAM applications
- Publication number 20120181537
- Publication date Jul 19, 2012
- MagIC Technologies Inc.
- Wei Cao
- G11 - INFORMATION STORAGE
Information Patent Application
Structure and method for enhancing interfacial perpendicular anisot...
- Publication number 20120135273
- Publication date May 31, 2012
- MagIC Technologies, Inc.
- Cheng T. Horng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Spin transfer MRAM device with novel magnetic synthetic free layer
- Publication number 20120064640
- Publication date Mar 15, 2012
- MagIC Technologies, Inc.
- Yimin Guo
- G01 - MEASURING TESTING
Information Patent Application
MRAM with storage layer and super-paramagnetic sensing layer
- Publication number 20120058574
- Publication date Mar 8, 2012
- Po-Kang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low switching current dual spin filter (DSF) element for STT-RAM an...
- Publication number 20120058575
- Publication date Mar 8, 2012
- Cheng T. Horng
- G01 - MEASURING TESTING
Information Patent Application
Low switching current dual spin filter (DSF) element for STT-RAM an...
- Publication number 20120040207
- Publication date Feb 16, 2012
- Cheng T. Horng
- G01 - MEASURING TESTING
Information Patent Application
Array of magnetic tunneling junction film structures with process d...
- Publication number 20110284977
- Publication date Nov 24, 2011
- HEADWAY TECHNOLOGIES, INC.
- Tai Min
- G11 - INFORMATION STORAGE
Information Patent Application
Bottom electrode for MRAM device
- Publication number 20110133300
- Publication date Jun 9, 2011
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ incorporating CoFe/Ni multilayer film with perpendicular magnet...
- Publication number 20110096443
- Publication date Apr 28, 2011
- HEADWAY TECHNOLOGIES, INC.
- Kunliang Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Process to fabricate bottom electrode for MRAM device
- Publication number 20110076785
- Publication date Mar 31, 2011
- MagIC Technologies, Inc.
- Rongfu Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method to fabricate high performance MTJ devices for...
- Publication number 20110014500
- Publication date Jan 20, 2011
- MaglC Technologies, Inc.
- Cheng T. Horng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
High performance MTJ element for STT-RAM and method for making the...
- Publication number 20100261295
- Publication date Oct 14, 2010
- MagIC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
High performance MTJ element for STT-RAM and method for making the...
- Publication number 20100258888
- Publication date Oct 14, 2010
- MagIC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
High performance MTJ elements for STT-RAM and method for making the...
- Publication number 20100258889
- Publication date Oct 14, 2010
- MagIC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
NOVEL FREE LAYER/CAPPING LAYER FOR HIGH PERFORMANCE MRAM MTJ
- Publication number 20100176470
- Publication date Jul 15, 2010
- MagIC Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM with storage layer and super-paramagnetic sensing layer
- Publication number 20100178715
- Publication date Jul 15, 2010
- MagIC Technologies, Inc.
- Po-Kang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM with storage layer and super-paramagnetic sensing layer
- Publication number 20100176429
- Publication date Jul 15, 2010
- MagIC Technologies, Inc.
- Po-Kang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hafnium doped cap and free layer for mram device
- Publication number 20100136713
- Publication date Jun 3, 2010
- MaglC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
Structure and method to fabricate high performance MTJ devices for...
- Publication number 20100065935
- Publication date Mar 18, 2010
- MagIC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE
Information Patent Application
Novel underlayer for high performance magnetic tunneling junction MRAM
- Publication number 20100047929
- Publication date Feb 25, 2010
- HEADWAY TECHNOLOGIES, INC.
- Liubo Hong
- G01 - MEASURING TESTING
Information Patent Application
Novel underlayer for high performance magnetic tunneling junction MRAM
- Publication number 20100044680
- Publication date Feb 25, 2010
- LIUBO HONG
- G01 - MEASURING TESTING
Information Patent Application
Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnet...
- Publication number 20100006960
- Publication date Jan 14, 2010
- MagIC Technologies, Inc.
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnet...
- Publication number 20100009467
- Publication date Jan 14, 2010
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel capping layer for a magnetic tunnel junction device to enhanc...
- Publication number 20090325319
- Publication date Dec 31, 2009
- MagIC Technologies, Inc.
- Cheng T. Horng
- G11 - INFORMATION STORAGE

Cheng T. Horng

Person

Patents Grantslast 30 patents

Magnetic tunnel junction for MRAM applications

Structure and method to fabricate high performance MTJ devices for...

Magnetic tunnel junction for MRAM applications

Magnetic element with improved out-of-plane anisotropy for spintron...

Bottom electrode for MRAM device

Spin torque transfer magnetic tunnel junction fabricated with a com...

Magnetic tunnel junction for MRAM applications

High performance MTJ element for conventional MRAM and for STT-RAM...

Method of forming a spin-transfer torque random access memory (STT-...

Underlayer for high performance magnetic tunneling junction MRAM

Structure and method to fabricate high performance MTJ devices for...

Array of magnetic tunneling junction film structures with process d...

Structure and method for enhancing interfacial perpendicular anisot...

Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizatio...

High performance MTJ elements for STT-RAM and method for making the...

Low switching current dual spin filter (DSF) element for STT-RAM an...

Capping layer for a magnetic tunnel junction device to enhance dR/R...

High performance MTJ element for conventional MRAM and for STT-RAM...

Process to fabricate bottom electrode for MRAM device

Spin transfer MRAM device with novel magnetic synthetic free layer

Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton...

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnet...

MRAM with storage layer and super-paramagnetic sensing layer

Process for manufacturing a magnetic tunnel junction (MTJ) device

Structure and method to fabricate high performance MTJ devices for...

High performance MTJ element for STT-RAM and method for making the...

MRAM with storage layer and super-paramagnetic sensing layer

Low switching current dual spin filter (DSF) element for STT-RAM an...

High performance MTJ element for STT-RAM and method for making the...

Spin transfer MRAM device with novel magnetic synthetic free layer

Patents Applicationslast 30 patents

Magnetic Tunnel Junction for MRAM Applications

Magnetic Tunnel Junction for MRAM Applications

Structure and Method to Fabricate High Performance MTJ Devices for...

Spin Torque Transfer Magnetic Tunnel Junction Fabricated with a Com...

High Performance MTJ Element for Conventional MRAM and for STT-RAM...

Magnetic element with improved out-of-plane anisotropy for spintron...

Magnetic Tunnel Junction for MRAM applications

Structure and method for enhancing interfacial perpendicular anisot...

Spin transfer MRAM device with novel magnetic synthetic free layer

MRAM with storage layer and super-paramagnetic sensing layer

Low switching current dual spin filter (DSF) element for STT-RAM an...

Low switching current dual spin filter (DSF) element for STT-RAM an...

Array of magnetic tunneling junction film structures with process d...

Bottom electrode for MRAM device

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnet...

Process to fabricate bottom electrode for MRAM device

Structure and method to fabricate high performance MTJ devices for...

High performance MTJ element for STT-RAM and method for making the...

High performance MTJ element for STT-RAM and method for making the...

High performance MTJ elements for STT-RAM and method for making the...

NOVEL FREE LAYER/CAPPING LAYER FOR HIGH PERFORMANCE MRAM MTJ

MRAM with storage layer and super-paramagnetic sensing layer

MRAM with storage layer and super-paramagnetic sensing layer

Hafnium doped cap and free layer for mram device

Structure and method to fabricate high performance MTJ devices for...

Novel underlayer for high performance magnetic tunneling junction MRAM

Novel underlayer for high performance magnetic tunneling junction MRAM

Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnet...

Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnet...

Novel capping layer for a magnetic tunnel junction device to enhanc...