CHENGLONG ZHANG

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and formation method thereof
- Patent number 10,804,135
- Issue date Oct 13, 2020
- Semiconductor Manufacturing (Shanghai) International Corporation
- Zhang Chenglong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure and associated method for flash memory
- Patent number 10,763,169
- Issue date Sep 1, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 10,410,920
- Issue date Sep 10, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures
- Patent number 10,396,032
- Issue date Aug 27, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure and associated method for flash memory
- Patent number 10,242,910
- Issue date Mar 26, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having contact holes between sidewall spacers
- Patent number 10,134,639
- Issue date Nov 20, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having interconnect structure
- Patent number 10,090,155
- Issue date Oct 2, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiyang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 9,978,641
- Issue date May 22, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and method for forming the same
- Patent number 9,892,921
- Issue date Feb 13, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Qiyang He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to thin down indium phosphide layer
- Patent number 9,831,313
- Issue date Nov 28, 2017
- Semiconductor Manufacturing International (Beijing) Corporation
- Haiyang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having contact holes between sidewall space...
- Patent number 9,799,564
- Issue date Oct 24, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and fabrication method thereof
- Patent number 9,793,209
- Issue date Oct 17, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor
- Patent number 9,755,080
- Issue date Sep 5, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiyang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of interconnect structure
- Patent number 9,754,799
- Issue date Sep 5, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 9,613,880
- Issue date Apr 4, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Chenglong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and fabrication method thereof
- Patent number 9,564,512
- Issue date Feb 7, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiyang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitive pressure sensors
- Patent number 9,541,463
- Issue date Jan 10, 2017
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiyang He
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor structures and fabrication methods thereof
- Patent number 9,524,933
- Issue date Dec 20, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiyang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having reduced pad peeling during tensile stress testing and...
- Patent number 9,396,993
- Issue date Jul 19, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinpeng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitive pressure sensors and fabrication methods thereof
- Patent number 9,207,138
- Issue date Dec 8, 2015
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiyang He
- B81 - MICRO-STRUCTURAL TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
CONTACT STRUCTURE AND ASSOCIATED METHOD FOR FLASH MEMORY
- Publication number 20190189511
- Publication date Jun 20, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20180247867
- Publication date Aug 30, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING INTERCONNECT STRUCTURE
- Publication number 20180130660
- Publication date May 10, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- GIYANG HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES
- Publication number 20180012842
- Publication date Jan 11, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE AND ASSOCIATED METHOD FOR FLASH MEMORY
- Publication number 20180005886
- Publication date Jan 4, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING CONTACT HOLES BETWEEN SIDEWALL SPACERS
- Publication number 20180005894
- Publication date Jan 4, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR
- Publication number 20170084747
- Publication date Mar 23, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- HAIYANG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO THIN DOWN INDIUM PHOSPHIDE LAYER
- Publication number 20170062571
- Publication date Mar 2, 2017
- Semiconductor Manufacturing International (Beijing) Corporation
- HAIYANG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20160293727
- Publication date Oct 6, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- HAIYANG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20160284594
- Publication date Sep 29, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20160276283
- Publication date Sep 22, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20160163636
- Publication date Jun 9, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF
- Publication number 20160118338
- Publication date Apr 28, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- HAIYANG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20160111329
- Publication date Apr 21, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF
- Publication number 20160111368
- Publication date Apr 21, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- CHENGLONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITIVE PRESSURE SENSORS
- Publication number 20160054189
- Publication date Feb 25, 2016
- Semiconductor Manufacturing International (Beijing) Corporation
- QIYANG HE
- G01 - MEASURING TESTING
Information Patent Application
INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20150187601
- Publication date Jul 2, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIYANG HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITIVE PRESSURE SENSORS AND FABRICATION METHODS THEREOF
- Publication number 20150061047
- Publication date Mar 5, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- QIYANG HE
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
DEVICE HAVING REDUCED PAD PEELING DURING TENSILE STRESS TESTING AND...
- Publication number 20140374911
- Publication date Dec 25, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xinpeng WANG
- H01 - BASIC ELECTRIC ELEMENTS

CHENGLONG ZHANG

Person

Patents Grantslast 30 patents

Semiconductor structure and formation method thereof

Contact structure and associated method for flash memory

Semiconductor structure and fabrication method thereof

Semiconductor structures

Contact structure and associated method for flash memory

Semiconductor structure having contact holes between sidewall spacers

Semiconductor device having interconnect structure

Semiconductor structure and fabrication method thereof

Interconnect structure and method for forming the same

Method to thin down indium phosphide layer

Semiconductor structure having contact holes between sidewall space...

Semiconductor structures and fabrication method thereof

Fin field-effect transistor

Fabrication method of interconnect structure

Semiconductor structure and fabrication method thereof

Fin field-effect transistor and fabrication method thereof

Capacitive pressure sensors

Semiconductor structures and fabrication methods thereof

Device having reduced pad peeling during tensile stress testing and...

Capacitive pressure sensors and fabrication methods thereof

Patents Applicationslast 30 patents

CONTACT STRUCTURE AND ASSOCIATED METHOD FOR FLASH MEMORY

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING INTERCONNECT STRUCTURE

SEMICONDUCTOR STRUCTURES

CONTACT STRUCTURE AND ASSOCIATED METHOD FOR FLASH MEMORY

SEMICONDUCTOR STRUCTURE HAVING CONTACT HOLES BETWEEN SIDEWALL SPACERS

FIN FIELD-EFFECT TRANSISTOR

METHOD TO THIN DOWN INDIUM PHOSPHIDE LAYER

FIN FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF

INTERCONNECT STRUCTURE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF

CAPACITIVE PRESSURE SENSORS

INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME

CAPACITIVE PRESSURE SENSORS AND FABRICATION METHODS THEREOF

DEVICE HAVING REDUCED PAD PEELING DURING TENSILE STRESS TESTING AND...