Chenming Hu

Person

Oakland, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three dimensional integrated circuit and fabrication thereof
- Patent number 12,057,447
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional integrated circuit and fabrication thereof
- Patent number 11,784,119
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory circuit and manufacturing method thereof
- Patent number 11,631,447
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Xiang You
- G11 - INFORMATION STORAGE
Information Patent Grant
Epitaxial monocrystalline channel for storage transistors in 3-dime...
- Patent number 11,557,606
- Issue date Jan 17, 2023
- SUNRISE MEMORY CORPORATION
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional integrated circuit and fabrication thereof
- Patent number 11,476,248
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having semiconductor alloy layer adjacent a ga...
- Patent number 11,380,762
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial monocrystalline channel for storage transistors in 3-dime...
- Patent number 11,049,873
- Issue date Jun 29, 2021
- SUNRISE MEMORY CORPORATION
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicided source/drain region
- Patent number 10,818,754
- Issue date Oct 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt silicidation process for substrates comprised with a silicon...
- Patent number 10,446,646
- Issue date Oct 15, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D transistor having a gate stack including a ferroelectric film
- Patent number 10,374,086
- Issue date Aug 6, 2019
- The Regents of the University of California
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt silicidation process for substrates comprised with a silicon...
- Patent number 9,673,280
- Issue date Jun 6, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling transistor suitable for low voltage operation
- Patent number 9,117,893
- Issue date Aug 25, 2015
- The Regents of the University of California
- Chenming Hu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Relaxed silicon germanium substrate with low defect density
- Patent number 8,564,018
- Issue date Oct 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Chich Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling transistor suitable for low voltage operation
- Patent number 8,384,122
- Issue date Feb 26, 2013
- The Regents of the University of California
- Chenming Hu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High performance CMOS devices and methods for making same
- Patent number 8,067,280
- Issue date Nov 29, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel transistor structure with lattice-mismatched zone...
- Patent number 8,062,946
- Issue date Nov 22, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having selective silicide-induced stress an...
- Patent number 7,875,959
- Issue date Jan 25, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hu Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum-based interconnection in bond pad layer
- Patent number 7,652,378
- Issue date Jan 26, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Horng-Huei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode for a semiconductor fin device
- Patent number 7,635,632
- Issue date Dec 22, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial replacement silicide gate
- Patent number 7,498,641
- Issue date Mar 3, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nano-wire devices and methods of fabrication
- Patent number 7,452,778
- Issue date Nov 18, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum based conductor for via fill and interconnect
- Patent number 7,452,805
- Issue date Nov 18, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed silicon germanium substrate with low defect density
- Patent number 7,357,838
- Issue date Apr 15, 2008
- Taiwan Semiconductor Manufacturing Company
- Chun Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon MOS devices
- Patent number 7,342,289
- Issue date Mar 11, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high-k gate dielectric and quasi-metal ga...
- Patent number 7,279,756
- Issue date Oct 9, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect with composite layers and method for fabricating the same
- Patent number 7,265,447
- Issue date Sep 4, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS logic gate fabricated on hybrid crystal orientations and metho...
- Patent number 7,208,815
- Issue date Apr 24, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance tunneling-biased MOSFET and a process for its manu...
- Patent number 7,187,000
- Issue date Mar 6, 2007
- Taiwan Semiconductor Manufacturing Company, Inc.
- Kuo-Nan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode for a semiconductor fin device
- Patent number 7,176,092
- Issue date Feb 13, 2007
- Taiwan Semiconductor Manufacturing Company
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid fractional-bit systems
- Patent number 7,167,109
- Issue date Jan 23, 2007
- Chenming Hu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT WITH POLYCRYSTALLINE STRUCTURE
- Publication number 20240355816
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240347340
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Jui CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240332013
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Liang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
- Publication number 20230411388
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
- Publication number 20230378056
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230327007
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Jui CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230023186
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiung-Yuan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING TWO-DIMENSIONAL SEMICONDUCTOR CHANNELS
- Publication number 20230008409
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen Han CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SRAM MEMORY CIRCUIT
- Publication number 20220366959
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Xiang YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
- Publication number 20220367445
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
- Publication number 20220319982
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Monocrystalline Channel for Storage Transistors in 3-Dime...
- Publication number 20210280605
- Publication date Sep 9, 2021
- SUNRISE MEMORY CORPORATION
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF
- Publication number 20210202475
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chenming HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CIRCUIT AND MANUFACTURING METHOD THEREOF
- Publication number 20210028178
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Xiang YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Monocrystalline Channel for Storage Transistors in 3-Dime...
- Publication number 20200098789
- Publication date Mar 26, 2020
- SUNRISE MEMORY CORPORATION
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES HAVING A SILICON-GERMANIUM LAYER
- Publication number 20200044030
- Publication date Feb 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SILICIDED SOURCE/DRAIN REGION
- Publication number 20180197955
- Publication date Jul 12, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt Silicidation Process for Substrates Comprised with a Silicon...
- Publication number 20170271449
- Publication date Sep 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D TRANSISTOR HAVING A GATE STACK INCLUDING A FERROELECTRIC FILM
- Publication number 20170162702
- Publication date Jun 8, 2017
- The Regents of the University of California
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt silicidation process for substrates comprised with a silicon...
- Publication number 20160240372
- Publication date Aug 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE CMOS DEVICES AND METHODS FOR MAKING SAME
- Publication number 20080305590
- Publication date Dec 11, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Aluminum-based interconnection in bond pad layer
- Publication number 20080185724
- Publication date Aug 7, 2008
- Horng-Huei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELAXED SILICON GERMANIUM SUBSTRATE WITH LOW DEFECT DENSITY
- Publication number 20080142842
- Publication date Jun 19, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Chich Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alluminum base conductor for via fill interconnect
- Publication number 20070218686
- Publication date Sep 20, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt silicidation process for substrates comprised with a silicon...
- Publication number 20070164369
- Publication date Jul 19, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate electrode for a semiconductor fin device
- Publication number 20070111454
- Publication date May 17, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Necked Finfet device
- Publication number 20070063261
- Publication date Mar 22, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Haur-Ywh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure having selective silicide-induced stress an...
- Publication number 20070045849
- Publication date Mar 1, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hu Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID FRACTIONAL-BIT SYSTEMS
- Publication number 20060227021
- Publication date Oct 12, 2006
- Chenming HU
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
High performance tunneling-biased MOSFET and a process for its manu...
- Publication number 20060208316
- Publication date Sep 21, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Nan Yang
- H01 - BASIC ELECTRIC ELEMENTS

Chenming Hu

Person

Patents Grantslast 30 patents

Three dimensional integrated circuit and fabrication thereof

Three dimensional integrated circuit and fabrication thereof

Memory circuit and manufacturing method thereof

Epitaxial monocrystalline channel for storage transistors in 3-dime...

Three dimensional integrated circuit and fabrication thereof

Semiconductor device having semiconductor alloy layer adjacent a ga...

Epitaxial monocrystalline channel for storage transistors in 3-dime...

Semiconductor device with silicided source/drain region

Cobalt silicidation process for substrates comprised with a silicon...

3D transistor having a gate stack including a ferroelectric film

Cobalt silicidation process for substrates comprised with a silicon...

Tunneling transistor suitable for low voltage operation

Relaxed silicon germanium substrate with low defect density

Tunneling transistor suitable for low voltage operation

High performance CMOS devices and methods for making same

Strained channel transistor structure with lattice-mismatched zone...

Semiconductor structure having selective silicide-induced stress an...

Aluminum-based interconnection in bond pad layer

Gate electrode for a semiconductor fin device

Partial replacement silicide gate

Semiconductor nano-wire devices and methods of fabrication

Aluminum based conductor for via fill and interconnect

Relaxed silicon germanium substrate with low defect density

Strained silicon MOS devices

Semiconductor device with high-k gate dielectric and quasi-metal ga...

Interconnect with composite layers and method for fabricating the same

CMOS logic gate fabricated on hybrid crystal orientations and metho...

High performance tunneling-biased MOSFET and a process for its manu...

Gate electrode for a semiconductor fin device

Hybrid fractional-bit systems

Patents Applicationslast 30 patents

THREE DIMENSIONAL INTEGRATED CIRCUIT WITH POLYCRYSTALLINE STRUCTURE

EPITAXIAL STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

TRANSISTORS HAVING TWO-DIMENSIONAL SEMICONDUCTOR CHANNELS

METHOD FOR MANUFACTURING SRAM MEMORY CIRCUIT

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

Epitaxial Monocrystalline Channel for Storage Transistors in 3-Dime...

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

MEMORY CIRCUIT AND MANUFACTURING METHOD THEREOF

Epitaxial Monocrystalline Channel for Storage Transistors in 3-Dime...

DEVICES HAVING A SILICON-GERMANIUM LAYER

SEMICONDUCTOR DEVICE WITH SILICIDED SOURCE/DRAIN REGION

Cobalt Silicidation Process for Substrates Comprised with a Silicon...

3D TRANSISTOR HAVING A GATE STACK INCLUDING A FERROELECTRIC FILM

Cobalt silicidation process for substrates comprised with a silicon...

HIGH PERFORMANCE CMOS DEVICES AND METHODS FOR MAKING SAME

Aluminum-based interconnection in bond pad layer

RELAXED SILICON GERMANIUM SUBSTRATE WITH LOW DEFECT DENSITY

Alluminum base conductor for via fill interconnect

Cobalt silicidation process for substrates comprised with a silicon...

Gate electrode for a semiconductor fin device

Necked Finfet device

Semiconductor structure having selective silicide-induced stress an...

HYBRID FRACTIONAL-BIT SYSTEMS

High performance tunneling-biased MOSFET and a process for its manu...