Chi-Yuan Wen

Person

Tainan, TW

People

Patents Grantslast 30 patents

Information Patent Grant
LDMOS device having isolation regions comprising DTI regions extend...
- Patent number 12,368,070
- Issue date Jul 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
QE approach by double-side, multi absorption structure
- Patent number 11,393,937
- Issue date Jul 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor device with reflective layer
- Patent number 11,342,372
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
QE approach by double-side, multi absorption structure
- Patent number 10,879,406
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,784,150
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ching-Chung Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming image sensor device
- Patent number 10,734,427
- Issue date Aug 4, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
QE approach by double-side, multi absorption structure
- Patent number 10,707,361
- Issue date Jul 7, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
QE approach by double-side, multi absorption structure
- Patent number 10,553,733
- Issue date Feb 4, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,276,427
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ching-Chung Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor device with reflective structure and method for formin...
- Patent number 10,211,244
- Issue date Feb 19, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS image sensor with dual damascene grid design having absorption...
- Patent number 10,153,319
- Issue date Dec 11, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi-Yuan Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front side illuminated image sensor device structure and method for...
- Patent number 10,056,427
- Issue date Aug 21, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Heng Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS image sensor with dual damascene grid design having absorption...
- Patent number 9,985,072
- Issue date May 29, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi-Yuan Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 9,984,918
- Issue date May 29, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Chung Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Release accumulative charges on wafers using O2 neutralization
- Patent number 8,293,649
- Issue date Oct 23, 2012
- Global Unichip Corp.
- Ting-Yi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Release accumulative charges by tuning ESC voltages in via-etchers
- Patent number 8,263,495
- Issue date Sep 11, 2012
- Global Unichip Corp.
- Ting-Yi Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE WITH JUNCTION LEAKAGE REDUCTION
- Publication number 20220199459
- Publication date Jun 23, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE
- Publication number 20210119064
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Po-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR DEVICE WITH REFLECTIVE LAYER
- Publication number 20200343289
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE
- Publication number 20200111923
- Publication date Apr 9, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Po-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE
- Publication number 20200020816
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Po-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20190252241
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- CHING-CHUNG SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING IMAGE SENSOR DEVICE
- Publication number 20190181174
- Publication date Jun 13, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR DEVICE WITH REFLECTIVE STRUCTURE AND METHOD FOR FORMIN...
- Publication number 20190006408
- Publication date Jan 3, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20180277420
- Publication date Sep 27, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- CHING-CHUNG SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS IMAGE SENSOR WITH DUAL DAMASCENE GRID DESIGN HAVING ABSORPTION...
- Publication number 20180240838
- Publication date Aug 23, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Chi-Yuan Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS IMAGE SENSOR WITH DUAL DAMASCENE GRID DESIGN HAVING ABSORPTION...
- Publication number 20180151615
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Chi-Yuan Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE
- Publication number 20180151759
- Publication date May 31, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Po-Han Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20170194190
- Publication date Jul 6, 2017
- Taiwan Semiconductor Manufacturing company Ltd.
- CHING-CHUNG SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH JUNCTION LEAKAGE REDUCTION
- Publication number 20160372360
- Publication date Dec 22, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Release Accumulative Charges by Tuning ESC Voltages in Via-Etchers
- Publication number 20110151669
- Publication date Jun 23, 2011
- Ting-Yi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Release Accumulative Charges on Wafers Using O2 Neutralization
- Publication number 20110147338
- Publication date Jun 23, 2011
- Ting-Yi Lin
- H01 - BASIC ELECTRIC ELEMENTS

Chi-Yuan Wen

Person

Patents Grantslast 30 patents

LDMOS device having isolation regions comprising DTI regions extend...

QE approach by double-side, multi absorption structure

Image sensor device with reflective layer

QE approach by double-side, multi absorption structure

Semiconductor structure and manufacturing method thereof

Method for forming image sensor device

QE approach by double-side, multi absorption structure

QE approach by double-side, multi absorption structure

Semiconductor structure and manufacturing method thereof

Image sensor device with reflective structure and method for formin...

CMOS image sensor with dual damascene grid design having absorption...

Front side illuminated image sensor device structure and method for...

CMOS image sensor with dual damascene grid design having absorption...

Semiconductor structure and manufacturing method thereof

Release accumulative charges on wafers using O2 neutralization

Release accumulative charges by tuning ESC voltages in via-etchers

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE WITH JUNCTION LEAKAGE REDUCTION

QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE

IMAGE SENSOR DEVICE WITH REFLECTIVE LAYER

QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE

QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD FOR FORMING IMAGE SENSOR DEVICE

IMAGE SENSOR DEVICE WITH REFLECTIVE STRUCTURE AND METHOD FOR FORMIN...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

CMOS IMAGE SENSOR WITH DUAL DAMASCENE GRID DESIGN HAVING ABSORPTION...

CMOS IMAGE SENSOR WITH DUAL DAMASCENE GRID DESIGN HAVING ABSORPTION...

QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE WITH JUNCTION LEAKAGE REDUCTION

Release Accumulative Charges by Tuning ESC Voltages in Via-Etchers

Release Accumulative Charges on Wafers Using O2 Neutralization