Chi ZHANG

Person

Nanjing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction semiconductor device with low on-resistance
- Patent number 12,224,340
- Issue date Feb 11, 2025
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-threshold power semiconductor device and manufacturing method...
- Patent number 12,107,167
- Issue date Oct 1, 2024
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN power semiconductor device integrated with self-feedback gate c...
- Patent number 12,027,516
- Issue date Jul 2, 2024
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Underwater umbilical cable which is capable of temperature and vibr...
- Patent number 11,804,316
- Issue date Oct 31, 2023
- Yixin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride power device and manufacturing method thereof
- Patent number 11,515,395
- Issue date Nov 29, 2022
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction semiconductor device having high blocking capability
- Patent number 11,322,606
- Issue date May 3, 2022
- Southeast University
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene channel silicon carbide power semiconductor transistor
- Patent number 11,158,708
- Issue date Oct 26, 2021
- Southeast University
- Weifeng Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OCEAN CURRENT DETECTION DEVICE AND METHOD BASED ON DOUBLE-HELIX AND...
- Publication number 20240353441
- Publication date Oct 24, 2024
- Nanjing University
- Yixin Zhang
- G01 - MEASURING TESTING
Information Patent Application
Underwater Umbilical cable which is capable of temperature And Vibr...
- Publication number 20230154653
- Publication date May 18, 2023
- Nanjing University
- Yixin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-THRESHOLD POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD...
- Publication number 20220367716
- Publication date Nov 17, 2022
- SOUTHEAST UNIVERSITY
- Siyang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220223692
- Publication date Jul 14, 2022
- SOUTHEAST UNIVERSITY
- SIYANG LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION SEMICONDUCTOR DEVICE WITH LOW ON-RESISTANCE
- Publication number 20220069115
- Publication date Mar 3, 2022
- SOUTHEAST UNIVERSITY
- Siyang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE CHANNEL SILICON CARBIDE POWER SEMICONDUCTOR TRANSISTOR
- Publication number 20210336009
- Publication date Oct 28, 2021
- SOUTHEAST UNIVERSITY
- Weifeng SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION SEMICONDUCTOR DEVICE HAVING HIGH BLOCKING CAPABILITY
- Publication number 20210234030
- Publication date Jul 29, 2021
- SOUTHEAST UNIVERSITY
- Weifeng SUN
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Heterojunction semiconductor device with low on-resistance

High-threshold power semiconductor device and manufacturing method...

GaN power semiconductor device integrated with self-feedback gate c...

Underwater umbilical cable which is capable of temperature and vibr...

Gallium nitride power device and manufacturing method thereof

Heterojunction semiconductor device having high blocking capability

Graphene channel silicon carbide power semiconductor transistor

Patents Applicationslast 30 patents

OCEAN CURRENT DETECTION DEVICE AND METHOD BASED ON DOUBLE-HELIX AND...

Underwater Umbilical cable which is capable of temperature And Vibr...

HIGH-THRESHOLD POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD...

GALLIUM NITRIDE POWER DEVICE AND MANUFACTURING METHOD THEREOF

HETEROJUNCTION SEMICONDUCTOR DEVICE WITH LOW ON-RESISTANCE

GRAPHENE CHANNEL SILICON CARBIDE POWER SEMICONDUCTOR TRANSISTOR

HETEROJUNCTION SEMICONDUCTOR DEVICE HAVING HIGH BLOCKING CAPABILITY