CHIA-HAO TAI

Person

HSINCHU COUNTY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Low voltage difference operated EEPROM and operating method thereof
- Patent number 10,242,741
- Issue date Mar 26, 2019
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage difference operated EEPROM and operating method thereof
- Patent number 9,601,202
- Issue date Mar 21, 2017
- Yield Microelectronics Corp.
- Hsin-Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Low-voltage EEPROM array
- Patent number 8,305,808
- Issue date Nov 6, 2012
- Yield Microelectronics Corp.
- Hsin Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Area saving electrically-erasable-programmable read-only memory (EE...
- Patent number 8,300,461
- Issue date Oct 30, 2012
- Yield Microelectronics Corp.
- Hsin Chang Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Cost saving electrically-erasable-programmable read-only memory (EE...
- Patent number 8,300,469
- Issue date Oct 30, 2012
- Yield Microelectronics Corp.
- Hsin Chang Lin
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF
- Publication number 20190088330
- Publication date Mar 21, 2019
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF
- Publication number 20160379712
- Publication date Dec 29, 2016
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF
- Publication number 20160329104
- Publication date Nov 10, 2016
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
AREA SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...
- Publication number 20120051147
- Publication date Mar 1, 2012
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
COST SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...
- Publication number 20120039129
- Publication date Feb 16, 2012
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
LOW-VOLTAGE EEPROM ARRAY
- Publication number 20120039131
- Publication date Feb 16, 2012
- YIELD MICROELECTRONICS CORP.
- HSIN-CHANG LIN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR INTEGRATING DRAM AND NVM
- Publication number 20120040504
- Publication date Feb 16, 2012
- YIELD MICROELECTRONICS CORP.
- HSIN CHANG LIN
- H01 - BASIC ELECTRIC ELEMENTS

CHIA-HAO TAI

Person

Patents Grantslast 30 patents

Low voltage difference operated EEPROM and operating method thereof

Low voltage difference operated EEPROM and operating method thereof

Low-voltage EEPROM array

Area saving electrically-erasable-programmable read-only memory (EE...

Cost saving electrically-erasable-programmable read-only memory (EE...

Patents Applicationslast 30 patents

LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF

LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF

LOW VOLTAGE DIFFERENCE OPERATED EEPROM AND OPERATING METHOD THEREOF

AREA SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...

COST SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EE...

LOW-VOLTAGE EEPROM ARRAY

METHOD FOR INTEGRATING DRAM AND NVM