Chiahsun Tseng

Person

Armonk, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned contact process enabled by low temperature
- Patent number 10,566,454
- Issue date Feb 18, 2020
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with merge-free fins
- Patent number 10,529,858
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Inc.
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-bridging contact via structures in proximity
- Patent number 10,217,696
- Issue date Feb 26, 2019
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin density control of multigate devices through sidewall image tra...
- Patent number 10,170,327
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk fin formation with vertical fin sidewall profile
- Patent number 10,170,471
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact process enabled by low temperature
- Patent number 10,037,944
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming FinFETs having epitaxial Si S/D extensions with...
- Patent number 10,020,303
- Issue date Jul 10, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-lithographic line pattern formation
- Patent number 9,997,367
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with non-merged epitaxial S/D extensions on a seed layer an...
- Patent number 9,991,255
- Issue date Jun 5, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with non-merged epitaxial S/D extensions having a SiGe seed...
- Patent number 9,991,258
- Issue date Jun 5, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device having integrated SiGe fin
- Patent number 9,985,030
- Issue date May 29, 2018
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET with merge-free fins
- Patent number 9,947,791
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-bridging contact via structures in proximity
- Patent number 9,941,191
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densely spaced fins for semiconductor fin field effect transistors
- Patent number 9,728,534
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin density control of multigate devices through sidewall image tra...
- Patent number 9,728,419
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making an efuse
- Patent number 9,646,929
- Issue date May 9, 2017
- GLOBALFOUNDRIES, INC.
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially isolated fin-shaped field effect transistors
- Patent number 9,634,000
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact process enabled by low temperature
- Patent number 9,634,117
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stop layer through ion implantation for etch stop
- Patent number 9,627,263
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure integration scheme for fin field effect transistors
- Patent number 9,583,585
- Issue date Feb 28, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tone inverted directed self-assembly (DSA) fin patterning
- Patent number 9,552,988
- Issue date Jan 24, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-K spacer for RMG finFET formation
- Patent number 9,543,407
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk fin formation with vertical fin sidewall profile
- Patent number 9,515,089
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densely spaced fins for semiconductor fin field effect transistors
- Patent number 9,508,713
- Issue date Nov 29, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming FinFETs with non-merged epitaxial fin extensions
- Patent number 9,484,440
- Issue date Nov 1, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-lithographic line pattern formation
- Patent number 9,396,957
- Issue date Jul 19, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gate structure integration scheme for fin field effect transistors
- Patent number 9,391,155
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI region for small fin pitch in FinFET devices
- Patent number 9,385,123
- Issue date Jul 5, 2016
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tone inverted directed self-assembly (DSA) fin patterning
- Patent number 9,368,350
- Issue date Jun 14, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-lithographic hole pattern formation
- Patent number 9,330,962
- Issue date May 3, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STOPLAYER
- Publication number 20190206864
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Hong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE
- Publication number 20180331039
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH MERGE-FREE FINS
- Publication number 20180197980
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES INC.
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY
- Publication number 20180068929
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DENSITY CONTROL OF MULTIGATE DEVICES THROUGH SIDEWALL IMAGE TRA...
- Publication number 20170271167
- Publication date Sep 21, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR SiGe FIN FORMATION IN A SEMICONDUCTOR DEVICE
- Publication number 20170186747
- Publication date Jun 29, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stop Layer Through Ion Implantation For Etch Stop
- Publication number 20170148790
- Publication date May 25, 2017
- International Business Machines Corporation
- Hong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE
- Publication number 20170141038
- Publication date May 18, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-K SPACER FOR RMG FINFET FORMATION
- Publication number 20170040437
- Publication date Feb 9, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20170033104
- Publication date Feb 2, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE
- Publication number 20170033103
- Publication date Feb 2, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TONE INVERTED DIRECTED SELF-ASSEMBLY (DSA) FIN PATTERNING
- Publication number 20160379823
- Publication date Dec 29, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE
- Publication number 20160336347
- Publication date Nov 17, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LITHOGRAPHIC LINE PATTERN FORMATION
- Publication number 20160329214
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE
- Publication number 20160204257
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20160118302
- Publication date Apr 28, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20160079384
- Publication date Mar 17, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY
- Publication number 20160035650
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Chiahsun Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSELY SPACED FINS FOR SEMICONDUCTOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20160027776
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI REGION FOR SMALL FIN PITCH IN FINFET DEVICES
- Publication number 20150357328
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI REGION FOR SMALL FIN PITCH IN FINFET DEVICES
- Publication number 20150340272
- Publication date Nov 26, 2015
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY ISOLATED SiGe FIN FORMATION BY LOCAL OXIDATION
- Publication number 20150332977
- Publication date Nov 19, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20150295065
- Publication date Oct 15, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR DEVICE HAVING INTEGRATED SiGe FIN
- Publication number 20150287614
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE
- Publication number 20150279996
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSELY SPACED FINS FOR SEMICONDUCTOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20150255300
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DENSITY CONTROL OF MULTIGATE DEVICES THROUGH SIDEWALL IMAGE TRA...
- Publication number 20150243513
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-K SPACER FOR RMG FINFET FORMATION
- Publication number 20150243760
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS
- Publication number 20150228762
- Publication date Aug 13, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20150206877
- Publication date Jul 23, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS

Chiahsun Tseng

Person

Patents Grantslast 30 patents

Self-aligned contact process enabled by low temperature

FinFET with merge-free fins

Non-bridging contact via structures in proximity

Fin density control of multigate devices through sidewall image tra...

Bulk fin formation with vertical fin sidewall profile

Self-aligned contact process enabled by low temperature

Methods for forming FinFETs having epitaxial Si S/D extensions with...

Non-lithographic line pattern formation

FinFETs with non-merged epitaxial S/D extensions on a seed layer an...

FinFETs with non-merged epitaxial S/D extensions having a SiGe seed...

FinFET semiconductor device having integrated SiGe fin

FinFET with merge-free fins

Non-bridging contact via structures in proximity

Densely spaced fins for semiconductor fin field effect transistors

Fin density control of multigate devices through sidewall image tra...

Making an efuse

Partially isolated fin-shaped field effect transistors

Self-aligned contact process enabled by low temperature

Stop layer through ion implantation for etch stop

Gate structure integration scheme for fin field effect transistors

Tone inverted directed self-assembly (DSA) fin patterning

Low-K spacer for RMG finFET formation

Bulk fin formation with vertical fin sidewall profile

Densely spaced fins for semiconductor fin field effect transistors

Methods for forming FinFETs with non-merged epitaxial fin extensions

Non-lithographic line pattern formation

Gate structure integration scheme for fin field effect transistors

STI region for small fin pitch in FinFET devices

Tone inverted directed self-assembly (DSA) fin patterning

Non-lithographic hole pattern formation

Patents Applicationslast 30 patents

STOPLAYER

SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE

FINFET WITH MERGE-FREE FINS

NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY

FIN DENSITY CONTROL OF MULTIGATE DEVICES THROUGH SIDEWALL IMAGE TRA...

STRUCTURE AND METHOD FOR SiGe FIN FORMATION IN A SEMICONDUCTOR DEVICE

Stop Layer Through Ion Implantation For Etch Stop

SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE

LOW-K SPACER FOR RMG FINFET FORMATION

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES

BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE

TONE INVERTED DIRECTED SELF-ASSEMBLY (DSA) FIN PATTERNING

BULK FIN FORMATION WITH VERTICAL FIN SIDEWALL PROFILE

NON-LITHOGRAPHIC LINE PATTERN FORMATION

SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE

GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS

GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS

NON-BRIDGING CONTACT VIA STRUCTURES IN PROXIMITY

DENSELY SPACED FINS FOR SEMICONDUCTOR FIN FIELD EFFECT TRANSISTORS

STI REGION FOR SMALL FIN PITCH IN FINFET DEVICES

STI REGION FOR SMALL FIN PITCH IN FINFET DEVICES

ELECTRICALLY ISOLATED SiGe FIN FORMATION BY LOCAL OXIDATION

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES

FINFET SEMICONDUCTOR DEVICE HAVING INTEGRATED SiGe FIN

SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE

DENSELY SPACED FINS FOR SEMICONDUCTOR FIN FIELD EFFECT TRANSISTORS

FIN DENSITY CONTROL OF MULTIGATE DEVICES THROUGH SIDEWALL IMAGE TRA...

LOW-K SPACER FOR RMG FINFET FORMATION

GATE STRUCTURE INTEGRATION SCHEME FOR FIN FIELD EFFECT TRANSISTORS

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES