Chiara CORVASCE

Person

Bergdietikon, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device and manufacturiing method
- Patent number 12,199,144
- Issue date Jan 14, 2025
- HITACHI ENERGY LTD
- Wolfgang Amadeus Vitale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting insulated gate power semiconductor device having...
- Patent number 12,068,312
- Issue date Aug 20, 2024
- HITACHI ENERGY LTD
- Charalampos Papadopoulos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate power semiconductor device and method for manufactur...
- Patent number 11,189,688
- Issue date Nov 30, 2021
- ABB Power Grids Switzerland AG
- Luca De-Michielis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate power semiconductor device and method for manufactur...
- Patent number 11,075,285
- Issue date Jul 27, 2021
- ABB Power Grids Switzerland AG
- Luca De-Michielis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 10,629,714
- Issue date Apr 21, 2020
- ABB Schweiz AG
- Chiara Corvasce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with thick top-metal-design and method f...
- Patent number 10,141,196
- Issue date Nov 27, 2018
- ABB Schweiz AG
- Sven Matthias
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate power semiconductor device and method for manufactur...
- Patent number 10,128,361
- Issue date Nov 13, 2018
- ABB Schweiz AG
- Luca De-Michielis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting semiconductor device
- Patent number 10,109,725
- Issue date Oct 23, 2018
- ABB Schweiz AG
- Liutauras Storasta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for semiconductor devices and corresponding fabric...
- Patent number 9,859,360
- Issue date Jan 2, 2018
- ABB Schweiz AG
- Marina Antoniou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 9,825,158
- Issue date Nov 21, 2017
- ABB Schweiz AG
- Chiara Corvasce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting semiconductor device
- Patent number 9,553,086
- Issue date Jan 24, 2017
- ABB Schweiz AG
- Liutauras Storasta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 9,153,676
- Issue date Oct 6, 2015
- ABB Technology AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 9,105,680
- Issue date Aug 11, 2015
- ABB Technology AG
- Maxi Andenna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 9,099,520
- Issue date Aug 4, 2015
- ABB Technology AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE AND MANUFACTURIING METHOD
- Publication number 20240379756
- Publication date Nov 14, 2024
- Hitachi Energy Ltd
- Wolfgang Amadeus VITALE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING TH...
- Publication number 20240162295
- Publication date May 16, 2024
- Hitachi Energy Ltd
- Umamaheswara VEMULAPATI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH AN INSULATED TRENCH GATE ELECTRODE...
- Publication number 20240038879
- Publication date Feb 1, 2024
- Hitachi Energy Switzerland AG
- Luca DE MICHIELIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor
- Publication number 20220393023
- Publication date Dec 8, 2022
- Hitachi Energy Switzerland AG
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting Insulated Gate Power Semiconductor Device Having...
- Publication number 20220181319
- Publication date Jun 9, 2022
- ABB Power Grids Switzerland AG
- Charalampos PAPADOPOULOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Shadow-Mask Free Method for Producin...
- Publication number 20210391481
- Publication date Dec 16, 2021
- ABB Power Grids Switzerland AG
- Charalampos Papadopoulos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Power Semiconductor Device and Method for Manufactur...
- Publication number 20210320170
- Publication date Oct 14, 2021
- ABB Power Grids Switzerland AG
- Luca De-Michielis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTUR...
- Publication number 20190123172
- Publication date Apr 25, 2019
- ABB Schweiz AG
- Luca De-Michielis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20190109218
- Publication date Apr 11, 2019
- ABB Schweiz AG
- Chiara Corvasce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH THICK TOP-METAL-DESIGN AND METHOD F...
- Publication number 20180012773
- Publication date Jan 11, 2018
- ABB Schweiz AG
- Sven Matthias
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTUR...
- Publication number 20170323959
- Publication date Nov 9, 2017
- ABB Schweiz AG
- Luca De-Michielis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING SEMICONDUCTOR DEVICE
- Publication number 20170294526
- Publication date Oct 12, 2017
- ABB Schweiz AG
- Liutauras Storasta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING SEMICONDUCTOR DEVICE
- Publication number 20160307888
- Publication date Oct 20, 2016
- ABB Schweiz AG
- Liutauras Storasta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR SEMICONDUCTOR DEVICES AND CORRESPONDING FABRIC...
- Publication number 20160300904
- Publication date Oct 13, 2016
- ABB TECHNOLOGY AG
- Marina Antoniou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20160254376
- Publication date Sep 1, 2016
- ABB TECHNOLOGY AG
- Chiara Corvasce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A POWE...
- Publication number 20140370665
- Publication date Dec 18, 2014
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20140124830
- Publication date May 8, 2014
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20140124831
- Publication date May 8, 2014
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20140124829
- Publication date May 8, 2014
- ABB TECHNOLOGY AG
- Maxi ANDENNA
- H01 - BASIC ELECTRIC ELEMENTS

Chiara CORVASCE

Person

Patents Grantslast 30 patents

Power semiconductor device and manufacturiing method

Reverse conducting insulated gate power semiconductor device having...

Insulated gate power semiconductor device and method for manufactur...

Insulated gate power semiconductor device and method for manufactur...

Insulated gate bipolar transistor

Power semiconductor device with thick top-metal-design and method f...

Insulated gate power semiconductor device and method for manufactur...

Reverse-conducting semiconductor device

Edge termination for semiconductor devices and corresponding fabric...

Insulated gate bipolar transistor

Reverse-conducting semiconductor device

Insulated gate bipolar transistor

Insulated gate bipolar transistor

Insulated gate bipolar transistor

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE AND MANUFACTURIING METHOD

GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING TH...

POWER SEMICONDUCTOR DEVICE WITH AN INSULATED TRENCH GATE ELECTRODE...

Insulated Gate Bipolar Transistor

Reverse Conducting Insulated Gate Power Semiconductor Device Having...

Power Semiconductor Device and Shadow-Mask Free Method for Producin...

Insulated Gate Power Semiconductor Device and Method for Manufactur...

INSULATED GATE POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTUR...

INSULATED GATE BIPOLAR TRANSISTOR

POWER SEMICONDUCTOR DEVICE WITH THICK TOP-METAL-DESIGN AND METHOD F...

INSULATED GATE POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTUR...

REVERSE-CONDUCTING SEMICONDUCTOR DEVICE

REVERSE-CONDUCTING SEMICONDUCTOR DEVICE

EDGE TERMINATION FOR SEMICONDUCTOR DEVICES AND CORRESPONDING FABRIC...

INSULATED GATE BIPOLAR TRANSISTOR

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A POWE...

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR