Chien-Lan Hsueh

Person

Campbell, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Resistive switching layers including Hf-Al-O
- Patent number 9,276,203
- Issue date Mar 1, 2016
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High productivity combinatorial processing using pressure-controlle...
- Patent number 9,269,567
- Issue date Feb 23, 2016
- Intermolecular, Inc.
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Confined defect profiling within resistive random memory access cells
- Patent number 9,269,896
- Issue date Feb 23, 2016
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Low-temperature deposition of nitrides by UV-assisted ALD or CVD
- Patent number 9,246,099
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal organic chemical vapor deposition of embedded resistors for R...
- Patent number 9,178,152
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling composition of multiple oxides in resistive switching l...
- Patent number 9,065,040
- Issue date Jun 23, 2015
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using saturated and unsaturated ALD processes to deposit oxides as...
- Patent number 9,040,413
- Issue date May 26, 2015
- Intermolecular, Inc.
- Randall J. Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal organic chemical vapor deposition of resistive switching laye...
- Patent number 9,029,192
- Issue date May 12, 2015
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile resistive memory element with a silicon-based switching...
- Patent number 9,018,068
- Issue date Apr 28, 2015
- Intermolecular, Inc.
- Randall J. Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal aluminum nitride embedded resistors for resistive random memo...
- Patent number 9,006,696
- Issue date Apr 14, 2015
- Intermolecular, Inc.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM cells including TaXSiYN embedded resistors
- Patent number 8,969,129
- Issue date Mar 3, 2015
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined defect profiling within resistive random memory access cells
- Patent number 8,913,418
- Issue date Dec 16, 2014
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling composition of multiple oxides in resistive switching l...
- Patent number 8,883,557
- Issue date Nov 11, 2014
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal aluminum nitride embedded resistors for resistive random memo...
- Patent number 8,853,661
- Issue date Oct 7, 2014
- Intermolecular, Inc.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using TiON as electrodes and switching layers in ReRAM devices
- Patent number 8,853,046
- Issue date Oct 7, 2014
- Intermolecular, Inc.
- Nan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM stacks preparation by using single ALD or PVD chamber
- Patent number 8,846,484
- Issue date Sep 30, 2014
- Intermolecular, Inc.
- Albert Sanghyup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM cells including TaXSiYN embedded resistors
- Patent number 8,835,890
- Issue date Sep 16, 2014
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low-Temperature Deposition of Metal Silicon Nitrides from Silicon...
- Publication number 20160133837
- Publication date May 12, 2016
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM MIMCAP Stack with MoO2 Electrode
- Publication number 20160133691
- Publication date May 12, 2016
- Intermolecular, Inc.
- Prashant B. Phatak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Systems and Methods for Parallel Combinatorial Vapor Deposition Pro...
- Publication number 20150184287
- Publication date Jul 2, 2015
- Intermolecular, Inc.
- James Tsung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of forming nitrides at low substrate temperatures
- Publication number 20150179316
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Organic Chemical Vapor Deposition of Embedded Resistors for R...
- Publication number 20150179937
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-temperature growth of complex compound films
- Publication number 20150176122
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
One-Way Valves for Controlling Flow into Deposition Chamber
- Publication number 20150170908
- Publication date Jun 18, 2015
- Intermolecular Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING L...
- Publication number 20150060753
- Publication date Mar 5, 2015
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Defect Profiling within Resistive Random Memory Access Cells
- Publication number 20150034898
- Publication date Feb 5, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Aluminum Nitride Embedded Resistors for Resistive Random Memo...
- Publication number 20140377931
- Publication date Dec 25, 2014
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM Cells Including TaXSiYN Embedded Resistors
- Publication number 20140357046
- Publication date Dec 4, 2014
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nonvolatile resistive memory element with a silicon-based switching...
- Publication number 20140322884
- Publication date Oct 30, 2014
- INTERMOLECULAR INC.
- Randall J. Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Aluminum Nitride Embedded Resistors for Resistive Random Memo...
- Publication number 20140264223
- Publication date Sep 18, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Defect Profiling within Resistive Random Memory Access Cells
- Publication number 20140264231
- Publication date Sep 18, 2014
- INTERMOLECULAR INC.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Switching Layers Including Hf-Al-O
- Publication number 20140175361
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using saturated and unsaturated ALD processes to deposit oxides as...
- Publication number 20140166956
- Publication date Jun 19, 2014
- INTERMOLECULAR INC.
- Randall J. Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM Cells Including TaXSiYN Embedded Resistors
- Publication number 20140103284
- Publication date Apr 17, 2014
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
USING TiON AS ELECTRODES AND SWITCHING LAYERS IN ReRAM DEVICES
- Publication number 20130214236
- Publication date Aug 22, 2013
- Intermolecular, Inc.
- Nan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM STACKS PREPARATION BY USING SINGLE ALD OR PVD CHAMBER
- Publication number 20130210193
- Publication date Aug 15, 2013
- Intermolecular, Inc.
- Albert Lee
- H01 - BASIC ELECTRIC ELEMENTS

Chien-Lan Hsueh

Person

Patents Grantslast 30 patents

Resistive switching layers including Hf-Al-O

High productivity combinatorial processing using pressure-controlle...

Confined defect profiling within resistive random memory access cells

Low-temperature deposition of nitrides by UV-assisted ALD or CVD

Metal organic chemical vapor deposition of embedded resistors for R...

Controlling composition of multiple oxides in resistive switching l...

Using saturated and unsaturated ALD processes to deposit oxides as...

Metal organic chemical vapor deposition of resistive switching laye...

Nonvolatile resistive memory element with a silicon-based switching...

Metal aluminum nitride embedded resistors for resistive random memo...

ReRAM cells including TaXSiYN embedded resistors

Confined defect profiling within resistive random memory access cells

Controlling composition of multiple oxides in resistive switching l...

Metal aluminum nitride embedded resistors for resistive random memo...

Using TiON as electrodes and switching layers in ReRAM devices

ReRAM stacks preparation by using single ALD or PVD chamber

ReRAM cells including TaXSiYN embedded resistors

Patents Applicationslast 30 patents

Low-Temperature Deposition of Metal Silicon Nitrides from Silicon...

DRAM MIMCAP Stack with MoO2 Electrode

Systems and Methods for Parallel Combinatorial Vapor Deposition Pro...

Methods of forming nitrides at low substrate temperatures

Metal Organic Chemical Vapor Deposition of Embedded Resistors for R...

Low-temperature growth of complex compound films

One-Way Valves for Controlling Flow into Deposition Chamber

CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING L...

Confined Defect Profiling within Resistive Random Memory Access Cells

Metal Aluminum Nitride Embedded Resistors for Resistive Random Memo...

ReRAM Cells Including TaXSiYN Embedded Resistors

Nonvolatile resistive memory element with a silicon-based switching...

Metal Aluminum Nitride Embedded Resistors for Resistive Random Memo...

Confined Defect Profiling within Resistive Random Memory Access Cells

Resistive Switching Layers Including Hf-Al-O

Using saturated and unsaturated ALD processes to deposit oxides as...

ReRAM Cells Including TaXSiYN Embedded Resistors

USING TiON AS ELECTRODES AND SWITCHING LAYERS IN ReRAM DEVICES

ReRAM STACKS PREPARATION BY USING SINGLE ALD OR PVD CHAMBER