Chih-Chen Cho

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multiple-depth STI trenches in integrated circuit fabrication
- Patent number 7,939,394
- Issue date May 10, 2011
- Micron Technology, Inc.
- Shubneesh Batra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-depth STI trenches in integrated circuit fabrication
- Patent number 7,354,812
- Issue date Apr 8, 2008
- Micron Technology, Inc.
- Shubneesh Batra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Applying epitaxial silicon in disposable spacer flow
- Patent number 7,342,273
- Issue date Mar 11, 2008
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross diffusion barrier layer in polysilicon
- Patent number 7,214,613
- Issue date May 8, 2007
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making semiconductor structures having high-speed areas...
- Patent number 7,169,662
- Issue date Jan 30, 2007
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross diffusion barrier layer in polysilicon
- Patent number 7,166,896
- Issue date Jan 23, 2007
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor with halo implant regions
- Patent number 7,153,731
- Issue date Dec 26, 2006
- Micron Technology, Inc.
- Todd R. Abbott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET having epitaxial silicon growth
- Patent number 7,119,369
- Issue date Oct 10, 2006
- Micro Technology, Inc.
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor
- Patent number 7,112,482
- Issue date Sep 26, 2006
- Micron Technology, Inc.
- Todd R. Abbott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making semiconductor structures having high-speed areas...
- Patent number 7,095,083
- Issue date Aug 22, 2006
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backend metallization method and device obtained therefrom
- Patent number 7,056,823
- Issue date Jun 6, 2006
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Applying epitaxial silicon in disposable spacer flow
- Patent number 7,037,775
- Issue date May 2, 2006
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated transistor circuitry
- Patent number 6,987,291
- Issue date Jan 17, 2006
- Micron Technology, Inc.
- Todd R. Abbott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppression of cross diffusion and gate depletion
- Patent number 6,962,841
- Issue date Nov 8, 2005
- Micron Technology, Inc.
- John D. Trivedi
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method of increasing sram cell capacitance with metal...
- Patent number 6,867,131
- Issue date Mar 15, 2005
- Micron Technology, Inc.
- Zhongze Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Backend metallization method and device obtained therefrom
- Patent number 6,858,937
- Issue date Feb 22, 2005
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppression of cross diffusion and gate depletion
- Patent number 6,812,529
- Issue date Nov 2, 2004
- Micron Technology, Inc.
- John D. Trivedi
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor formation for semiconductor devices
- Patent number 6,784,062
- Issue date Aug 31, 2004
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures comprising transistor gates
- Patent number 6,770,927
- Issue date Aug 3, 2004
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Applying epitaxial silicon in disposable spacer flow
- Patent number 6,756,264
- Issue date Jun 29, 2004
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making semiconductor structures having high-speed areas...
- Patent number 6,730,553
- Issue date May 4, 2004
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET having epitaxial silicon growth
- Patent number 6,716,687
- Issue date Apr 6, 2004
- Micron Technology, Inc.
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-diffusion resistant dual-polycide semiconductor structure and...
- Patent number 6,613,617
- Issue date Sep 2, 2003
- Micron Technology, Inc.
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor
- Patent number 6,599,789
- Issue date Jul 29, 2003
- Micron Technology, Inc.
- Todd R. Abbott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-diffusion resistant dual-polycide semiconductor structure and...
- Patent number 6,583,518
- Issue date Jun 24, 2003
- Micron Technology, Inc.
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures comprising transistor gates
- Patent number 6,501,114
- Issue date Dec 31, 2002
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Applying epitaxial silicon in disposable spacer flow
- Patent number 6,448,129
- Issue date Sep 10, 2002
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming portions of transistor structures, methods of fo...
- Patent number 6,420,250
- Issue date Jul 16, 2002
- Micron Technology, Inc.
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTIPLE-DEPTH STI TRENCHES IN INTEGRATED CIRCUIT FABRICATION
- Publication number 20080176378
- Publication date Jul 24, 2008
- Micron Technology, Inc.
- Shubneesh Batra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cross diffusion barrier layer in gate structure
- Publication number 20070102753
- Publication date May 10, 2007
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backend metallization method and device obtained therefrom
- Publication number 20060197231
- Publication date Sep 7, 2006
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Applying epitaxial silicon in disposable spacer flow
- Publication number 20060091479
- Publication date May 4, 2006
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-depth STI trenches in integrated circuit fabrication
- Publication number 20060043455
- Publication date Mar 2, 2006
- Shubneesh Batra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of cross diffusion and gate depletion
- Publication number 20050266666
- Publication date Dec 1, 2005
- Jigish D. Trivedi
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for making semiconductor structures having high-speed areas...
- Publication number 20050173747
- Publication date Aug 11, 2005
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for increasing SRAM cell capacitance with metal fill
- Publication number 20050151198
- Publication date Jul 14, 2005
- Zhongze Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Backend metallization method and device obtained therefrom
- Publication number 20050116349
- Publication date Jun 2, 2005
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cross diffusion barrier layer in polysilicon
- Publication number 20050032316
- Publication date Feb 10, 2005
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a field effect transistor
- Publication number 20050003627
- Publication date Jan 6, 2005
- Todd R. Abbott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET having epitaxial silicon growth
- Publication number 20040229414
- Publication date Nov 18, 2004
- Micron Technology, Inc.
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Applying epitaxial silicon in disposable spacer flow
- Publication number 20040219756
- Publication date Nov 4, 2004
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for making semiconductor structures having high-speed areas...
- Publication number 20040171247
- Publication date Sep 2, 2004
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming conductive contacts
- Publication number 20040102036
- Publication date May 27, 2004
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of cross diffusion and gate depletion
- Publication number 20040048431
- Publication date Mar 11, 2004
- Jigish D. Trivedi
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus and method of increasing sram cell capacitance with metal...
- Publication number 20040043554
- Publication date Mar 4, 2004
- Zhongze Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Cross diffusion barrier layer in polysilicon
- Publication number 20040036119
- Publication date Feb 26, 2004
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor formation for semiconductor devices
- Publication number 20030224574
- Publication date Dec 4, 2003
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fet having epitaxial silicon growth
- Publication number 20030153155
- Publication date Aug 14, 2003
- Micron Technology Inc.
- Zhongze Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming conductive contacts
- Publication number 20030077890
- Publication date Apr 24, 2003
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures comprising transistor gates
- Publication number 20030073277
- Publication date Apr 17, 2003
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cross-diffusion resistant dual-polycide semiconductor structure and...
- Publication number 20030057453
- Publication date Mar 27, 2003
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for making semiconductor structures having high-speed areas...
- Publication number 20030054612
- Publication date Mar 20, 2003
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-DIFFUSION RESISTANT DUAL-POLYCIDE SEMICONDUCTOR STRUCTURE AND...
- Publication number 20030042628
- Publication date Mar 6, 2003
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuitry
- Publication number 20030015766
- Publication date Jan 23, 2003
- Todd R. Abbott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FIELD EFFECT TRANSISTOR
- Publication number 20030008438
- Publication date Jan 9, 2003
- Todd R. Abbott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backend metallization method and device obtained therefrom
- Publication number 20020195715
- Publication date Dec 26, 2002
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Applying epitaxial silicon in disposable spacer flow
- Publication number 20020197786
- Publication date Dec 26, 2002
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of cross diffusion and gate depletion
- Publication number 20020132441
- Publication date Sep 19, 2002
- Jigish D. Trivedi
- H01 - BASIC ELECTRIC ELEMENTS

Chih-Chen Cho

Person

Patents Grantslast 30 patents

Multiple-depth STI trenches in integrated circuit fabrication

Multiple-depth STI trenches in integrated circuit fabrication

Applying epitaxial silicon in disposable spacer flow

Cross diffusion barrier layer in polysilicon

Methods for making semiconductor structures having high-speed areas...

Cross diffusion barrier layer in polysilicon

Method of forming a field effect transistor with halo implant regions

FET having epitaxial silicon growth

Method of forming a field effect transistor

Methods for making semiconductor structures having high-speed areas...

Backend metallization method and device obtained therefrom

Applying epitaxial silicon in disposable spacer flow

Integrated transistor circuitry

Suppression of cross diffusion and gate depletion

Apparatus and method of increasing sram cell capacitance with metal...

Backend metallization method and device obtained therefrom

Suppression of cross diffusion and gate depletion

Transistor formation for semiconductor devices

Structures comprising transistor gates

Applying epitaxial silicon in disposable spacer flow

Methods for making semiconductor structures having high-speed areas...

FET having epitaxial silicon growth

Cross-diffusion resistant dual-polycide semiconductor structure and...

Method of forming a field effect transistor

Cross-diffusion resistant dual-polycide semiconductor structure and...

Structures comprising transistor gates

Applying epitaxial silicon in disposable spacer flow

Methods of forming portions of transistor structures, methods of fo...

Patents Applicationslast 30 patents

MULTIPLE-DEPTH STI TRENCHES IN INTEGRATED CIRCUIT FABRICATION

Cross diffusion barrier layer in gate structure

Backend metallization method and device obtained therefrom

Applying epitaxial silicon in disposable spacer flow

Multiple-depth STI trenches in integrated circuit fabrication

Suppression of cross diffusion and gate depletion

Methods for making semiconductor structures having high-speed areas...

Apparatus for increasing SRAM cell capacitance with metal fill

Backend metallization method and device obtained therefrom

Cross diffusion barrier layer in polysilicon

Method of forming a field effect transistor

FET having epitaxial silicon growth

Applying epitaxial silicon in disposable spacer flow

Methods for making semiconductor structures having high-speed areas...

Methods of forming conductive contacts

Suppression of cross diffusion and gate depletion

Apparatus and method of increasing sram cell capacitance with metal...

Cross diffusion barrier layer in polysilicon

Transistor formation for semiconductor devices

Fet having epitaxial silicon growth

Methods of forming conductive contacts

Structures comprising transistor gates

Cross-diffusion resistant dual-polycide semiconductor structure and...

Methods for making semiconductor structures having high-speed areas...

CROSS-DIFFUSION RESISTANT DUAL-POLYCIDE SEMICONDUCTOR STRUCTURE AND...

Integrated circuitry

METHOD OF FORMING A FIELD EFFECT TRANSISTOR

Backend metallization method and device obtained therefrom

Applying epitaxial silicon in disposable spacer flow

Suppression of cross diffusion and gate depletion