Chii-Ming M. Wu

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Diffusion barrier layer in top electrode to increase break down vol...
- Patent number 12,261,197
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film structure for bond pad
- Patent number 12,249,586
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Julie Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a low forming voltage
- Patent number 12,239,035
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
Information Patent Grant
MIM capacitor with a symmetrical capacitor insulator structure
- Patent number 12,199,029
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,178,147
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
Information Patent Grant
Method for forming semiconductor structure
- Patent number 12,161,057
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Top-electrode barrier layer for RRAM
- Patent number 12,114,582
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data storage structure for improving memory cell reliability
- Patent number 12,102,019
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
Information Patent Grant
Rram structure
- Patent number 11,963,468
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device having isolation structures...
- Patent number 11,923,235
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing reflective structure
- Patent number 11,721,794
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chia-Hua Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data storage structure for improving memory cell reliability
- Patent number 11,716,913
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
Information Patent Grant
Top-electrode barrier layer for RRAM
- Patent number 11,716,915
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,637,240
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce breakdown failure in a MIM capacitor
- Patent number 11,594,593
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in top electrode to increase break down vol...
- Patent number 11,532,698
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a low forming voltage
- Patent number 11,527,717
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physical vapor deposition chamber with target surface morphology mo...
- Patent number 11,479,849
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
RRAM structure
- Patent number 11,482,668
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,476,416
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device having isolation structures...
- Patent number 11,450,555
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM capacitor with a symmetrical capacitor insulator structure
- Patent number 11,430,729
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film structure for bond pad
- Patent number 11,322,464
- Issue date May 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Julie Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data storage structure for improving memory cell reliability
- Patent number 11,309,491
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained gate semiconductor device with oxygen-doped interlayer die...
- Patent number 11,271,114
- Issue date Mar 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,257,997
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chia-Hua Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce breakdown failure in a MIM capacitor
- Patent number 11,152,455
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top-electrode barrier layer for RRAM
- Patent number 11,152,568
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wireless camera wafer for vacuum chamber diagnostics
- Patent number 11,131,025
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Chung Tsai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE
- Publication number 20250176447
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
Information Patent Application
MIM CAPACITOR WITH A SYMMETRICAL CAPACITOR INSULATOR STRUCTURE
- Publication number 20250105137
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250081864
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
Information Patent Application
FILM STRUCTURE FOR BOND PAD
- Publication number 20240387424
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Julie Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP-ELECTRODE BARRIER LAYER FOR RRAM
- Publication number 20240373763
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
Information Patent Application
RRAM STRUCTURE
- Publication number 20240224822
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY
- Publication number 20230345847
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
Information Patent Application
TOP-ELECTRODE BARRIER LAYER FOR RRAM
- Publication number 20230320241
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20230255125
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HSING-LIEN LIN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD TO REDUCE BREAKDOWN FAILURE IN A MIM CAPACITOR
- Publication number 20230187478
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230062897
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE
- Publication number 20220367810
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURES...
- Publication number 20220367248
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ta WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE
- Publication number 20220367805
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOL...
- Publication number 20220367607
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL VAPOR DEPOSITION CHAMBER WITH TARGET SURFACE MORPHOLOGY MO...
- Publication number 20220349045
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MIM CAPACITOR WITH A SYMMETRICAL CAPACITOR INSULATOR STRUCTURE
- Publication number 20220352065
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM STRUCTURE FOR BOND PAD
- Publication number 20220254744
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Julie Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY
- Publication number 20220238802
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING REFLECTIVE STRUCTURE
- Publication number 20220173290
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIA-HUA LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED GATE SEMICONDUCTOR DEVICE WITH DOPED INTERLAYER DIELECTRIC...
- Publication number 20220165882
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ta WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM CAPACITOR WITH A SYMMETRICAL CAPACITOR INSULATOR STRUCTURE
- Publication number 20220084935
- Publication date Mar 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE BREAKDOWN FAILURE IN A MIM CAPACITOR
- Publication number 20220069068
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP-ELECTRODE BARRIER LAYER FOR RRAM
- Publication number 20220069215
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20210202809
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIA-HUA LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURES...
- Publication number 20210202301
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ta WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE
- Publication number 20210159407
- Publication date May 27, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210135102
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- HSING-LIEN LIN
- G11 - INFORMATION STORAGE
Information Patent Application
FILM STRUCTURE FOR BOND PAD
- Publication number 20210098398
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Julie Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE BREAKDOWN FAILURE IN A MIM CAPACITOR
- Publication number 20210091169
- Publication date Mar 25, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS

Chii-Ming M. Wu

Person

Patents Grantslast 30 patents

Diffusion barrier layer in top electrode to increase break down vol...

Film structure for bond pad

Resistive memory cell having a low forming voltage

MIM capacitor with a symmetrical capacitor insulator structure

Semiconductor device and method for manufacturing the same

Method for forming semiconductor structure

Top-electrode barrier layer for RRAM

Strained gate semiconductor device having an interlayer dielectric...

Data storage structure for improving memory cell reliability

Rram structure

Method for forming semiconductor device having isolation structures...

Method for manufacturing reflective structure

Data storage structure for improving memory cell reliability

Top-electrode barrier layer for RRAM

Semiconductor structure and method for forming the same

Method to reduce breakdown failure in a MIM capacitor

Diffusion barrier layer in top electrode to increase break down vol...

Resistive memory cell having a low forming voltage

Physical vapor deposition chamber with target surface morphology mo...

RRAM structure

Semiconductor device and method for manufacturing the same

Method for forming semiconductor device having isolation structures...

MIM capacitor with a symmetrical capacitor insulator structure

Film structure for bond pad

Data storage structure for improving memory cell reliability

Strained gate semiconductor device with oxygen-doped interlayer die...

Semiconductor structure

Method to reduce breakdown failure in a MIM capacitor

Top-electrode barrier layer for RRAM

Wireless camera wafer for vacuum chamber diagnostics

Patents Applicationslast 30 patents

RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE

MIM CAPACITOR WITH A SYMMETRICAL CAPACITOR INSULATOR STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

FILM STRUCTURE FOR BOND PAD

TOP-ELECTRODE BARRIER LAYER FOR RRAM

RRAM STRUCTURE

DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY

TOP-ELECTRODE BARRIER LAYER FOR RRAM

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

METHOD TO REDUCE BREAKDOWN FAILURE IN A MIM CAPACITOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE

METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURES...

RRAM STRUCTURE

DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOL...

PHYSICAL VAPOR DEPOSITION CHAMBER WITH TARGET SURFACE MORPHOLOGY MO...

MIM CAPACITOR WITH A SYMMETRICAL CAPACITOR INSULATOR STRUCTURE

FILM STRUCTURE FOR BOND PAD

DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY

METHOD FOR MANUFACTURING REFLECTIVE STRUCTURE

STRAINED GATE SEMICONDUCTOR DEVICE WITH DOPED INTERLAYER DIELECTRIC...

MIM CAPACITOR WITH A SYMMETRICAL CAPACITOR INSULATOR STRUCTURE

METHOD TO REDUCE BREAKDOWN FAILURE IN A MIM CAPACITOR

TOP-ELECTRODE BARRIER LAYER FOR RRAM

SEMICONDUCTOR STRUCTURE

METHOD FOR FORMING SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURES...

RRAM STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

FILM STRUCTURE FOR BOND PAD

METHOD TO REDUCE BREAKDOWN FAILURE IN A MIM CAPACITOR