Chin-Che Tin

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Auburn, AL, US

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Patents Grantslast 30 patents

Information Patent Grant
Low temperature impurity doping of silicon carbide
- Patent number 7,999,268
- Issue date Aug 16, 2011
- Auburn University
- Chin-Che Tin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Patent number 7,727,340
- Issue date Jun 1, 2010
- Vanderbilt University
- Gilyong Y. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Patent number 7,235,438
- Issue date Jun 26, 2007
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of nitrogen at the silicon dioxide-silicon carbide intera...
- Patent number 6,939,756
- Issue date Sep 6, 2005
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low temperature impurity doping of silicon carbide
- Publication number 20090039469
- Publication date Feb 12, 2009
- Chin-Che Tin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Publication number 20080128709
- Publication date Jun 5, 2008
- Vanderbilt University
- Gilyong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inclusion of nitrogen at the silicon dioxide-silicon carbide interf...
- Publication number 20060024978
- Publication date Feb 2, 2006
- Vanderbilt University
- Gilyong Y. Chung
- H01 - BASIC ELECTRIC ELEMENTS