Ching-huang Lu

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Adaptive enhanced corrective read based on write and read temperature
- Patent number 12,242,755
- Issue date Mar 4, 2025
- Micron Technology, Inc.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Bias voltage schemes during pre-programming and programming phases
- Patent number 12,217,801
- Issue date Feb 4, 2025
- Micron Technology, Inc.
- Vinh Q. Diep
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive bitline voltage for memory operations
- Patent number 12,197,739
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Yu-Chung Lien
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D NAND memory with built-in capacitor
- Patent number 12,170,117
- Issue date Dec 17, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Early discharge sequences during read recovery to alleviate latent...
- Patent number 12,131,783
- Issue date Oct 29, 2024
- Micron Technology, Inc.
- Xiangyu Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory operation based on block-associated temperature
- Patent number 12,124,705
- Issue date Oct 22, 2024
- Micron Technology, Inc.
- Pitamber Shukla
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Adaptive erase pulse width modulation based on erase suspend during...
- Patent number 12,068,036
- Issue date Aug 20, 2024
- Micron Technology, Inc.
- Jiun-horng Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive time sense parameters and overdrive voltage parameters for...
- Patent number 12,026,394
- Issue date Jul 2, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Adaptive sensing time for memory operations
- Patent number 12,014,049
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Adaptive time sense parameters and overdrive voltage parameters for...
- Patent number 12,014,050
- Issue date Jun 18, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory read operation using a voltage pattern based on a read comma...
- Patent number 11,972,122
- Issue date Apr 30, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Detrapping electrons to prevent quick charge loss during program ve...
- Patent number 11,967,387
- Issue date Apr 23, 2024
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive enhanced corrective read based on write and read temperature
- Patent number 11,947,831
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Enhanced gradient seeding scheme during a program operation in a me...
- Patent number 11,901,010
- Issue date Feb 13, 2024
- Micron Technology, Inc.
- Vinh Q. Diep
- G11 - INFORMATION STORAGE
Information Patent Grant
Unselected sub-block source line and bit line pre-charging to reduc...
- Patent number 11,894,069
- Issue date Feb 6, 2024
- Micron Technology, Inc.
- Xiangyu Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Single photon avalanche diode device
- Patent number 11,742,449
- Issue date Aug 29, 2023
- ADAPS PHOTONICS INC.
- Ching-Ying Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single photon avalanche diode device
- Patent number 11,508,867
- Issue date Nov 22, 2022
- ADAPS PHOTONICS INC.
- Ching-Ying Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Detrapping electrons to prevent quick charge loss during program ve...
- Patent number 11,508,449
- Issue date Nov 22, 2022
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Modified verify scheme for programming a memory apparatus
- Patent number 11,244,734
- Issue date Feb 8, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Grant
Bonded three-dimensional memory devices and methods of making the s...
- Patent number 11,195,857
- Issue date Dec 7, 2021
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with silicided bit line contacts
- Patent number 11,183,509
- Issue date Nov 23, 2021
- Cypress Semiconductor Corporation
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-pass programming process for memory device which omits verify...
- Patent number 11,037,640
- Issue date Jun 15, 2021
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with compensation for program speed variations due to...
- Patent number 11,024,387
- Issue date Jun 1, 2021
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with drain-select-level isolation s...
- Patent number 10,943,917
- Issue date Mar 9, 2021
- SanDisk Technologies LLC
- Takaaki Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with compensation for erase speed variations due to b...
- Patent number 10,923,197
- Issue date Feb 16, 2021
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with compensation for program speed variations due to...
- Patent number 10,878,914
- Issue date Dec 29, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-state programming in memory device with loop-dependent bit li...
- Patent number 10,854,300
- Issue date Dec 1, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-pass programming process for memory device which omits verify...
- Patent number 10,811,109
- Issue date Oct 20, 2020
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices using carbon-doped aluminum oxide...
- Patent number 10,804,282
- Issue date Oct 13, 2020
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppressing program disturb during program recovery in memory device
- Patent number 10,762,973
- Issue date Sep 1, 2020
- SanDisk Technologies LLC
- Ching-Huang Lu
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MULTI-FINE PROGRAM SCHEME FOR RELIABILITY RISK WORD LINES
- Publication number 20250103412
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Yu-Chung LIEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS
- Publication number 20250103215
- Publication date Mar 27, 2025
- Micron Technology, Inc.
- Yu-Chung LIEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
READ VOLTAGE OVERDRIVE IN READ RECOVERY
- Publication number 20250037773
- Publication date Jan 30, 2025
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
EARLY DISCHARGE SEQUENCES DURING READ RECOVERY TO ALLEVIATE LATENT...
- Publication number 20250022513
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Xiangyu Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY OPERATION BASED ON BLOCK-ASSOCIATED TEMPERATURE
- Publication number 20250013370
- Publication date Jan 9, 2025
- Micron Technology, Inc.
- Pitamber Shukla
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR...
- Publication number 20240319881
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR...
- Publication number 20240311042
- Publication date Sep 19, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE SENSING TIME FOR MEMORY OPERATIONS
- Publication number 20240302967
- Publication date Sep 12, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DYNAMIC ERASE VOLTAGE STEP
- Publication number 20240281148
- Publication date Aug 22, 2024
- Micron Technology, Inc.
- Jiun-Horng Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMA...
- Publication number 20240256155
- Publication date Aug 1, 2024
- Micron Technology, Inc.
- Yu-Chung LIEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIE...
- Publication number 20240249776
- Publication date Jul 25, 2024
- Micron Technology, Inc.
- Vinh Quang Diep
- G11 - INFORMATION STORAGE
Information Patent Application
LOW PASS THROUGH VOLTAGE ON LOWER TIER WORDLINES FOR READ DISTURB I...
- Publication number 20240248637
- Publication date Jul 25, 2024
- Micron Technology, Inc.
- Go Shikata
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE
- Publication number 20240241664
- Publication date Jul 18, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
IMPLEMENTING GLOBAL WORDLINE BIAS VOLTAGES FOR READ STATE TRANSITIONS
- Publication number 20240242754
- Publication date Jul 18, 2024
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
MANAGING TRAP-UP IN A MEMORY SYSTEM
- Publication number 20240233842
- Publication date Jul 11, 2024
- Micron Technology, Inc.
- Pitamber Shukla
- G11 - INFORMATION STORAGE
Information Patent Application
OPTIMIZING DATA RELIABILITY USING ERASE RETENTION
- Publication number 20240176496
- Publication date May 30, 2024
- Micron Technology, Inc.
- Zhongguang XU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A ME...
- Publication number 20240120010
- Publication date Apr 11, 2024
- Micron Technology, Inc.
- Vinh Q. Diep
- G11 - INFORMATION STORAGE
Information Patent Application
ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE
- Publication number 20240096408
- Publication date Mar 21, 2024
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE PULSE LOOP DEPENDENT ADJUSTMENT OF SELECT GATE ERASE BIAS VOL...
- Publication number 20240071515
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGE...
- Publication number 20240071530
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
LOW STRESS REFRESH ERASE IN A MEMORY DEVICE
- Publication number 20240062827
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Ronit Roneel Prakash
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR...
- Publication number 20240061608
- Publication date Feb 22, 2024
- MICRON TECHNOLOGY, INC.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR...
- Publication number 20240061583
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Zhenming Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS
- Publication number 20240053901
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Yu-Chung LIEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE SENSING TIME FOR MEMORY OPERATIONS
- Publication number 20240053896
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Yu-Chung Lien
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
3D NAND MEMORY WITH BUILT-IN CAPACITOR
- Publication number 20240046998
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Yu-Chung LIEN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMA...
- Publication number 20240045601
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Yu-Chung LIEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FAST PROGRAM RECOVERY WITH REDUCED PROGRAMING DISTURBANCE IN A MEMO...
- Publication number 20240028253
- Publication date Jan 25, 2024
- Micron Technology, Inc.
- Avinash Rajagiri
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
OUT-OF-ORDER PROGRAMMING OF FIRST WORDLINE IN A PHYSICAL UNIT OF A...
- Publication number 20230418742
- Publication date Dec 28, 2023
- Micron Technology, Inc.
- Deping He
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY OPERATION BASED ON BLOCK-ASSOCIATED TEMPERATURE
- Publication number 20230418475
- Publication date Dec 28, 2023
- Micron Technology, Inc.
- Pitamber Shukla
- G06 - COMPUTING CALCULATING COUNTING

Ching-huang Lu

Person

Patents Grantslast 30 patents

Adaptive enhanced corrective read based on write and read temperature

Bias voltage schemes during pre-programming and programming phases

Adaptive bitline voltage for memory operations

3D NAND memory with built-in capacitor

Early discharge sequences during read recovery to alleviate latent...

Memory operation based on block-associated temperature

Adaptive erase pulse width modulation based on erase suspend during...

Adaptive time sense parameters and overdrive voltage parameters for...

Adaptive sensing time for memory operations

Adaptive time sense parameters and overdrive voltage parameters for...

Memory read operation using a voltage pattern based on a read comma...

Detrapping electrons to prevent quick charge loss during program ve...

Adaptive enhanced corrective read based on write and read temperature

Enhanced gradient seeding scheme during a program operation in a me...

Unselected sub-block source line and bit line pre-charging to reduc...

Single photon avalanche diode device

Single photon avalanche diode device

Detrapping electrons to prevent quick charge loss during program ve...

Modified verify scheme for programming a memory apparatus

Bonded three-dimensional memory devices and methods of making the s...

Non-volatile memory with silicided bit line contacts

Multi-pass programming process for memory device which omits verify...

Memory device with compensation for program speed variations due to...

Three-dimensional memory device with drain-select-level isolation s...

Memory device with compensation for erase speed variations due to b...

Memory device with compensation for program speed variations due to...

Multi-state programming in memory device with loop-dependent bit li...

Multi-pass programming process for memory device which omits verify...

Three-dimensional memory devices using carbon-doped aluminum oxide...

Suppressing program disturb during program recovery in memory device

Patents Applicationslast 30 patents

MULTI-FINE PROGRAM SCHEME FOR RELIABILITY RISK WORD LINES

ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS

READ VOLTAGE OVERDRIVE IN READ RECOVERY

EARLY DISCHARGE SEQUENCES DURING READ RECOVERY TO ALLEVIATE LATENT...

MEMORY OPERATION BASED ON BLOCK-ASSOCIATED TEMPERATURE

ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR...

ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR...

ADAPTIVE SENSING TIME FOR MEMORY OPERATIONS

DYNAMIC ERASE VOLTAGE STEP

MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMA...

DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIE...

LOW PASS THROUGH VOLTAGE ON LOWER TIER WORDLINES FOR READ DISTURB I...

ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE

IMPLEMENTING GLOBAL WORDLINE BIAS VOLTAGES FOR READ STATE TRANSITIONS

MANAGING TRAP-UP IN A MEMORY SYSTEM

OPTIMIZING DATA RELIABILITY USING ERASE RETENTION

ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A ME...

ENHANCED VALLEY TRACKING WITH TRIM SETTING UPDATES IN A MEMORY DEVICE

ERASE PULSE LOOP DEPENDENT ADJUSTMENT OF SELECT GATE ERASE BIAS VOL...

CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGE...

LOW STRESS REFRESH ERASE IN A MEMORY DEVICE

ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR...

ADAPTIVE TIME SENSE PARAMETERS AND OVERDRIVE VOLTAGE PARAMETERS FOR...

ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS

ADAPTIVE SENSING TIME FOR MEMORY OPERATIONS

3D NAND MEMORY WITH BUILT-IN CAPACITOR

MEMORY READ OPERATION USING A VOLTAGE PATTERN BASED ON A READ COMMA...

FAST PROGRAM RECOVERY WITH REDUCED PROGRAMING DISTURBANCE IN A MEMO...

OUT-OF-ORDER PROGRAMMING OF FIRST WORDLINE IN A PHYSICAL UNIT OF A...

MEMORY OPERATION BASED ON BLOCK-ASSOCIATED TEMPERATURE