Chingfu Lin

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Dual damascene partial gap fill polymer fabrication process
- Patent number 6,930,038
- Issue date Aug 16, 2005
- United Microelectronics Corp.
- Chingfu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for planarizing an oxide layer
- Patent number 6,399,506
- Issue date Jun 4, 2002
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chingfu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming dual damascene structure
- Patent number 6,350,681
- Issue date Feb 26, 2002
- United Microelectronics Corp.
- Anseime Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of protecting tungsten plug from corroding
- Patent number 6,277,742
- Issue date Aug 21, 2001
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Jung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and planarizing polysilicon layer
- Patent number 6,277,741
- Issue date Aug 21, 2001
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chingfu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming shallow trench isolation structure
- Patent number 6,261,921
- Issue date Jul 17, 2001
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ching-Lang Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming via
- Patent number 6,245,667
- Issue date Jun 12, 2001
- Semiconductor Manufacturing Corp.
- Ling-Sung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing floating gate of stacked-gate nonvolatile m...
- Patent number 6,232,184
- Issue date May 15, 2001
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ling-Sung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing CMP dishing effect
- Patent number 6,221,734
- Issue date Apr 24, 2001
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chingfu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a T-shaped plug having increased contact area
- Patent number 6,207,545
- Issue date Mar 27, 2001
- Taiwan Semiconductor Manufacturing Corporation
- Chingfu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing capacitance depletion during hemispherical grai...
- Patent number 6,162,732
- Issue date Dec 19, 2000
- Taiwan Semiconductor Manufacturing Corp
- Dahcheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing DRAM capacitor
- Patent number 6,162,679
- Issue date Dec 19, 2000
- Worldwide Semiconductor Manufacturing Corp.
- Chingfu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating landing pad
- Patent number 6,159,843
- Issue date Dec 12, 2000
- Worldwide Semiconductor Manufacturing Corp.
- Chingfu Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Dual damascene partial gap fill polymer fabrication process
- Publication number 20050085069
- Publication date Apr 21, 2005
- Chingfu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming an opening in polymer-based dielectric
- Publication number 20030199132
- Publication date Oct 23, 2003
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming an opening in polymer-based dielectric
- Publication number 20020177300
- Publication date Nov 28, 2002
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method of shallow trench isolation
- Publication number 20020137305
- Publication date Sep 26, 2002
- Bih-Tiao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PLANARIZING OXIDE LAYER
- Publication number 20010003066
- Publication date Jun 7, 2001
- CHINGFU LIN
- H01 - BASIC ELECTRIC ELEMENTS

Chingfu Lin

Person

Patents Grantslast 30 patents

Dual damascene partial gap fill polymer fabrication process

Method for planarizing an oxide layer

Method of forming dual damascene structure

Method of protecting tungsten plug from corroding

Method and planarizing polysilicon layer

Method of forming shallow trench isolation structure

Method of forming via

Method of manufacturing floating gate of stacked-gate nonvolatile m...

Method of reducing CMP dishing effect

Method for forming a T-shaped plug having increased contact area

Method for reducing capacitance depletion during hemispherical grai...

Method of manufacturing DRAM capacitor

Method of fabricating landing pad

Patents Applicationslast 30 patents

Dual damascene partial gap fill polymer fabrication process

Method for forming an opening in polymer-based dielectric

Method for forming an opening in polymer-based dielectric

Fabrication method of shallow trench isolation

METHOD FOR PLANARIZING OXIDE LAYER