Choonghyun Lee

Person

Chigasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Uniform interfacial layer on vertical fin sidewalls of vertical tra...
- Patent number 12,132,098
- Issue date Oct 29, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor having a wrap-around gate with bot...
- Patent number 12,094,949
- Issue date Sep 17, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned block for vertical FETs
- Patent number 12,009,395
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned top contact for vertical transistor
- Patent number 12,009,422
- Issue date Jun 11, 2024
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with late source/drain epitaxy
- Patent number 11,996,480
- Issue date May 28, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,990,530
- Issue date May 21, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with gate encapsulation layers
- Patent number 11,949,011
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor with punchthrough stop region
- Patent number 11,923,438
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,742,409
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen vacancy passivation in high-k dielectrics for vertical trans...
- Patent number 11,587,837
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked resistive memory with individual switch control
- Patent number 11,527,574
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Threshold voltage adjustment by inner spacer material selection
- Patent number 11,515,214
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20230282728
- Publication date Sep 7, 2023
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE PATTERNING FOR LOGIC AND SRAM IN NANOSHEET DEVICES
- Publication number 20230189496
- Publication date Jun 15, 2023
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS
- Publication number 20230178602
- Publication date Jun 8, 2023
- International Business Machines Corporation
- CHANRO PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR WITH GATE ENCAPSULATION LAYERS
- Publication number 20230170415
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-VT NANOSHEET DEVICES
- Publication number 20230154798
- Publication date May 18, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL FIELD EFFECT TRANSISTOR DEVICES
- Publication number 20230155009
- Publication date May 18, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR
- Publication number 20230144407
- Publication date May 11, 2023
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITAN...
- Publication number 20230142760
- Publication date May 11, 2023
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS HAVING DIFFERENT THRESH...
- Publication number 20230124673
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH TRI-LAYER BOTTOM DIELECTRIC ISOLATION
- Publication number 20230099214
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR HAVING A WRAP-AROUND GATE WITH BOT...
- Publication number 20230096125
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR WITH PUNCHTHROUGH STOP REGION
- Publication number 20230091621
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transistor with Late Source/Drain Epitaxy
- Publication number 20230072305
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BLOCK FOR VERTICAL FETS
- Publication number 20230055297
- Publication date Feb 23, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN VACANCY PASSIVATION IN HIGH-K DIELECTRICS FOR VERTICAL TRANS...
- Publication number 20220130732
- Publication date Apr 28, 2022
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM INTERFACIAL LAYER ON VERTICAL FIN SIDEWALLS OF VERTICAL TRA...
- Publication number 20220045196
- Publication date Feb 10, 2022
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20210305407
- Publication date Sep 30, 2021
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT BY INNER SPACER MATERIAL SELECTION
- Publication number 20210233818
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED RESISTIVE MEMORY WITH INDIVIDUAL SWITCH CONTROL
- Publication number 20210233960
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING

Choonghyun Lee

Person

Patents Grantslast 30 patents

Uniform interfacial layer on vertical fin sidewalls of vertical tra...

Fin-type field effect transistor having a wrap-around gate with bot...

Self-aligned block for vertical FETs

Self aligned top contact for vertical transistor

Vertical transistor with late source/drain epitaxy

Replacement-channel fabrication of III-V nanosheet devices

Vertical transistor with gate encapsulation layers

Field-effect transistor with punchthrough stop region

Replacement-channel fabrication of III-V nanosheet devices

Oxygen vacancy passivation in high-k dielectrics for vertical trans...

Stacked resistive memory with individual switch control

Threshold voltage adjustment by inner spacer material selection

Patents Applicationslast 30 patents

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

METAL GATE PATTERNING FOR LOGIC AND SRAM IN NANOSHEET DEVICES

METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS

VERTICAL TRANSISTOR WITH GATE ENCAPSULATION LAYERS

MULTI-VT NANOSHEET DEVICES

TUNNEL FIELD EFFECT TRANSISTOR DEVICES

SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR

VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITAN...

VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS HAVING DIFFERENT THRESH...

NANOSHEET DEVICE WITH TRI-LAYER BOTTOM DIELECTRIC ISOLATION

FIN-TYPE FIELD EFFECT TRANSISTOR HAVING A WRAP-AROUND GATE WITH BOT...

FIELD-EFFECT TRANSISTOR WITH PUNCHTHROUGH STOP REGION

Vertical Transistor with Late Source/Drain Epitaxy

SELF-ALIGNED BLOCK FOR VERTICAL FETS

OXYGEN VACANCY PASSIVATION IN HIGH-K DIELECTRICS FOR VERTICAL TRANS...

UNIFORM INTERFACIAL LAYER ON VERTICAL FIN SIDEWALLS OF VERTICAL TRA...

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

THRESHOLD VOLTAGE ADJUSTMENT BY INNER SPACER MATERIAL SELECTION

STACKED RESISTIVE MEMORY WITH INDIVIDUAL SWITCH CONTROL