Chris Bowen

Person

Mount Laurel, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including a repeater/buffer at upper metal rou...
- Patent number 11,404,405
- Issue date Aug 2, 2022
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of screening materials using forward conducting modes
- Patent number 11,087,055
- Issue date Aug 10, 2021
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including a repeater/buffer at upper metal rou...
- Patent number 10,854,591
- Issue date Dec 1, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k dielectric pore sealant and metal-diffusion barrier formed by...
- Patent number 10,510,665
- Issue date Dec 17, 2019
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unipolar complementary logic
- Patent number 10,153,368
- Issue date Dec 11, 2018
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial non-epitaxial gate stressors
- Patent number 9,893,187
- Issue date Feb 13, 2018
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with biaxial stressor layer
- Patent number 9,773,904
- Issue date Sep 26, 2017
- Samsung Electronics Co., Ltd.
- Borna Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed semiconductor layers with reduced defects and methods of fo...
- Patent number 9,773,906
- Issue date Sep 26, 2017
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxysilicate diffusion barriers for damascene metallization wi...
- Patent number 9,728,502
- Issue date Aug 8, 2017
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS compatible resonant interband tunneling cell
- Patent number 9,536,886
- Issue date Jan 3, 2017
- Samsung Electronics Co., Ltd.
- Christopher Bowen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-FET transistor with punchthrough barrier and leakage protection...
- Patent number 9,263,549
- Issue date Feb 16, 2016
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT UPPER METAL ROU...
- Publication number 20200381414
- Publication date Dec 3, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SCREENING MATERIALS USING FORWARD CONDUCTING MODES
- Publication number 20190155977
- Publication date May 23, 2019
- Samsung Electronics Co., Ltd.
- Ganesh Hegde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
UNIPOLAR COMPLEMENTARY LOGIC
- Publication number 20180254350
- Publication date Sep 6, 2018
- Samsung Electronics Co., Ltd.
- Ryan M. Hatcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT UPPER METAL ROU...
- Publication number 20180130785
- Publication date May 10, 2018
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL NON-EPITAXIAL GATE STRESSORS
- Publication number 20170345932
- Publication date Nov 30, 2017
- Samsung Electronics Co., Ltd.
- Jorge A. Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Field Effect Transistor with Biaxial Stressor Layer
- Publication number 20170077304
- Publication date Mar 16, 2017
- Samsung Electronics Co., Ltd.
- Borna Obradovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed Semiconductor Layers With Reduced Defects and Methods of Fo...
- Publication number 20160322493
- Publication date Nov 3, 2016
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS COMPATIBLE RESONANT INTERBAND TUNNELING CELL
- Publication number 20160260721
- Publication date Sep 8, 2016
- Christopher Bowen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-K DIELECTRIC PORE SEALANT AND METAL-DIFFUSION BARRIER FORMED BY...
- Publication number 20160148870
- Publication date May 26, 2016
- Samsung Electronics Co., Ltd.
- Ganesh HEGDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXYSILICATE DIFFUSION BARRIERS FOR DAMASCENE METALLIZATION WI...
- Publication number 20160133513
- Publication date May 12, 2016
- Samsung Electronics Co., Ltd.
- Ganesh HEGDE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-FET TRANSISTOR WITH PUNCHTHROUGH BARRIER AND LEAKAGE PROTECTION...
- Publication number 20140312393
- Publication date Oct 23, 2014
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS

Chris Bowen

Person

Patents Grantslast 30 patents

Semiconductor device including a repeater/buffer at upper metal rou...

Method of screening materials using forward conducting modes

Semiconductor device including a repeater/buffer at upper metal rou...

Low-k dielectric pore sealant and metal-diffusion barrier formed by...

Unipolar complementary logic

Sacrificial non-epitaxial gate stressors

Vertical field effect transistor with biaxial stressor layer

Relaxed semiconductor layers with reduced defects and methods of fo...

Metal oxysilicate diffusion barriers for damascene metallization wi...

CMOS compatible resonant interband tunneling cell

Fin-FET transistor with punchthrough barrier and leakage protection...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT UPPER METAL ROU...

METHOD OF SCREENING MATERIALS USING FORWARD CONDUCTING MODES

UNIPOLAR COMPLEMENTARY LOGIC

SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT UPPER METAL ROU...

SACRIFICIAL NON-EPITAXIAL GATE STRESSORS

Vertical Field Effect Transistor with Biaxial Stressor Layer

Relaxed Semiconductor Layers With Reduced Defects and Methods of Fo...

CMOS COMPATIBLE RESONANT INTERBAND TUNNELING CELL

LOW-K DIELECTRIC PORE SEALANT AND METAL-DIFFUSION BARRIER FORMED BY...

METAL OXYSILICATE DIFFUSION BARRIERS FOR DAMASCENE METALLIZATION WI...

FIN-FET TRANSISTOR WITH PUNCHTHROUGH BARRIER AND LEAKAGE PROTECTION...