Chris W. Hill

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of increasing deposition rate of silicon dioxide on a catalyst
- Patent number 8,470,686
- Issue date Jun 25, 2013
- Micron Technology, Inc.
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of increasing deposition rate of silicon dioxide on a catalyst
- Patent number 8,158,488
- Issue date Apr 17, 2012
- Micron Technology, Inc.
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for filling trenches in a semiconductor material
- Patent number 8,153,502
- Issue date Apr 10, 2012
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of increasing deposition rate of silicon dioxide on a catalyst
- Patent number 8,110,891
- Issue date Feb 7, 2012
- Micron Technology, Inc.
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a selective contact and local interconnect in situ
- Patent number 7,858,518
- Issue date Dec 28, 2010
- Micron Technology, Inc.
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming trench isolation and methods of forming floating...
- Patent number 7,846,812
- Issue date Dec 7, 2010
- Micron Technology, Inc.
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions, and methods of forming dielectric mate...
- Patent number 7,737,047
- Issue date Jun 15, 2010
- Micron Technology, Inc.
- Christopher W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Double-sided container capacitors using a sacrificial layer
- Patent number 7,667,258
- Issue date Feb 23, 2010
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing residual contaminants from an environment
- Patent number 7,611,971
- Issue date Nov 3, 2009
- Micron Technology, Inc.
- Demetrius Sarigiannis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of depositing a silicon dioxide comprising layer doped with...
- Patent number 7,470,632
- Issue date Dec 30, 2008
- Micron Technology, Inc.
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming trench isolation in the fabrication of integrated...
- Patent number 7,429,541
- Issue date Sep 30, 2008
- Micron Technology, Inc.
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Masking without photolithography during the formation of a semicond...
- Patent number 7,402,533
- Issue date Jul 22, 2008
- Micron Technology, Inc.
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing a silicon dioxide comprising layer in the fabr...
- Patent number 7,361,614
- Issue date Apr 22, 2008
- Micron Technology, Inc.
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Double-sided container capacitors using a sacrificial layer
- Patent number 7,329,576
- Issue date Feb 12, 2008
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nanocrystal capacitor and process for forming same
- Patent number 7,271,050
- Issue date Sep 18, 2007
- Micron Technology, Inc.
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing a silicon dioxide-comprising layer in the fabr...
- Patent number 7,250,380
- Issue date Jul 31, 2007
- Micron Technology, Inc.
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of depositing a silicon dioxide-comprising layer in the fabr...
- Patent number 7,250,378
- Issue date Jul 31, 2007
- Micron Technology, Inc.
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of removing residual contaminants from an environment
- Patent number 7,247,561
- Issue date Jul 24, 2007
- Micron Technology, Inc.
- Demetrius Sarigiannis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selectively deposited silicon oxide layers on a silicon substrate
- Patent number 7,214,979
- Issue date May 8, 2007
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of linear injectors to deposit uniform selective ozone TEOS oxi...
- Patent number 7,192,893
- Issue date Mar 20, 2007
- Micron Technology Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing devices comprising conductive nano-dots, an...
- Patent number 7,173,304
- Issue date Feb 6, 2007
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing a silicon dioxide-comprising layer in the fabr...
- Patent number 7,157,385
- Issue date Jan 2, 2007
- Micron Technology, Inc.
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Masking without photolithography during the formation of a semicond...
- Patent number 7,101,814
- Issue date Sep 5, 2006
- Micron Technology, Inc.
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of etching a contact opening over a node location on a semi...
- Patent number 6,982,228
- Issue date Jan 3, 2006
- Micron Technology, Inc.
- Mark E. Jost
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-layer dielectric and method of forming same
- Patent number 6,940,171
- Issue date Sep 6, 2005
- Micron Technology, Inc.
- Chris W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing a silicon dioxide comprising layer doped with...
- Patent number 6,930,058
- Issue date Aug 16, 2005
- Micron Technology, Inc.
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon nanocrystal capacitor and process for forming same
- Patent number 6,924,969
- Issue date Aug 2, 2005
- Micron Technology, Inc.
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer dielectric and method of forming same
- Patent number 6,905,956
- Issue date Jun 14, 2005
- Micron Technology, Inc.
- Chris W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching a contact opening
- Patent number 6,828,252
- Issue date Dec 7, 2004
- Micron Technology, Inc.
- Mark E. Jost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nanocrystal capacitor and process for forming same
- Patent number 6,808,983
- Issue date Oct 26, 2004
- Micron Technology, Inc.
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Increasing Deposition Rate of Silicon Dioxide on a Catalyst
- Publication number 20120202359
- Publication date Aug 9, 2012
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of Forming Trench Isolation and Methods of Forming Floating...
- Publication number 20090155980
- Publication date Jun 18, 2009
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor constructions, and methods of forming dielectric mate...
- Publication number 20080050928
- Publication date Feb 28, 2008
- Micron Technology, Inc.
- Christopher W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods for filling trenches in a semiconductor material
- Publication number 20070269958
- Publication date Nov 22, 2007
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-SIDED CONTAINER CAPACITORS USING A SACRIFICIAL LAYER
- Publication number 20070117335
- Publication date May 24, 2007
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Masking without photolithography during the formation of a semicond...
- Publication number 20060292893
- Publication date Dec 28, 2006
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING DEVICES COMPRISING CONDUCTIVE NANO-DOTS, AN...
- Publication number 20060273376
- Publication date Dec 7, 2006
- Ronald A. Weimer
- B82 - NANO-TECHNOLOGY
Information Patent Application
Inter-metal dielectric fill
- Publication number 20060265868
- Publication date Nov 30, 2006
- Neal R. Rueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-METAL DIELECTRIC FILL
- Publication number 20060246719
- Publication date Nov 2, 2006
- Micron Technology, Inc.
- Neal R. Rueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of removing residual contaminants from an environment
- Publication number 20060240646
- Publication date Oct 26, 2006
- Demetrius Sarigiannis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of depositing a silicon dioxide comprising layer in the fab...
- Publication number 20060189159
- Publication date Aug 24, 2006
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of depositing a silicon dioxide-comprising layer in the fabr...
- Publication number 20060189158
- Publication date Aug 24, 2006
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of depositing a silicon dioxide-comprising layer in the fabr...
- Publication number 20060183347
- Publication date Aug 17, 2006
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of increasing deposition rate of silicon dioxide on a catalyst
- Publication number 20060110936
- Publication date May 25, 2006
- Micron Technology, Inc.
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Double-sided container capacitors using a sacrificial layer
- Publication number 20060046419
- Publication date Mar 2, 2006
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of increasing deposition rate of silicon dioxide on a catalyst
- Publication number 20060046518
- Publication date Mar 2, 2006
- Micron Technology, Inc.
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Inter-metal dielectric fill
- Publication number 20060038293
- Publication date Feb 23, 2006
- Neal R. Rueger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of depositing a silicon dioxide comprising layer doped with...
- Publication number 20060035471
- Publication date Feb 16, 2006
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of etching a contact opening over a node location on a semi...
- Publication number 20060024973
- Publication date Feb 2, 2006
- Mark E. Jost
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming trench isolation in the fabrication of integrated...
- Publication number 20060008972
- Publication date Jan 12, 2006
- Garo J. Derderian
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Multi-layer dielectric and method of forming same
- Publication number 20050266676
- Publication date Dec 1, 2005
- Micron Technology, Inc.
- Chris W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon nanocrystal capacitor and process for forming same
- Publication number 20050264976
- Publication date Dec 1, 2005
- Christopher W. Hill
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of removing residual contaminants from an environment
- Publication number 20050126585
- Publication date Jun 16, 2005
- Demetrius Sarigiannis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Masking without photolithography during the formation of a semicond...
- Publication number 20050079733
- Publication date Apr 14, 2005
- Christopher W. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selectively deposited silicon oxide layers on a silicon substrate
- Publication number 20050035418
- Publication date Feb 17, 2005
- Micron Technology, Inc.
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon nanocrystal capacitor and process for forming same
- Publication number 20040264101
- Publication date Dec 30, 2004
- Christopher W. Hill
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of depositing a silicon dioxide comprising layer doped with...
- Publication number 20040209484
- Publication date Oct 21, 2004
- Chris W. Hill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of etching a contact opening
- Publication number 20040198061
- Publication date Oct 7, 2004
- Mark E. Jost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON NANOCRYSTAL CAPACITOR AND PROCESS FOR FORMING SAME
- Publication number 20040043577
- Publication date Mar 4, 2004
- Christopher W. Hill
- B82 - NANO-TECHNOLOGY
Information Patent Application
Use of linear injectors to deposit uniform selective ozone TEOS oxi...
- Publication number 20040029402
- Publication date Feb 12, 2004
- William Budge
- H01 - BASIC ELECTRIC ELEMENTS

Chris W. Hill

Person

Patents Grantslast 30 patents

Method of increasing deposition rate of silicon dioxide on a catalyst

Method of increasing deposition rate of silicon dioxide on a catalyst

Methods for filling trenches in a semiconductor material

Method of increasing deposition rate of silicon dioxide on a catalyst

Method for forming a selective contact and local interconnect in situ

Methods of forming trench isolation and methods of forming floating...

Semiconductor constructions, and methods of forming dielectric mate...

Double-sided container capacitors using a sacrificial layer

Method of removing residual contaminants from an environment

Method of depositing a silicon dioxide comprising layer doped with...

Method of forming trench isolation in the fabrication of integrated...

Masking without photolithography during the formation of a semicond...

Method of depositing a silicon dioxide comprising layer in the fabr...

Double-sided container capacitors using a sacrificial layer

Silicon nanocrystal capacitor and process for forming same

Method of depositing a silicon dioxide-comprising layer in the fabr...

Method of depositing a silicon dioxide-comprising layer in the fabr...

Method of removing residual contaminants from an environment

Selectively deposited silicon oxide layers on a silicon substrate

Use of linear injectors to deposit uniform selective ozone TEOS oxi...

Method of manufacturing devices comprising conductive nano-dots, an...

Method of depositing a silicon dioxide-comprising layer in the fabr...

Masking without photolithography during the formation of a semicond...

Methods of etching a contact opening over a node location on a semi...

Multi-layer dielectric and method of forming same

Method of depositing a silicon dioxide comprising layer doped with...

Silicon nanocrystal capacitor and process for forming same

Multi-layer dielectric and method of forming same

Method of etching a contact opening

Silicon nanocrystal capacitor and process for forming same

Patents Applicationslast 30 patents

Method of Increasing Deposition Rate of Silicon Dioxide on a Catalyst

Methods of Forming Trench Isolation and Methods of Forming Floating...

Semiconductor constructions, and methods of forming dielectric mate...

Methods for filling trenches in a semiconductor material

DOUBLE-SIDED CONTAINER CAPACITORS USING A SACRIFICIAL LAYER

Masking without photolithography during the formation of a semicond...

METHOD OF MANUFACTURING DEVICES COMPRISING CONDUCTIVE NANO-DOTS, AN...

Inter-metal dielectric fill

INTER-METAL DIELECTRIC FILL

Method of removing residual contaminants from an environment

Methods of depositing a silicon dioxide comprising layer in the fab...

Method of depositing a silicon dioxide-comprising layer in the fabr...

Method of depositing a silicon dioxide-comprising layer in the fabr...

Method of increasing deposition rate of silicon dioxide on a catalyst

Double-sided container capacitors using a sacrificial layer

Method of increasing deposition rate of silicon dioxide on a catalyst

Inter-metal dielectric fill

Method of depositing a silicon dioxide comprising layer doped with...

Methods of etching a contact opening over a node location on a semi...

Method of forming trench isolation in the fabrication of integrated...

Multi-layer dielectric and method of forming same

Silicon nanocrystal capacitor and process for forming same

Method of removing residual contaminants from an environment

Masking without photolithography during the formation of a semicond...

Selectively deposited silicon oxide layers on a silicon substrate

Silicon nanocrystal capacitor and process for forming same

Method of depositing a silicon dioxide comprising layer doped with...

Method of etching a contact opening

SILICON NANOCRYSTAL CAPACITOR AND PROCESS FOR FORMING SAME

Use of linear injectors to deposit uniform selective ozone TEOS oxi...