Christa Grabmaier

Person

Kempfenhausen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Phosphor having reduced afterglow
- Patent number 5,562,860
- Issue date Oct 8, 1996
- Siemens Aktiengesellschaft
- Christa Grabmaier
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Phosphor with an additive for reducing afterglow
- Patent number 5,560,867
- Issue date Oct 1, 1996
- Siemens Aktiengesellschaft
- Christa Grabmaier
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Phosphor having reduced afterglow and method for manufacturing same
- Patent number 5,518,658
- Issue date May 21, 1996
- Siemens Aktiengesellschaft
- Wolfgang Rossner
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method for manufacturing a phosphor having high translucency
- Patent number 5,518,659
- Issue date May 21, 1996
- Siemens Aktiengesellschaft
- Wolfgang Rossner
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Process for producing a phosphor layer by reacting a doped substanc...
- Patent number 5,399,185
- Issue date Mar 21, 1995
- Siemens Aktiengesellschaft
- Thomas Berthold
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Method for the manufacture of large area silicon crystal bodies for...
- Patent number 4,643,797
- Issue date Feb 17, 1987
- Siemens Aktiengesellschaft
- Christa Grabmaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method large-area silicon bodies
- Patent number 4,599,244
- Issue date Jul 8, 1986
- Siemens Aktiengesellschaft
- Richard Falckenberg
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making large-surface silicon crystal bodies
- Patent number 4,599,245
- Issue date Jul 8, 1986
- Siemens Aktiengesellschaft
- Richard Falckenberg
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing plate-, tape- or film-shaped Si crystal bodies...
- Patent number 4,357,200
- Issue date Nov 2, 1982
- Siemens Aktiengesellschaft
- Christa Grabmaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing plate-, tape- or film-shaped Si crystal bodies...
- Patent number 4,357,201
- Issue date Nov 2, 1982
- Siemens Aktiengesellschaft
- Christa Grabmaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing plate- or tape-shaped silicon crystal bodies ha...
- Patent number 4,330,358
- Issue date May 18, 1982
- Siemens Aktiengesellschaft
- Christa Grabmaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystalline Bi.sub.2 Ge.sub.3 O.sub.9 and its preparation
- Patent number 4,330,524
- Issue date May 18, 1982
- Siemens Aktiengesellschaft
- Christa Grabmaier
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electrophotographic element with bismuth oxide compound
- Patent number 4,254,200
- Issue date Mar 3, 1981
- Siemens Aktiengesellschaft
- Helmut Thomann
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of detecting high energy radiation via a bismuth oxide compound
- Patent number 4,227,084
- Issue date Oct 7, 1980
- Siemens Aktiengesellschaft
- Helmut Thomann
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Christa Grabmaier

Person

Patents Grantslast 30 patents

Phosphor having reduced afterglow

Phosphor with an additive for reducing afterglow

Phosphor having reduced afterglow and method for manufacturing same

Method for manufacturing a phosphor having high translucency

Process for producing a phosphor layer by reacting a doped substanc...

Method for the manufacture of large area silicon crystal bodies for...

Method large-area silicon bodies

Method for making large-surface silicon crystal bodies

Method for producing plate-, tape- or film-shaped Si crystal bodies...

Method for producing plate-, tape- or film-shaped Si crystal bodies...

Method of producing plate- or tape-shaped silicon crystal bodies ha...

Crystalline Bi.sub.2 Ge.sub.3 O.sub.9 and its preparation

Electrophotographic element with bismuth oxide compound

Method of detecting high energy radiation via a bismuth oxide compound