Christer Hallin

Person

Linkoping, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Homoepitaxial growth of SiC on low off-axis SiC wafers
- Patent number 8,492,772
- Issue date Jul 23, 2013
- Norstel AB
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial semiconductor structures having reduced stacking fault nu...
- Patent number 7,601,986
- Issue date Oct 13, 2009
- Cree, Inc.
- Christer Hallin
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Featuring forming methods to reduce stacking fault nucleation sites
- Patent number 7,396,410
- Issue date Jul 8, 2008
- Cree, Inc.
- Christer Hallin
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Sequential lithographic methods to reduce stacking fault nucleation...
- Patent number 7,226,805
- Issue date Jun 5, 2007
- Cree, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lithographic methods to reduce stacking fault nucleation sites
- Patent number 7,173,285
- Issue date Feb 6, 2007
- Cree, Inc.
- Christer Hallin
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide semiconductor structures including multiple epitaxi...
- Patent number 7,109,521
- Issue date Sep 19, 2006
- Cree, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and a device for epitaxial growth of objects by chemical vap...
- Patent number 6,093,253
- Issue date Jul 25, 2000
- ABB Research Ltd.
- Peter Lofgren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for epitaxially growing objects
- Patent number 6,048,398
- Issue date Apr 11, 2000
- ABB Research Ltd.
- Asko Erkki Vehanen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for epitaxially growing objects and method for such a growth
- Patent number 6,039,812
- Issue date Mar 21, 2000
- ABB Research Ltd.
- Alex Ellison
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and a method for epitaxially growing objects by CVD
- Patent number 6,030,661
- Issue date Feb 29, 2000
- ABB Research Ltd.
- Olle Kordina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for protecting the susceptor during epitaxial growth by CVD...
- Patent number 5,792,257
- Issue date Aug 11, 1998
- ABB Research Ltd.
- Olle Kordina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and a method for epitaxially growing objects by CVD
- Patent number 5,704,985
- Issue date Jan 6, 1998
- ABB Research Ltd.
- Olle Kordina
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
HOMOEPITAXIAL GROWTH OF SIC ON LOW OFF-AXIS SIC WAFERS
- Publication number 20090230406
- Publication date Sep 17, 2009
- NORSTEL AB
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SEMICONDUCTOR STRUCTURES HAVING REDUCED STACKING FAULT NU...
- Publication number 20070105349
- Publication date May 10, 2007
- Cree, Inc.
- Christer Hallin
- C30 - CRYSTAL GROWTH
Information Patent Application
FEATURE FORMING METHODS TO REDUCE STACKING FAULT NUCLEATION SITES
- Publication number 20070101930
- Publication date May 10, 2007
- Cree, Inc.
- Christer Hallin
- C30 - CRYSTAL GROWTH
Information Patent Application
Sequential Lithographic Methods to Reduce Stacking Fault Nucleation...
- Publication number 20060243985
- Publication date Nov 2, 2006
- Cree, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lithographic methods to reduce stacking fault nucleation sites and...
- Publication number 20050205871
- Publication date Sep 22, 2005
- Christer Hallin
- C30 - CRYSTAL GROWTH
Information Patent Application
Sequential lithographic methods to reduce stacking fault nucleation...
- Publication number 20050205872
- Publication date Sep 22, 2005
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS

Christer Hallin

Person

Patents Grantslast 30 patents

Homoepitaxial growth of SiC on low off-axis SiC wafers

Epitaxial semiconductor structures having reduced stacking fault nu...

Featuring forming methods to reduce stacking fault nucleation sites

Sequential lithographic methods to reduce stacking fault nucleation...

Lithographic methods to reduce stacking fault nucleation sites

Silicon carbide semiconductor structures including multiple epitaxi...

Method and a device for epitaxial growth of objects by chemical vap...

Device for epitaxially growing objects

Device for epitaxially growing objects and method for such a growth

Device and a method for epitaxially growing objects by CVD

Method for protecting the susceptor during epitaxial growth by CVD...

Device and a method for epitaxially growing objects by CVD

Patents Applicationslast 30 patents

HOMOEPITAXIAL GROWTH OF SIC ON LOW OFF-AXIS SIC WAFERS

EPITAXIAL SEMICONDUCTOR STRUCTURES HAVING REDUCED STACKING FAULT NU...

FEATURE FORMING METHODS TO REDUCE STACKING FAULT NUCLEATION SITES

Sequential Lithographic Methods to Reduce Stacking Fault Nucleation...

Lithographic methods to reduce stacking fault nucleation sites and...

Sequential lithographic methods to reduce stacking fault nucleation...