Christian Hecht

Person

Buckenhof, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a silicon carbide substrate for an electri...
- Patent number 11,721,547
- Issue date Aug 8, 2023
- Infineon Technologies AG
- Christian Hecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,158,557
- Issue date Oct 26, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicon carbide body and method of m...
- Patent number 11,063,142
- Issue date Jul 13, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a doped substrate layer and correspo...
- Patent number 10,411,097
- Issue date Sep 10, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for forming a silicon carbide d...
- Patent number 9,496,346
- Issue date Nov 15, 2016
- Infineon Technology AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for manufacturing a silicon car...
- Patent number 9,412,808
- Issue date Aug 9, 2016
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for forming a silicon carbide d...
- Patent number 9,257,511
- Issue date Feb 9, 2016
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for manufacturing a silicon car...
- Patent number 9,245,944
- Issue date Jan 26, 2016
- Infineon Technologies AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and a method for manufacturing a silicon car...
- Patent number 9,035,322
- Issue date May 19, 2015
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device with a Passivation Layer and Method for Produc...
- Publication number 20220005742
- Publication date Jan 6, 2022
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND METHOD OF M...
- Publication number 20200203513
- Publication date Jun 25, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter KONRATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer and Method for Produc...
- Publication number 20190252282
- Publication date Aug 15, 2019
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having a Doped Substrate Layer and Correspo...
- Publication number 20180158916
- Publication date Jun 7, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE D...
- Publication number 20160104779
- Publication date Apr 14, 2016
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED LAYER FOR SEMICONDUCTOR
- Publication number 20150364550
- Publication date Dec 17, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim SCHULZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Passivation Layer and Method for Produc...
- Publication number 20150255362
- Publication date Sep 10, 2015
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and a Method for Manufacturing a Silicon Car...
- Publication number 20150187871
- Publication date Jul 2, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and a Method for Manufacturing A Silicon Car...
- Publication number 20150008447
- Publication date Jan 8, 2015
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE D...
- Publication number 20140291697
- Publication date Oct 2, 2014
- INFINEON TECHNOLOGIES AG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and a Method for Manufacturing a Silicon Car...
- Publication number 20140291695
- Publication date Oct 2, 2014
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SILICON CARBIDE SUBSTRATE FOR AN ELECTRI...
- Publication number 20140264374
- Publication date Sep 18, 2014
- INFINEON TECHNOLOGIES AG
- Christian Hecht
- H01 - BASIC ELECTRIC ELEMENTS

Christian Hecht

Person

Patents Grantslast 30 patents

Semiconductor device with a passivation layer and method for produc...

Method for manufacturing a silicon carbide substrate for an electri...

Semiconductor device with a passivation layer and method for produc...

Semiconductor device including silicon carbide body and method of m...

Semiconductor component having a doped substrate layer and correspo...

Silicon carbide device and a method for forming a silicon carbide d...

Silicon carbide device and a method for manufacturing a silicon car...

Silicon carbide device and a method for forming a silicon carbide d...

Silicon carbide device and a method for manufacturing a silicon car...

Silicon carbide device and a method for manufacturing a silicon car...

Patents Applicationslast 30 patents

Semiconductor Device with a Passivation Layer and Method for Produc...

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND METHOD OF M...

Semiconductor Device with a Passivation Layer and Method for Produc...

Semiconductor Component Having a Doped Substrate Layer and Correspo...

SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE D...

OPTIMIZED LAYER FOR SEMICONDUCTOR

Semiconductor Device with a Passivation Layer and Method for Produc...

Silicon Carbide Device and a Method for Manufacturing a Silicon Car...

Silicon Carbide Device and a Method for Manufacturing A Silicon Car...

SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE D...

Silicon Carbide Device and a Method for Manufacturing a Silicon Car...

METHOD FOR MANUFACTURING A SILICON CARBIDE SUBSTRATE FOR AN ELECTRI...