Christian Jaeger

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device having a barrier region
- Patent number 12,034,066
- Issue date Jul 9, 2024
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 11,682,700
- Issue date Jun 20, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of processing a power semiconductor device
- Patent number 11,594,621
- Issue date Feb 28, 2023
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 11,581,428
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die, semiconductor device and IGBT module
- Patent number 11,257,914
- Issue date Feb 22, 2022
- Infineon Technologies AG
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a cross-trench arrangement
- Patent number 11,075,290
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 10,978,560
- Issue date Apr 13, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having a barrier region
- Patent number 10,930,772
- Issue date Feb 23, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having trench electrodes biased at three...
- Patent number 10,910,487
- Issue date Feb 2, 2021
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,854,739
- Issue date Dec 1, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,840,362
- Issue date Nov 17, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and enhancement cells wi...
- Patent number 10,825,906
- Issue date Nov 3, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,615,272
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor device
- Patent number 10,608,104
- Issue date Mar 31, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,439,055
- Issue date Oct 8, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability through selec...
- Patent number 10,347,754
- Issue date Jul 9, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and cross-tre...
- Patent number 10,304,952
- Issue date May 28, 2019
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device with an emitter having two types of emitt...
- Patent number 10,224,206
- Issue date Mar 5, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sensor potential in the active region
- Patent number 10,096,531
- Issue date Oct 9, 2018
- Infineon Technologies AG
- Christian Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit and method for driving a power semiconductor switch
- Patent number 10,033,370
- Issue date Jul 24, 2018
- Infineon Technologies AG
- Christian Jaeger
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with transistor cells and enhancement cells wi...
- Patent number 9,997,602
- Issue date Jun 12, 2018
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device with an emitter having two types of emitt...
- Patent number 9,741,571
- Issue date Aug 22, 2017
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with variable resistive element
- Patent number 9,691,887
- Issue date Jun 27, 2017
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a reverse blocking semiconductor device
- Patent number 9,679,892
- Issue date Jun 13, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an insulated gate bipolar transistor with m...
- Patent number 9,653,568
- Issue date May 16, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with auxiliary structure including deep level...
- Patent number 9,647,100
- Issue date May 9, 2017
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with transistor cells and thermoresistive ele...
- Patent number 9,576,944
- Issue date Feb 21, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device including charge storage structure
- Patent number 9,543,398
- Issue date Jan 10, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20230307499
- Publication date Sep 28, 2023
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Barrier Region
- Publication number 20230207673
- Publication date Jun 29, 2023
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210320174
- Publication date Oct 14, 2021
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Low Gate...
- Publication number 20210210604
- Publication date Jul 8, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die, Semiconductor Device and IGBT Module
- Publication number 20210119003
- Publication date Apr 22, 2021
- Vera Van Treek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Processing a Power Semiconductor Device
- Publication number 20210050436
- Publication date Feb 18, 2021
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20210043759
- Publication date Feb 11, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20200235232
- Publication date Jul 23, 2020
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having a Barrier Region
- Publication number 20200006539
- Publication date Jan 2, 2020
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY
- Publication number 20190319122
- Publication date Oct 17, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability and Low Gate Charge
- Publication number 20190305087
- Publication date Oct 3, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Cross-Trench Arrangement
- Publication number 20190273155
- Publication date Sep 5, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20190123185
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20190123186
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Cross-Tre...
- Publication number 20180342605
- Publication date Nov 29, 2018
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20180286971
- Publication date Oct 4, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and Enhancement Cells
- Publication number 20180277642
- Publication date Sep 27, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY
- Publication number 20180076309
- Publication date Mar 15, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Transistor Device With an Emitter Having Two Types of Emitt...
- Publication number 20180012764
- Publication date Jan 11, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Transistor Device With an Emitter Having Two Types of Emitt...
- Publication number 20160284803
- Publication date Sep 29, 2016
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Transistor Cells and Enhancement Cells
- Publication number 20160190123
- Publication date Jun 30, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with Transistor Cells and Thermoresistive Ele...
- Publication number 20160163689
- Publication date Jun 9, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Reverse Blocking Semiconductor Device
- Publication number 20160118382
- Publication date Apr 28, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Sensor Potential in the Active Region
- Publication number 20160099188
- Publication date Apr 7, 2016
- INFINEON TECHNOLOGIES AG
- Christian Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Variable Resistive Element
- Publication number 20160087005
- Publication date Mar 24, 2016
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING DEVICE INCLUDING CHARGE STORAGE STRUCTURE
- Publication number 20160056251
- Publication date Feb 25, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT AND METHOD FOR DRIVING A POWER SEMICONDUCTOR SWITCH
- Publication number 20150365083
- Publication date Dec 17, 2015
- INFINEON TECHNOLOGIES AG
- Christian Jaeger
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
TRENCH TRANSISTOR DEVICE
- Publication number 20150279985
- Publication date Oct 1, 2015
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing an Insulated Gate Bipolar Transistor with M...
- Publication number 20150270369
- Publication date Sep 24, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS

Christian Jaeger

Person

Patents Grantslast 30 patents

Power semiconductor device having a barrier region

Power semiconductor device with dV/dt controllability and low gate...

Power semiconductor switch having a cross-trench structure

Method of processing a power semiconductor device

IGBT with dV/dt controllability

Power semiconductor switch having a cross-trench structure

Semiconductor die, semiconductor device and IGBT module

Power semiconductor device having a cross-trench arrangement

Power semiconductor device with dV/dt controllability and low gate...

IGBT having a barrier region

Power semiconductor device having trench electrodes biased at three...

Method for producing IGBT with dV/dt controllability

IGBT with dV/dt controllability

Semiconductor device with transistor cells and enhancement cells wi...

Method for producing IGBT with dV/dt controllability

Trench transistor device

IGBT with dV/dt controllability

Power semiconductor device with dV/dt controllability through selec...

Power semiconductor device with dV/dt controllability and cross-tre...

Bipolar transistor device with an emitter having two types of emitt...

Semiconductor device with sensor potential in the active region

Circuit and method for driving a power semiconductor switch

Semiconductor device with transistor cells and enhancement cells wi...

Bipolar transistor device with an emitter having two types of emitt...

Semiconductor device with variable resistive element

Method of manufacturing a reverse blocking semiconductor device

Method of manufacturing an insulated gate bipolar transistor with m...

Semiconductor device with auxiliary structure including deep level...

Semiconductor devices with transistor cells and thermoresistive ele...

Semiconductor switching device including charge storage structure

Patents Applicationslast 30 patents

Power Semiconductor Device with dV/dt Controllability and Low Gate...

Power Semiconductor Device Having a Barrier Region

VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Power Semiconductor Switch Having a Cross-Trench Structure

Power Semiconductor Device with dV/dt Controllability and Low Gate...

Semiconductor Die, Semiconductor Device and IGBT Module

Method of Processing a Power Semiconductor Device

IGBT with dV/dt Controllability

Method for Producing IGBT with dV/dt Controllability

IGBT Having a Barrier Region

POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY

IGBT with dV/dt Controllability and Low Gate Charge

Power Semiconductor Device Having a Cross-Trench Arrangement

Method for Producing IGBT with dV/dt Controllability

IGBT with dV/dt Controllability

Power Semiconductor Device with dV/dt Controllability and Cross-Tre...

IGBT with dV/dt Controllability

Semiconductor Device with Transistor Cells and Enhancement Cells

POWER SEMICONDUCTOR DEVICE WITH DV/DT CONTROLLABILITY

Bipolar Transistor Device With an Emitter Having Two Types of Emitt...

Bipolar Transistor Device With an Emitter Having Two Types of Emitt...

Semiconductor Device with Transistor Cells and Enhancement Cells

Semiconductor Devices with Transistor Cells and Thermoresistive Ele...

Method of Manufacturing a Reverse Blocking Semiconductor Device

Semiconductor Device with Sensor Potential in the Active Region

Semiconductor Device with Variable Resistive Element

SEMICONDUCTOR SWITCHING DEVICE INCLUDING CHARGE STORAGE STRUCTURE

CIRCUIT AND METHOD FOR DRIVING A POWER SEMICONDUCTOR SWITCH

TRENCH TRANSISTOR DEVICE

Method of Manufacturing an Insulated Gate Bipolar Transistor with M...