Christian Philipp Sandow

Person

Haar, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including insulated gate bipolar transistor
- Patent number 12,224,316
- Issue date Feb 11, 2025
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a plurality of trenches
- Patent number 12,074,212
- Issue date Aug 27, 2024
- Infineon Technologies AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode including a plurality of trenches
- Patent number 11,869,985
- Issue date Jan 9, 2024
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor with one or more barrie...
- Patent number 11,610,976
- Issue date Mar 21, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 11,581,428
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor device and manufacturing method
- Patent number 11,575,032
- Issue date Feb 7, 2023
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode with structured barrier region
- Patent number 11,538,906
- Issue date Dec 27, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT
- Patent number 11,469,317
- Issue date Oct 11, 2022
- Infineon Technologies Austria AG
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including an anode contact region having a var...
- Patent number 11,444,158
- Issue date Sep 13, 2022
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT with an IGBT section and a diode section
- Patent number 11,398,472
- Issue date Jul 26, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting igbt having a reduced forward recovery voltage
- Patent number 11,296,213
- Issue date Apr 5, 2022
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,276,772
- Issue date Mar 15, 2022
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,264,459
- Issue date Mar 1, 2022
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having fully depleted channel regions
- Patent number 11,171,202
- Issue date Nov 9, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor device having a fin structure
- Patent number 11,038,016
- Issue date Jun 15, 2021
- Infineon Technologies AG
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Power semiconductor switch with improved controllability
- Patent number 11,011,629
- Issue date May 18, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor having first and second field sto...
- Patent number 11,004,963
- Issue date May 11, 2021
- Infineon Technologies AG
- Oana Julia Spulber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with fully depletable n- and p-channel regions
- Patent number 10,950,718
- Issue date Mar 16, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a barrier region
- Patent number 10,923,578
- Issue date Feb 16, 2021
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with fully depletable n- and p-channel regions
- Patent number 10,903,347
- Issue date Jan 26, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,840,362
- Issue date Nov 17, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar Transistor device having a fin structure
- Patent number 10,748,995
- Issue date Aug 18, 2020
- Infineon Technologies AG
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Power semiconductor device having different channel regions
- Patent number 10,672,767
- Issue date Jun 2, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor transistor
- Patent number 10,665,706
- Issue date May 26, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability
- Patent number 10,644,141
- Issue date May 5, 2020
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for self adaption of gate current controls by capacitance me...
- Patent number 10,469,057
- Issue date Nov 5, 2019
- Infineon Technologies Austria AG
- Wolfgang Frank
- G01 - MEASURING TESTING
Information Patent Grant
Power semiconductor device having cells with channel regions of dif...
- Patent number 10,453,918
- Issue date Oct 22, 2019
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having different channel regions
- Patent number 10,396,074
- Issue date Aug 27, 2019
- Infineon Technologies AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Insulated gate bipolar transistor device having a fin structure
- Patent number 10,388,734
- Issue date Aug 20, 2019
- Infineon Technologies AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having fully depleted channel regions
- Patent number 10,367,057
- Issue date Jul 30, 2019
- Infineon Technologies AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING FIRST TRENCHES WITH A GATE ELECTRODE AN...
- Publication number 20240413229
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE INCLUDING A DIODE AREA
- Publication number 20240332407
- Publication date Oct 3, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT
- Publication number 20240234414
- Publication date Jul 11, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT
- Publication number 20240136353
- Publication date Apr 25, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE INCLUDING A TRENCH ELECTRODE SUBDIVIDED INTO AT LEAST FIRST A...
- Publication number 20240088304
- Publication date Mar 14, 2024
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230290828
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS
- Publication number 20230197828
- Publication date Jun 22, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Insulated Gate Bipolar Transistor
- Publication number 20220376048
- Publication date Nov 24, 2022
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cell Design for MOS-controlled Power Semiconductor Device
- Publication number 20220320287
- Publication date Oct 6, 2022
- Thomas Kurzmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage-Controlled Switching Device with Resistive Path
- Publication number 20220102478
- Publication date Mar 31, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Nanometer-Scale Structure
- Publication number 20220059650
- Publication date Feb 24, 2022
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Including a Plurality of Trenches
- Publication number 20220045221
- Publication date Feb 10, 2022
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Plurality of Trenches
- Publication number 20220045200
- Publication date Feb 10, 2022
- INFINEON TECHNOLOGIES AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210359117
- Publication date Nov 18, 2021
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT
- Publication number 20210296479
- Publication date Sep 23, 2021
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Reverse-Conducting IGBT Having a Reduced Forward Recovery Voltage
- Publication number 20210296474
- Publication date Sep 23, 2021
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20210175329
- Publication date Jun 10, 2021
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR WITH ONE OR MORE BARRIE...
- Publication number 20210134977
- Publication date May 6, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT with an IGBT Section and a Diode Section
- Publication number 20210083081
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode with Structured Barrier Region
- Publication number 20210083051
- Publication date Mar 18, 2021
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20210043759
- Publication date Feb 11, 2021
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Device Having a Fin Structure
- Publication number 20200350402
- Publication date Nov 5, 2020
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Application
Power Semiconductor Device
- Publication number 20200259007
- Publication date Aug 13, 2020
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200194550
- Publication date Jun 18, 2020
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch with Improved Controllability
- Publication number 20200168727
- Publication date May 28, 2020
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Different Channel Regions
- Publication number 20190371794
- Publication date Dec 5, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Device Having a Fin Structure
- Publication number 20190333991
- Publication date Oct 31, 2019
- Christian Philipp Sandow
- B82 - NANO-TECHNOLOGY
Information Patent Application
Power Semiconductor Transistor
- Publication number 20190296135
- Publication date Sep 26, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Fully Depleted Channel Regions
- Publication number 20190267447
- Publication date Aug 29, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability
- Publication number 20190214490
- Publication date Jul 11, 2019
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS

Christian Philipp Sandow

Person

Patents Grantslast 30 patents

Semiconductor device including insulated gate bipolar transistor

Semiconductor device including a plurality of trenches

Diode including a plurality of trenches

Semiconductor device including a transistor with one or more barrie...

IGBT with dV/dt controllability

Vertical power semiconductor device and manufacturing method

Diode with structured barrier region

RC IGBT

Semiconductor device including an anode contact region having a var...

RC IGBT with an IGBT section and a diode section

Reverse-conducting igbt having a reduced forward recovery voltage

Power semiconductor device

Power semiconductor device

Power semiconductor device having fully depleted channel regions

Insulated gate bipolar transistor device having a fin structure

Power semiconductor switch with improved controllability

Insulated gate bipolar transistor having first and second field sto...

IGBT with fully depletable n- and p-channel regions

Semiconductor device comprising a barrier region

IGBT with fully depletable n- and p-channel regions

IGBT with dV/dt controllability

Insulated gate bipolar Transistor device having a fin structure

Power semiconductor device having different channel regions

Power semiconductor transistor

Power semiconductor device with dV/dt controllability

Method for self adaption of gate current controls by capacitance me...

Power semiconductor device having cells with channel regions of dif...

Power semiconductor device having different channel regions

Insulated gate bipolar transistor device having a fin structure

Power semiconductor device having fully depleted channel regions

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING FIRST TRENCHES WITH A GATE ELECTRODE AN...

POWER SEMICONDUCTOR DEVICE INCLUDING A DIODE AREA

RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT

RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT

DIODE INCLUDING A TRENCH ELECTRODE SUBDIVIDED INTO AT LEAST FIRST A...

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS

Semiconductor Device Including Insulated Gate Bipolar Transistor

Cell Design for MOS-controlled Power Semiconductor Device

Voltage-Controlled Switching Device with Resistive Path

Power Semiconductor Device Having Nanometer-Scale Structure

Diode Including a Plurality of Trenches

Semiconductor Device Including a Plurality of Trenches

VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

RC IGBT

Reverse-Conducting IGBT Having a Reduced Forward Recovery Voltage

SEMICONDUCTOR DEVICE INCLUDING INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR WITH ONE OR MORE BARRIE...

RC IGBT with an IGBT Section and a Diode Section

Diode with Structured Barrier Region

IGBT with dV/dt Controllability

Insulated Gate Bipolar Transistor Device Having a Fin Structure

Power Semiconductor Device

Power Semiconductor Device

Power Semiconductor Switch with Improved Controllability

Power Semiconductor Device Having Different Channel Regions

Insulated Gate Bipolar Transistor Device Having a Fin Structure

Power Semiconductor Transistor

Power Semiconductor Device Having Fully Depleted Channel Regions

Power Semiconductor Device with dV/dt Controllability