Christoph Ellmers

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Dresden, DE

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Patents Grantslast 30 patents

Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 12,113,106
- Issue date Oct 8, 2024
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 11,522,053
- Issue date Dec 6, 2022
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar integration without additional masking steps
- Patent number 8,405,157
- Issue date Mar 26, 2013
- X-Fab Semiconductor Foundries AG.
- Thomas Uhlig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with integrated hall effect sensor
- Patent number 8,222,679
- Issue date Jul 17, 2012
- X-Fab Semiconductor Foundries AG.
- Thomas Uhlig
- G01 - MEASURING TESTING
Information Patent Grant
Mask-saving production of complementary lateral high-voltage transi...
- Patent number 8,207,031
- Issue date Jun 26, 2012
- X-Fab Semiconductor Foundries AG.
- Christoph Ellmers
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE
- Publication number 20230054381
- Publication date Feb 23, 2023
- Amplexia, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE
- Publication number 20220181444
- Publication date Jun 9, 2022
- Silicet, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH INTEGRATED HALL EFFECT SENSOR
- Publication number 20110127583
- Publication date Jun 2, 2011
- X-FAB SEMICONDUCTOR FOUNDRIES AG.
- Thomas Uhlig
- G01 - MEASURING TESTING
Information Patent Application
MASK-SAVING PRODUCTION OF COMPLEMENTARY LATERAL HIGH-VOLTAGE TRANSI...
- Publication number 20100311214
- Publication date Dec 9, 2010
- X-FAB SEMICONDUCTOR FOUNDRIES
- Christoph Ellmers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HIGH-VOLTAGE MOS TRANSISTOR WITH A RESURF STRUCTURE
- Publication number 20100148255
- Publication date Jun 17, 2010
- Felix Fuernhammer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR INTEGRATION WITHOUT ADDITIONAL MASKING STEPS
- Publication number 20100148276
- Publication date Jun 17, 2010
- X-FAB SEMICONDUCTOR FOUNDRIES
- Thomas Uhlig
- H01 - BASIC ELECTRIC ELEMENTS