Christoph Gruber

Person

Wernberg, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices having field electrode trenches
- Patent number 10,403,728
- Issue date Sep 3, 2019
- Infineon Technologies Austria AG
- Michael Hutzler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor devices, semiconductor devices an...
- Patent number 10,199,468
- Issue date Feb 5, 2019
- Infineon Technologies Austra AG
- Michael Hutzler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench using epitaxial lateral overgrowth
- Patent number 9,768,273
- Issue date Sep 19, 2017
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a trench using epitaxial lateral overgrowth and d...
- Patent number 9,379,196
- Issue date Jun 28, 2016
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE FOR CONTROLLING TRAPPED IONS WITH AN ELECTRODE LAYER OF LOW...
- Publication number 20240249932
- Publication date Jul 25, 2024
- Infineon Technologies Austria AG
- Clemens Rössler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device and Method for Forming a Recess for a Trench Gate...
- Publication number 20200111896
- Publication date Apr 9, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Having Field Electrode Trenches
- Publication number 20190140059
- Publication date May 9, 2019
- Michael Hutzler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Devices, Semiconductor Devices an...
- Publication number 20170330941
- Publication date Nov 16, 2017
- Infineon Technologies Austria AG
- Michael Hutzler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Semiconductor Devices
- Publication number 20170110331
- Publication date Apr 20, 2017
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Method for Forming Semiconductor Devices
- Publication number 20170005091
- Publication date Jan 5, 2017
- Infineon Technologies Austria AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Trench Using Epitaxial Lateral Overgrowth
- Publication number 20160308028
- Publication date Oct 20, 2016
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Trench Using Epitaxial Lateral Overgrowth and D...
- Publication number 20150221735
- Publication date Aug 6, 2015
- Infineon Technologies Austria AG
- Ravi Joshi
- H01 - BASIC ELECTRIC ELEMENTS

Christoph Gruber

Person

Patents Grantslast 30 patents

Semiconductor devices having field electrode trenches

Methods for forming semiconductor devices, semiconductor devices an...

Method of forming a trench using epitaxial lateral overgrowth

Method of forming a trench using epitaxial lateral overgrowth and d...

Patents Applicationslast 30 patents

DEVICE FOR CONTROLLING TRAPPED IONS WITH AN ELECTRODE LAYER OF LOW...

Transistor Device and Method for Forming a Recess for a Trench Gate...

Semiconductor Devices Having Field Electrode Trenches

Methods for Forming Semiconductor Devices, Semiconductor Devices an...

Methods for Forming Semiconductor Devices

Semiconductor Devices and Method for Forming Semiconductor Devices

Method of Forming a Trench Using Epitaxial Lateral Overgrowth

Method of Forming a Trench Using Epitaxial Lateral Overgrowth and D...