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Christoph Schwan
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Dresden, DE
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Patents Grants
last 30 patents
Information
Patent Grant
SOI device with a buried insulating material having increased etch...
Patent number
8,617,940
Issue date
Dec 31, 2013
Advanced Micro Devices, Inc.
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Methods of forming efuse devices
Patent number
8,609,485
Issue date
Dec 17, 2013
GLOBALFOUNDRIES Inc.
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Electronic fuse structure formed using a metal gate electrode mater...
Patent number
8,564,089
Issue date
Oct 22, 2013
GLOBALFOUNDRIES Inc.
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device comprising a silicon/germanium resistor
Patent number
8,193,066
Issue date
Jun 5, 2012
GLOBALFOUNDRIES Inc.
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device comprising isolation trenches inducing differe...
Patent number
8,138,571
Issue date
Mar 20, 2012
GLOBALFOUNDRIES Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of creating a strained channel region in a transistor by dee...
Patent number
8,110,487
Issue date
Feb 7, 2012
Advanced Micro Devices, Inc.
Uwe Griebenow
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for patterning contact etch stop layers by using a planariza...
Patent number
7,838,354
Issue date
Nov 23, 2010
Advanced Micro Devices, Inc.
Kai Frohberg
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Technique for forming contact insulation layers and silicide region...
Patent number
7,838,359
Issue date
Nov 23, 2010
Advanced Micro Devices, Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device including a vertical decoupling capacitor
Patent number
7,713,815
Issue date
May 11, 2010
GLOBALFOUNDRIES Inc.
Matthias Lehr
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of increasing transistor drive current by recessing an isola...
Patent number
7,659,170
Issue date
Feb 9, 2010
GLOBALFOUNDRIES, INC.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Field effect transistor having a stressed dielectric layer based on...
Patent number
7,563,731
Issue date
Jul 21, 2009
Advanced Micro Devices, Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Field effect transistor comprising a stressed channel region and me...
Patent number
7,556,996
Issue date
Jul 7, 2009
Advanced Micro Devices, Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making a semiconductor device comprising isolation trench...
Patent number
7,547,610
Issue date
Jun 16, 2009
Advanced Micro Devices, Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of depositing a layer of a material on a substrate
Patent number
7,338,872
Issue date
Mar 4, 2008
Advanced Micro Devices, Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming sidewall spacer elements for a circuit element by...
Patent number
7,192,881
Issue date
Mar 20, 2007
Advanced Micro Devices, Inc.
Thorsten Kammler
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of compensating for etch rate non-uniformities by ion implan...
Patent number
7,098,140
Issue date
Aug 29, 2006
Advanced Micro Devices, Inc.
Matthias Schaller
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a conformal spacer adjacent to a gate electrode s...
Patent number
7,064,071
Issue date
Jun 20, 2006
Advanced Micro Devices, Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Signal layer for generating characteristic optical plasma emissions
Patent number
7,005,305
Issue date
Feb 28, 2006
Advanced Micro Devices, Inc.
Gunter Grasshoff
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Technique for forming recessed sidewall spacers for a polysilicon line
Patent number
7,005,358
Issue date
Feb 28, 2006
Advanced Micro Devices, Inc.
Thorsten Kammler
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of adjusting etch selectivity by adapting aspect ratios in a...
Patent number
6,969,676
Issue date
Nov 29, 2005
Advanced Micro Devices, Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for formation of a differential offset spacer
Patent number
6,696,334
Issue date
Feb 24, 2004
Advanced Micro Devices, Inc.
Kay Hellig
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for enhancing shallow trench top corner rounding using endpo...
Patent number
6,579,801
Issue date
Jun 17, 2003
Advanced Micro Devices, Inc.
Srikanteswara Dakshina-Murthy
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Method of Forming a Semiconductor Device Comprising eFuses of Incre...
Publication number
20120164799
Publication date
Jun 28, 2012
GLOBALFOUNDRIES INC.
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTU...
Publication number
20110241124
Publication date
Oct 6, 2011
GLOBALFOUNDRIES INC.
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ALUMINUM FUSES IN A SEMICONDUCTOR DEVICE COMPRISING METAL GATE ELEC...
Publication number
20110241086
Publication date
Oct 6, 2011
GLOBALFOUNDRIES Inc.
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR RESISTORS FORMED IN A SEMICONDUCTOR DEVICE COMPRISING...
Publication number
20110186916
Publication date
Aug 4, 2011
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SOI DEVICE WITH A BURIED INSULATING MATERIAL HAVING INCREASED ETCH...
Publication number
20100163994
Publication date
Jul 1, 2010
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE COMPRISING A SILICON/GERMANIUM RESISTOR
Publication number
20100025772
Publication date
Feb 4, 2010
Andreas Kurz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...
Publication number
20090236667
Publication date
Sep 24, 2009
Advanced Micro Devices, Inc.
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF CREATING A STRAINED CHANNEL REGION IN A TRANSISTOR BY DEE...
Publication number
20090194789
Publication date
Aug 6, 2009
Uwe Griebenow
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...
Publication number
20080079085
Publication date
Apr 3, 2008
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIELD EFFECT TRANSISTOR COMPRISING A STRESSED CHANNEL REGION AND ME...
Publication number
20080079039
Publication date
Apr 3, 2008
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIELD EFFECT TRANSISTOR HAVING A STRESSED DIELECTRIC LAYER BASED ON...
Publication number
20080081486
Publication date
Apr 3, 2008
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PATTERNING CONTACT ETCH STOP LAYERS BY USING A PLANARIZA...
Publication number
20080057720
Publication date
Mar 6, 2008
Kai Frohberg
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD OF INCREASING TRANSISTOR DRIVE CURRENT BY RECESSING AN ISOLA...
Publication number
20070278596
Publication date
Dec 6, 2007
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE INCLUDING A VERTICAL DECOUPLING CAPACITOR
Publication number
20070001203
Publication date
Jan 4, 2007
MATTHIAS LEHR
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TECHNIQUE FOR FORMING CONTACT INSULATION LAYERS AND SILICIDE REGION...
Publication number
20070001233
Publication date
Jan 4, 2007
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of forming sidewall spacers
Publication number
20050233532
Publication date
Oct 20, 2005
Markus Lenski
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of depositing a layer of a material on a substrate
Publication number
20050170660
Publication date
Aug 4, 2005
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of forming sidewall spacer elements for a circuit element by...
Publication number
20050118769
Publication date
Jun 2, 2005
Thorsten Kammler
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of forming a conformal spacer adjacent to a gate electrode s...
Publication number
20050048753
Publication date
Mar 3, 2005
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Technique for forming recessed sidewall spacers for a polysilicon line
Publication number
20050026380
Publication date
Feb 3, 2005
Thorsten Kammler
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of compensating for etch rate non-uniformities by ion implan...
Publication number
20040266200
Publication date
Dec 30, 2004
Matthias Schaller
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of forming a substrate contact for an SOI semiconductor device
Publication number
20040241917
Publication date
Dec 2, 2004
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of adjusting etch selectivity by adapting aspect ratios in a...
Publication number
20040241984
Publication date
Dec 2, 2004
Christoph Schwan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Plasma parameter control using learning data
Publication number
20040118516
Publication date
Jun 24, 2004
Gunter Grasshoff
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Signal layer for generating characteristic optical plasma emissions
Publication number
20040106284
Publication date
Jun 3, 2004
Gunter Grasshoff
H01 - BASIC ELECTRIC ELEMENTS