Christoph Weiss

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate bipolar transistor having first and second field sto...
- Patent number 11,004,963
- Issue date May 11, 2021
- Infineon Technologies AG
- Oana Julia Spulber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device
- Patent number 10,957,764
- Issue date Mar 23, 2021
- Infineon Technologies AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a power semiconductor device
- Patent number 10,529,809
- Issue date Jan 7, 2020
- Infineon Technologies AG
- Matthias Kuenle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Producing a semiconductor device by epitaxial growth
- Patent number 10,243,066
- Issue date Mar 26, 2019
- Infineon Technologies Austria AG
- Daniel Schloegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,186,587
- Issue date Jan 22, 2019
- Infineon Technologies AG
- Matthias Kuenle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and integrated circuit
- Patent number 9,825,136
- Issue date Nov 21, 2017
- Infineon Technologies Austria AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor to metal transition for semiconductor devices
- Patent number 9,685,504
- Issue date Jun 20, 2017
- Infineon Technologies AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Producing a semiconductor device by epitaxial growth
- Patent number 9,647,083
- Issue date May 9, 2017
- Infineon Technologies Austria AG
- Daniel Schloegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor to metal transition
- Patent number 9,443,971
- Issue date Sep 13, 2016
- Infineon Technologies AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Insulated Gate Bipolar Transistor Having First and Second Field Sto...
- Publication number 20190165151
- Publication date May 30, 2019
- Oana Julia Spulber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Power Semiconductor Device
- Publication number 20190157401
- Publication date May 23, 2019
- Matthias Kuenle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20170373157
- Publication date Dec 28, 2017
- INFINEON TECHNOLOGIES AG
- Matthias Kuenle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Producing a Semiconductor Device by Epitaxial Growth
- Publication number 20170243963
- Publication date Aug 24, 2017
- INFINEON TECHNOLOGIES AG
- Daniel Schloegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor to Metal Transition for Semiconductor Devices
- Publication number 20160372539
- Publication date Dec 22, 2016
- INFINEON TECHNOLOGIES AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Producing a Semiconductor Device by Epitaxial Growth
- Publication number 20160322472
- Publication date Nov 3, 2016
- INFINEON TECHNOLOGIES AG
- Daniel Schloegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor to Metal Transition
- Publication number 20160141406
- Publication date May 19, 2016
- INFINEON TECHNOLOGIES AG
- Andreas Haertl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Semiconductor Device
- Publication number 20150303260
- Publication date Oct 22, 2015
- INFINEON TECHNOLOGIES AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND INTEGRATED CIRCUIT
- Publication number 20150263106
- Publication date Sep 17, 2015
- Infineon Technologies Austria AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS

Christoph Weiss

Person

Patents Grantslast 30 patents

Insulated gate bipolar transistor having first and second field sto...

Vertical semiconductor device

Method of manufacturing a power semiconductor device

Producing a semiconductor device by epitaxial growth

Power semiconductor device

Semiconductor component and integrated circuit

Semiconductor to metal transition for semiconductor devices

Producing a semiconductor device by epitaxial growth

Semiconductor to metal transition

Patents Applicationslast 30 patents

Insulated Gate Bipolar Transistor Having First and Second Field Sto...

Method of Manufacturing a Power Semiconductor Device

Power Semiconductor Device

Producing a Semiconductor Device by Epitaxial Growth

Semiconductor to Metal Transition for Semiconductor Devices

Producing a Semiconductor Device by Epitaxial Growth

Semiconductor to Metal Transition

Vertical Semiconductor Device

SEMICONDUCTOR COMPONENT AND INTEGRATED CIRCUIT