Christopher C. Hobbs

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective metal oxide removal performed in a reaction chamber in th...
- Patent number 6,818,493
- Issue date Nov 16, 2004
- Motorola, Inc.
- Christopher C. Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a dual gate oxide device using a metal oxide and...
- Patent number 6,787,421
- Issue date Sep 7, 2004
- FREESCALE SEMICONDUCTOR, INC.
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with layered high-K gate dielectric and method therefor
- Patent number 6,717,226
- Issue date Apr 6, 2004
- Motorola, Inc.
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of recrystallizing an amorphous region of a semiconductor
- Patent number 6,573,160
- Issue date Jun 3, 2003
- Motorola, Inc.
- William J. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a high K dielectric and short gate length and met...
- Patent number 6,514,808
- Issue date Feb 4, 2003
- Motorola, Inc.
- Srikanth B. Samavedam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device
- Patent number 6,465,853
- Issue date Oct 15, 2002
- Motorola, Inc.
- Christopher C. Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of a metal oxide dielectric
- Patent number 6,432,779
- Issue date Aug 13, 2002
- Motorola, Inc.
- Christopher Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of a metal oxide dielectric
- Patent number 6,300,202
- Issue date Oct 9, 2001
- Motorola Inc.
- Christopher C. Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallic oxide gate electrode stack having a metallic gate dielectr...
- Patent number 6,294,820
- Issue date Sep 25, 2001
- Motorola, Inc.
- Kevin Lucas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a high-K gate dielectric
- Patent number 6,184,072
- Issue date Feb 6, 2001
- Motorola, Inc.
- Vidya S. Kaushik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device
- Patent number 6,171,910
- Issue date Jan 9, 2001
- Motorola Inc.
- Christopher C. Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS semiconductor devices and method of formation
- Patent number 6,027,961
- Issue date Feb 22, 2000
- Motorola, Inc.
- Bikas Maiti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum oxide anti-reflective coating (ARC) integrated with a meta...
- Patent number 6,004,850
- Issue date Dec 21, 1999
- Motorola Inc.
- Kevin Lucas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an MOS transistor having a metallic gate electro...
- Patent number 5,960,270
- Issue date Sep 28, 1999
- Motorola, Inc.
- Veena Misra
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for forming a dual gate oxide device using a metal oxide and...
- Publication number 20040032001
- Publication date Feb 19, 2004
- David C. Gilmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate dielectric and method therefor
- Publication number 20030176049
- Publication date Sep 18, 2003
- Rama I. Hegde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Amorphous metal oxide gate dielectric structure and method thereof
- Publication number 20030054669
- Publication date Mar 20, 2003
- Prasad V. Alluri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective metal oxide removal
- Publication number 20030022432
- Publication date Jan 30, 2003
- Christopher C. Hobbs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for forming a semiconductor device utilizing a...
- Publication number 20020048910
- Publication date Apr 25, 2002
- William J. Taylor, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

Christopher C. Hobbs

Person

Patents Grantslast 30 patents

Selective metal oxide removal performed in a reaction chamber in th...

Method for forming a dual gate oxide device using a metal oxide and...

Transistor with layered high-K gate dielectric and method therefor

Method of recrystallizing an amorphous region of a semiconductor

Transistor having a high K dielectric and short gate length and met...

Method for making semiconductor device

Selective removal of a metal oxide dielectric

Selective removal of a metal oxide dielectric

Metallic oxide gate electrode stack having a metallic gate dielectr...

Process for forming a high-K gate dielectric

Method for forming a semiconductor device

CMOS semiconductor devices and method of formation

Tantalum oxide anti-reflective coating (ARC) integrated with a meta...

Method for forming an MOS transistor having a metallic gate electro...

Patents Applicationslast 30 patents

Method for forming a dual gate oxide device using a metal oxide and...

Gate dielectric and method therefor

Amorphous metal oxide gate dielectric structure and method thereof

Selective metal oxide removal

Method and apparatus for forming a semiconductor device utilizing a...