Christopher Catano

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Albany, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for gate stack formation and etching
- Patent number 12,009,430
- Issue date Jun 11, 2024
- Tokyo Electron Limited
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching techniques
- Patent number 11,837,467
- Issue date Dec 5, 2023
- Toyko Electron Limited
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching techniques
- Patent number 11,424,120
- Issue date Aug 23, 2022
- Tokyo Electron Limited
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selective etching at an interface between materials
- Patent number 11,133,194
- Issue date Sep 28, 2021
- Tokyo Electron Limited
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to protect nitride layers during formation of silicon germa...
- Patent number 10,903,077
- Issue date Jan 26, 2021
- Tokyo Electron Limited
- Yusuke Yoshida
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR ION-ASSISTED SELF-LIMITED CONFORMAL ETCH
- Publication number 20240379372
- Publication date Nov 14, 2024
- TOKYO ELECTRON LIMITED
- Adam Pranda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Etching Techniques
- Publication number 20220351970
- Publication date Nov 3, 2022
- TOKYO ELECTRON LIMITED
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING TECHNIQUES
- Publication number 20220238309
- Publication date Jul 28, 2022
- TOKYO ELECTRON LIMITED
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GATE STACK FORMATION AND ETCHING
- Publication number 20200273992
- Publication date Aug 27, 2020
- TOKYO ELECTRON LIMITED
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Selective Etching at an Interface Between Materials
- Publication number 20200266070
- Publication date Aug 20, 2020
- TOKYO ELECTRON LIMITED
- Sergey Voronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO PROTECT NITRIDE LAYERS DURING FORMATION OF SILICON GERMA...
- Publication number 20200027736
- Publication date Jan 23, 2020
- TOKYO ELECTRON LIMITED
- Yusuke Yoshida
- H01 - BASIC ELECTRIC ELEMENTS