Christopher COLE

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Averill Park, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Method for dry etching silicon carbide films for resist underlayer...
- Patent number 11,658,038
- Issue date May 23, 2023
- Tokyo Electron Limited
- Angelique Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing reactive ion etch lag in low K dielectric etching
- Patent number 10,854,453
- Issue date Dec 1, 2020
- Tokyo Electron Limited
- Angelique D. Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch process for reducing silicon recess
- Patent number 8,268,184
- Issue date Sep 18, 2012
- Tokyo Electron Limited
- Akiteru Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning an ARC layer using SF6 and a hydrocarbon gas
- Patent number 8,236,700
- Issue date Aug 7, 2012
- Tokyo Electron Limited
- Christopher Cole
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching silicon-containing ARC layer with reduced CD bias
- Patent number 7,888,267
- Issue date Feb 15, 2011
- Tokyo Electron Limited
- Akiteru Ko
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOUBLE HARDMASKS FOR SELF-ALIGNED MULTI-PATTERNING PROCESSES
- Publication number 20240047210
- Publication date Feb 8, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DRY ETCHING SILICON CARBIDE FILMS FOR RESIST UNDERLAYER...
- Publication number 20210358763
- Publication date Nov 18, 2021
- TOKYO ELECTRON LIMITED
- Angelique Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Reducing Reactive Ion Etch Lag in Low K Dielectric Etching
- Publication number 20180358227
- Publication date Dec 13, 2018
- TOKYO ELECTRON LIMITED
- Angelique D. Raley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch process for reducing silicon recess
- Publication number 20110318936
- Publication date Dec 29, 2011
- TOKYO ELECTRON LIMITED
- Akiteru KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for patterning an ARC layer using SF6 and a hydrocarbon gas
- Publication number 20110039416
- Publication date Feb 17, 2011
- TOKYO ELECTRON LIMITED
- Christopher COLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ETCHING SILICON-CONTAINING ARC LAYER WITH REDUCED CD BIAS
- Publication number 20090194503
- Publication date Aug 6, 2009
- TOKYO ELECTRON LIMITED
- Akiteru Ko
- H01 - BASIC ELECTRIC ELEMENTS