Christopher D. Sheraw

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit products with gate structures positioned above e...
- Patent number 10,566,328
- Issue date Feb 18, 2020
- GLOBALFOUNDRIES Inc.
- Bala Haran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including laterally recessed source/dr...
- Patent number 10,396,078
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including laterally recessed source/dr...
- Patent number 10,020,307
- Issue date Jul 10, 2018
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of modulating the morphology of epitaxial semiconductor mat...
- Patent number 9,953,873
- Issue date Apr 24, 2018
- GLOBALFOUNDRIES Inc.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal buffer layer in source and drain regions of fin-type tran...
- Patent number 9,634,084
- Issue date Apr 25, 2017
- GLOBALFOUNDRIES Inc.
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 9,287,399
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 8,940,595
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling structure height
- Patent number 8,557,649
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filling narrow openings using ion beam etch
- Patent number 8,497,212
- Issue date Jul 30, 2013
- GLOBALFOUNDRIES Inc.
- Katherina E. Babich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing stacking faults through annealing
- Patent number 7,956,417
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,911,024
- Issue date Mar 22, 2011
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacking fault reduction in epitaxially grown silicon
- Patent number 7,893,493
- Issue date Feb 22, 2011
- International Business Machines Corproation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for non-selective shallow trench isolation reactive ion etch...
- Patent number 7,871,893
- Issue date Jan 18, 2011
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoder for a stationary switch machine
- Patent number 7,820,501
- Issue date Oct 26, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,763,518
- Issue date Jul 27, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor with a majority carrier accumulation la...
- Patent number 7,691,716
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacking fault reduction in epitaxially grown silicon
- Patent number 7,674,720
- Issue date Mar 9, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper contact via structure using hybrid barrier layer
- Patent number 7,498,256
- Issue date Mar 3, 2009
- International Business Machines Corporation
- Randolph F. Knarr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including multiple crystallographic orient...
- Patent number 7,494,918
- Issue date Feb 24, 2009
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS circuits including a passive element having a low end resistance
- Patent number 7,491,598
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a vertical bipolar transistor with a majority...
- Patent number 7,485,537
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Patent number 7,375,410
- Issue date May 20, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS circuits including a passive element having a low end resistance
- Patent number 7,361,959
- Issue date Apr 22, 2008
- International Business Machines Corporation
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for improved diode ideality
- Patent number 7,227,204
- Issue date Jun 5, 2007
- International Business Machines Corporation
- Edward P. Maciejewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistor with a majority carrier accumulation la...
- Patent number 7,115,965
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ADDITIONAL SPACER FOR SELF-ALIGNED CONTACT FOR ONLY HIGH VOLTAGE FI...
- Publication number 20200321332
- Publication date Oct 8, 2020
- GLOBALFOUNDRIES Inc.
- Abu Naser M. Zainuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE STRUCTURES ABOVE ELEVATED ISOLATION STRUCTURES
- Publication number 20190267371
- Publication date Aug 29, 2019
- GLOBALFOUNDRIES INC.
- Bala Haran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING LATERALLY RECESSED SOURCE/DR...
- Publication number 20180286863
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATION OF THE MORPHOLOGY OF EPITAXIAL SEMICONDUCTOR MATERIAL
- Publication number 20170345719
- Publication date Nov 30, 2017
- GLOBALFOUNDRIES INC.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20150084096
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20140264558
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING STRUCTURE HEIGHT
- Publication number 20130102125
- Publication date Apr 25, 2013
- International Business Machines Corporation
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Filling Narrow Openings Using Ion Beam Etch
- Publication number 20120217590
- Publication date Aug 30, 2012
- GLOBALFOUNDRIES INC.
- Katherina E. Babich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING
- Publication number 20100283089
- Publication date Nov 11, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20100207683
- Publication date Aug 19, 2010
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR NON-SELECTIVE SHALLOW TRENCH ISOLATION REACTIVE ION ETCH...
- Publication number 20090189242
- Publication date Jul 30, 2009
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRESS LINER STRUCTURE HAVING SUBSTANTIALLY PLANAR INTERFACE B...
- Publication number 20090090974
- Publication date Apr 9, 2009
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON
- Publication number 20080268609
- Publication date Oct 30, 2008
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BIPOLAR TRANSISTOR WITH A MAJORITY CARRIER ACCUMULATION LA...
- Publication number 20080261371
- Publication date Oct 23, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20080230869
- Publication date Sep 25, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...
- Publication number 20080132025
- Publication date Jun 5, 2008
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS CIRCUITS INCLUDING A PASSIVE ELEMENT HAVING A LOW END RESISTANCE
- Publication number 20080096342
- Publication date Apr 24, 2008
- International Business Machines Corporation
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING
- Publication number 20080087961
- Publication date Apr 17, 2008
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MULTIPLE CRYSTALLOGRAPHIC ORIENT...
- Publication number 20080083952
- Publication date Apr 10, 2008
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COPPER CONTACT VIA STRUCTURE USING HYBRID BARRIER LAYER
- Publication number 20080042291
- Publication date Feb 21, 2008
- Randolph F. Knarr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON
- Publication number 20080006876
- Publication date Jan 10, 2008
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS CIRCUITS INCORPORATING PASSIVE ELEMENTS OF LOW CONTACT RESISTA...
- Publication number 20070120195
- Publication date May 31, 2007
- International Business Machines Corporation
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical bipolar transistor with a majority carrier accumulation la...
- Publication number 20060263993
- Publication date Nov 23, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR IMPROVED DIODE IDEALITY
- Publication number 20060180868
- Publication date Aug 17, 2006
- International Business Machines Corporation
- Edward P. Maciejewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical bipolar transistor with a majority carrier accumulation la...
- Publication number 20060043530
- Publication date Mar 2, 2006
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-thin SOI vertical bipolar transistors with an inversion colle...
- Publication number 20050184360
- Publication date Aug 25, 2005
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS

Christopher D. Sheraw

Person

Patents Grantslast 30 patents

Integrated circuit products with gate structures positioned above e...

Integrated circuit structure including laterally recessed source/dr...

Integrated circuit structure including laterally recessed source/dr...

Methods of modulating the morphology of epitaxial semiconductor mat...

Conformal buffer layer in source and drain regions of fin-type tran...

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Method for controlling structure height

Filling narrow openings using ion beam etch

Method of reducing stacking faults through annealing

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

Stacking fault reduction in epitaxially grown silicon

Method for non-selective shallow trench isolation reactive ion etch...

Decoder for a stationary switch machine

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

Vertical bipolar transistor with a majority carrier accumulation la...

Stacking fault reduction in epitaxially grown silicon

Copper contact via structure using hybrid barrier layer

Semiconductor structures including multiple crystallographic orient...

CMOS circuits including a passive element having a low end resistance

Method of fabricating a vertical bipolar transistor with a majority...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...

CMOS circuits including a passive element having a low end resistance

Structure for improved diode ideality

Vertical bipolar transistor with a majority carrier accumulation la...

Patents Applicationslast 30 patents

ADDITIONAL SPACER FOR SELF-ALIGNED CONTACT FOR ONLY HIGH VOLTAGE FI...

METHODS OF FORMING GATE STRUCTURES ABOVE ELEVATED ISOLATION STRUCTURES

INTEGRATED CIRCUIT STRUCTURE INCLUDING LATERALLY RECESSED SOURCE/DR...

MODULATION OF THE MORPHOLOGY OF EPITAXIAL SEMICONDUCTOR MATERIAL

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

METHOD FOR CONTROLLING STRUCTURE HEIGHT

Filling Narrow Openings Using Ion Beam Etch

METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

METHOD FOR NON-SELECTIVE SHALLOW TRENCH ISOLATION REACTIVE ION ETCH...

DUAL STRESS LINER STRUCTURE HAVING SUBSTANTIALLY PLANAR INTERFACE B...

STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON

VERTICAL BIPOLAR TRANSISTOR WITH A MAJORITY CARRIER ACCUMULATION LA...

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

ULTRA-THIN SOI VERTICAL BIPOLAR TRANSISTORS WITH AN INVERSION COLLE...

CMOS CIRCUITS INCLUDING A PASSIVE ELEMENT HAVING A LOW END RESISTANCE

METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING

SEMICONDUCTOR STRUCTURES INCLUDING MULTIPLE CRYSTALLOGRAPHIC ORIENT...

COPPER CONTACT VIA STRUCTURE USING HYBRID BARRIER LAYER

STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON

CMOS CIRCUITS INCORPORATING PASSIVE ELEMENTS OF LOW CONTACT RESISTA...

Vertical bipolar transistor with a majority carrier accumulation la...

STRUCTURE AND METHOD FOR IMPROVED DIODE IDEALITY

Vertical bipolar transistor with a majority carrier accumulation la...

Ultra-thin SOI vertical bipolar transistors with an inversion colle...