Christopher Harris

Person

Sollentuna, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Grid-UMOSFET with electric field shielding of gate oxide
- Patent number 8,946,726
- Issue date Feb 3, 2015
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Matching network for transmission circuitry
- Patent number 8,855,584
- Issue date Oct 7, 2014
- Cree, Inc.
- Christopher Harris
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Matching network for transmission circuitry
- Patent number 8,818,303
- Issue date Aug 26, 2014
- Cree, Inc.
- Christopher Harris
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Varactor diode with doped voltage blocking layer
- Patent number 8,796,809
- Issue date Aug 5, 2014
- Cree, Inc.
- Christopher Harris
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Silicon carbide dimpled substrate
- Patent number 8,664,664
- Issue date Mar 4, 2014
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Matching network for transmission circuitry
- Patent number 8,611,834
- Issue date Dec 17, 2013
- Cree, Inc.
- Christopher Harris
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Grid-UMOSFET with electric field shielding of gate oxide
- Patent number 8,421,148
- Issue date Apr 16, 2013
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short gate high power MOSFET and method of manufacture
- Patent number 8,084,813
- Issue date Dec 27, 2011
- Cree, Inc.
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide self-aligned epitaxial MOSF...
- Patent number 7,994,017
- Issue date Aug 9, 2011
- Cree, Inc.
- Christopher Harris
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device
- Patent number 7,863,656
- Issue date Jan 4, 2011
- Cree Sweden AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral field effect transistor and its fabrication comprising a sp...
- Patent number 7,834,396
- Issue date Nov 16, 2010
- Cree Sweden AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a junction having a plurality of rings
- Patent number 7,768,092
- Issue date Aug 3, 2010
- Cree Sweden AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polytype hetero-interface high electron mobility device and method...
- Patent number 7,745,851
- Issue date Jun 29, 2010
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device of field effect transistor including a base short...
- Patent number 7,646,060
- Issue date Jan 12, 2010
- Cree Sweden AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide self-aligned epitaxial MOSFET for high powered devi...
- Patent number 7,629,616
- Issue date Dec 8, 2009
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an adaptive AIGaN buffer layer
- Patent number 7,485,512
- Issue date Feb 3, 2009
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing gallium nitride based high-electron mobilit...
- Patent number 7,364,988
- Issue date Apr 29, 2008
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical junction field effect transistor having an epitaxial gate
- Patent number 7,355,223
- Issue date Apr 8, 2008
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride based high-electron mobility devices
- Patent number 7,326,971
- Issue date Feb 5, 2008
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical junction field effect transistor...
- Patent number 7,279,368
- Issue date Oct 9, 2007
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective layer for a semiconductor device
- Patent number 6,670,705
- Issue date Dec 30, 2003
- Acreo AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device of SiC
- Patent number 6,306,773
- Issue date Oct 23, 2001
- Christian Adås
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Field effect transistor of SiC for high temperature application, us...
- Patent number 6,278,133
- Issue date Aug 21, 2001
- Acreo AB
- Christopher Harris
- G01 - MEASURING TESTING
Information Patent Grant
High power impatt diode
- Patent number 6,252,250
- Issue date Jun 26, 2001
- Acreo AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high channel mobility and a high breakd...
- Patent number 6,150,671
- Issue date Nov 21, 2000
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral field effect transistor of SiC, a method for production the...
- Patent number 6,127,695
- Issue date Oct 3, 2000
- Acreo AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode of SiC and a method for production thereof
- Patent number 6,104,043
- Issue date Aug 15, 2000
- ABB Research Ltd.
- Willy Hermansson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for introduction of an impurity dopant in SiC, a semiconduct...
- Patent number 6,096,627
- Issue date Aug 1, 2000
- ABB Research Ltd.
- Christopher Harris
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device of SiC having an insulated gate and buried gri...
- Patent number 6,091,108
- Issue date Jul 18, 2000
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device of SiC with insulating layer and a refractory...
- Patent number 6,025,608
- Issue date Feb 15, 2000
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MATCHING NETWORK FOR TRANSMISSION CIRCUITRY
- Publication number 20140065991
- Publication date Mar 6, 2014
- Cree, Inc.
- Christopher Harris
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE
- Publication number 20130270577
- Publication date Oct 17, 2013
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATCHING NETWORK FOR TRANSMISSION CIRCUITRY
- Publication number 20120105147
- Publication date May 3, 2012
- Cree, Inc.
- Christopher Harris
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
VARACTOR DIODE WITH DOPED VOLTAGE BLOCKING LAYER
- Publication number 20100059850
- Publication date Mar 11, 2010
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSF...
- Publication number 20100041195
- Publication date Feb 18, 2010
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE WITH SUBMICRON CHANNELS
- Publication number 20090224354
- Publication date Sep 10, 2009
- Cree, Inc.
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20090206347
- Publication date Aug 20, 2009
- CREE SWEDEN AB
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE
- Publication number 20090140326
- Publication date Jun 4, 2009
- Cree, Inc.
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE
- Publication number 20090072241
- Publication date Mar 19, 2009
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide self-aligned epitaxial MOSFET and method of manufac...
- Publication number 20080203398
- Publication date Aug 28, 2008
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Field Effect Transistor and Its Fabrication Comprising a Sp...
- Publication number 20070262321
- Publication date Nov 15, 2007
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polytype hetero-interface high electron mobility device and method...
- Publication number 20070243674
- Publication date Oct 18, 2007
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide dimpled substrate
- Publication number 20070200116
- Publication date Aug 30, 2007
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and a method for production thereof
- Publication number 20070018171
- Publication date Jan 25, 2007
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing an adaptive AlGaN buffer layer
- Publication number 20060281238
- Publication date Dec 14, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride based high-electron mobility devices
- Publication number 20060278892
- Publication date Dec 14, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing gallium nitride based high-electron mobilit...
- Publication number 20060281284
- Publication date Dec 14, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and device
- Publication number 20060252212
- Publication date Nov 9, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical junction field effect transistor having an epitaxial gate
- Publication number 20060220072
- Publication date Oct 5, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a vertical junction field effect transistor...
- Publication number 20060199312
- Publication date Sep 7, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction termination for SiC schottky diode
- Publication number 20020017647
- Publication date Feb 14, 2002
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS

Christopher Harris

Person

Patents Grantslast 30 patents

Grid-UMOSFET with electric field shielding of gate oxide

Matching network for transmission circuitry

Matching network for transmission circuitry

Varactor diode with doped voltage blocking layer

Silicon carbide dimpled substrate

Matching network for transmission circuitry

Grid-UMOSFET with electric field shielding of gate oxide

Short gate high power MOSFET and method of manufacture

Method of manufacturing silicon carbide self-aligned epitaxial MOSF...

Semiconductor device

Lateral field effect transistor and its fabrication comprising a sp...

Semiconductor device comprising a junction having a plurality of rings

Polytype hetero-interface high electron mobility device and method...

Method and device of field effect transistor including a base short...

Silicon carbide self-aligned epitaxial MOSFET for high powered devi...

Method of manufacturing an adaptive AIGaN buffer layer

Method of manufacturing gallium nitride based high-electron mobilit...

Vertical junction field effect transistor having an epitaxial gate

Gallium nitride based high-electron mobility devices

Method of manufacturing a vertical junction field effect transistor...

Protective layer for a semiconductor device

Method of producing a semiconductor device of SiC

Field effect transistor of SiC for high temperature application, us...

High power impatt diode

Semiconductor device having high channel mobility and a high breakd...

Lateral field effect transistor of SiC, a method for production the...

Schottky diode of SiC and a method for production thereof

Method for introduction of an impurity dopant in SiC, a semiconduct...

Semiconductor device of SiC having an insulated gate and buried gri...

Semiconductor device of SiC with insulating layer and a refractory...

Patents Applicationslast 30 patents

MATCHING NETWORK FOR TRANSMISSION CIRCUITRY

GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE

MATCHING NETWORK FOR TRANSMISSION CIRCUITRY

VARACTOR DIODE WITH DOPED VOLTAGE BLOCKING LAYER

METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSF...

JUNCTION BARRIER SCHOTTKY DIODE WITH SUBMICRON CHANNELS

Semiconductor Device

SHORT GATE HIGH POWER MOSFET AND METHOD OF MANUFACTURE

GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE

Silicon carbide self-aligned epitaxial MOSFET and method of manufac...

Lateral Field Effect Transistor and Its Fabrication Comprising a Sp...

Polytype hetero-interface high electron mobility device and method...

Silicon carbide dimpled substrate

Semiconductor device and a method for production thereof

Method of manufacturing an adaptive AlGaN buffer layer

Gallium nitride based high-electron mobility devices

Method of manufacturing gallium nitride based high-electron mobilit...

Method and device

Vertical junction field effect transistor having an epitaxial gate

Method of manufacturing a vertical junction field effect transistor...

Junction termination for SiC schottky diode